Patents by Inventor Masahiro Takahashi

Masahiro Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11111433
    Abstract: Provided are a transparent fluorescent sialon ceramic having fluorescence and optical transparency; and a method of producing the same. Such a transparent fluorescent sialon ceramic includes a sialon phosphor which contains a matrix formed of a silicon nitride compound represented by the formula Mx(Si,Al)y(N,O)z (here, M represents at least one selected from the group consisting of Li, alkaline earth metals, and rare earth metals, 0?x/z<3, and 0<y/z<1) and a luminescent center element.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: September 7, 2021
    Assignees: NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY, KANAGAWA INSTITUTE OF INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Takuma Takahashi, Junichi Tatami, Yuki Sano, Takehiko Tanaka, Masahiro Yokouchi
  • Publication number: 20210273017
    Abstract: An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region; an organic photoelectric converter including a first electrode, a second electrode, a charge accumulation layer, and an organic photoelectric conversion layer, the first electrode being provided on a light receiving surface of the semiconductor substrate and including a plurality of electrodes, the second electrode being opposed to the first electrode, the charge accumulation layer and the organic photoelectric conversion layer being stacked in this order between the first electrode and the second electrode and extending over the effective pixel region; and a first hydrogen-blocking layer that covers above the organic photoelectric conversion layer, a side surface of the organic photoelectric conversion layer, and a side surface of the charge accumulation layer.
    Type: Application
    Filed: July 19, 2019
    Publication date: September 2, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kenichi MURATA, Masahiro JOEI, Shingo TAKAHASHI
  • Publication number: 20210270378
    Abstract: A capacity control valve includes a valve housing formed with a discharge port, a suction port, and first and second control ports, a rod arranged in the valve housing and driven by a solenoid, a CS valve 50 configured to control a fluid flow between the first control port and the suction port in accordance with a movement of the rod, and a DC valve configured to control a fluid flow between the second control port and the discharge port in accordance with the movement of the rod. In a non-energization state of the solenoid, the CS valve is closed and the DC valve is opened. As the energization of the solenoid becomes larger, the CS valve transitions from a closed state to an open state, and the DC valve is throttled from an open state and thereafter transitions to the open state.
    Type: Application
    Filed: August 7, 2019
    Publication date: September 2, 2021
    Inventors: Masahiro HAYAMA, Kohei FUKUDOME, Takahiro EJIMA, Daichi KURIHARA, Wataru TAKAHASHI, Keigo SHIRAFUJI
  • Publication number: 20210272949
    Abstract: A display panel includes a substrate, a gate metal layer formed on a substrate, an insulating layer that covers the gate metal layer, and a source metal layer formed on the insulating layer. In a driving circuit region, the gate metal layer includes a first electrode and a second electrode separated from each other in a first direction and close to each other. The first electrode is positioned nearer than the second electrode to an active region and has a first side on a side facing the second electrode. The second electrode includes an ESD sacrificial portion. The ESD sacrificial portion includes a first part extending in the first direction and a second part facing the first side and extending in a second direction intersecting the first direction, the second part not overlapping a source metal of the source metal layer.
    Type: Application
    Filed: February 25, 2021
    Publication date: September 2, 2021
    Inventors: HIDETOSHI NAKAGAWA, YOSHIHISA TAKAHASHI, MASAHIRO MATSUDA
  • Patent number: 11094927
    Abstract: Provided is a positive electrode active material which suppresses a reduction in capacity due to charge and discharge cycles when used in a lithium ion secondary battery. A covering layer is formed by segregation on a superficial portion of the positive electrode active material. The positive electrode active material includes a first region and a second region. The first region exists in an inner portion of the positive electrode active material. The second region exists in a superficial portion of the positive electrode active material and part of the inner portion thereof. The first region includes lithium, a transition metal, and oxygen. The second region includes magnesium, fluorine, and oxygen.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: August 17, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Teruaki Ochiai, Yohei Momma, Ayae Tsuruta, Masahiro Takahashi, Mayumi Mikami
  • Publication number: 20210249538
    Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1??O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
    Type: Application
    Filed: April 28, 2021
    Publication date: August 12, 2021
    Inventors: Masahiro TAKAHASHI, Kengo AKIMOTO, Shunpei YAMAZAKI
  • Patent number: 11072364
    Abstract: One object is to provide a steering device that facilitates disengagement of a speed reducer so that, for example, when the speed reducer fails, the speed reducer can be disengaged to enable steering of a vehicle with a manual operational force alone. This application relates to a steering device provided with a steering mechanism and a speed reducer. The steering mechanism steers tires of a vehicle under a steering force from a steering wheel. The speed reducer is connected to a motor for outputting a steering assistance force corresponding to the steering force. The speed reducer enlarges the steering assistance force and transmits the enlarged steering assistance force to the steering mechanism. The speed reducer is connected to the steering mechanism via a speed reducer arm.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: July 27, 2021
    Assignee: NABTESCO CORPORATION
    Inventors: Koji Nakamura, Masahiro Takahashi, Yuto Nakai
  • Publication number: 20210225887
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.
    Type: Application
    Filed: January 8, 2021
    Publication date: July 22, 2021
    Inventors: Masahiro TAKAHASHI, Takuya HIROHASHI, Masashi TSUBUKU, Noritaka ISHIHARA, Masashi OOTA
  • Publication number: 20210201953
    Abstract: To realize a natural image effect and the like in a moving image. Therefore, an image processing unit includes an additional image generation unit configured to generate an additional image to be added to moving image data, and an image editing processing unit configured to perform image editing processing of adding the additional image to the moving image data, using depth information of a pixel in the moving image data to which the additional image is to be added.
    Type: Application
    Filed: April 15, 2019
    Publication date: July 1, 2021
    Inventors: MASAHIRO TAKAHASHI, TAKAHIRO TSUGE, SATOSHI ASAI, YO NONOYAMA
  • Patent number: 11043660
    Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: June 22, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Teruaki Ochiai, Takahiro Kawakami, Mayumi Mikami, Yohei Momma, Masahiro Takahashi, Ayae Tsuruta
  • Publication number: 20210184041
    Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.
    Type: Application
    Filed: February 2, 2021
    Publication date: June 17, 2021
    Inventors: Shunpei YAMAZAKI, Masahiro TAKAHASHI, Tatsuya HONDA, Takehisa HATANO
  • Patent number: 11038135
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: June 15, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Publication number: 20210155109
    Abstract: The solar charging system according to the present embodiment includes a solar panel, a drive battery, an auxiliary system including one or more devices, and a controller that controls where to supply power generated by the solar panel. The controller determines whether the solar panel can generate power, and, upon determining that the solar panel can generate power, supplies the power from the solar panel to the auxiliary system to derive the power generated by the solar panel. Upon detecting a fact that the power generated by the solar panel is equal to or greater than a first power, the controller further supplies the power from the solar panel to the drive battery to charge the drive battery.
    Type: Application
    Filed: October 8, 2020
    Publication date: May 27, 2021
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuma MIYAMOTO, Satoshi SHIZUKA, Akinori KAWAMURA, Takashi FUKAI, Masahiro TAKAHASHI
  • Publication number: 20210159345
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: February 4, 2021
    Publication date: May 27, 2021
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Publication number: 20210146486
    Abstract: A silver brazing material containing silver, copper, zinc, manganese, nickel, and tin as indispensable constituent elements. The silver brazing material includes 35 mass % or more and 45 mass % or less silver, 18 mass % or more and 28 mass % or less zinc, 2 mass % or more and 6 mass % or less manganese, 1.5 mass % or more and 6 mass % or less nickel, and 0.5 mass % or more and 5 mass % or less tin, with the balance being copper impurities. Within these compositional ranges, a predetermined relation is set between the manganese content and the nickel content, whereby the silver brazing material can be provided with excellent characteristics also in terms of processability or wettability. In the silver brazing material of the present invention, the silver content is reduced, and also melting point reduction and the narrowing of the temperature difference between solidus temperature and liquidus temperature are attempted.
    Type: Application
    Filed: October 24, 2018
    Publication date: May 20, 2021
    Applicants: TANAKA KIKINZOKU KOGYO K.K., TOKYO BRAZE CO., LTD.
    Inventors: Takaomi KISHIMOTO, Masahiro TAKAHASHI, Takashi TERUI, Kotaro MATSU
  • Patent number: 10998449
    Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1-?O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: May 4, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Kengo Akimoto, Shunpei Yamazaki
  • Patent number: 10991829
    Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: April 27, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Takahashi, Tatsuya Honda, Takehisa Hatano
  • Patent number: 10968131
    Abstract: Provided is a method for manufacturing a glass container with which a glass container having a distinctively shaped inner space and excellent aesthetic appearance can be manufactured in good yield. The method for manufacturing a glass container includes steps (A) to (E). (A) A step of introducing a gob into a mold through a funnel. (B) A step of blowing air into the mold through the funnel, bringing a plunger disposed on a side opposite the side to which the funnel is fitted in contact with the gob, separating the plunger from the gob, and forming a recess on the surface of the gob. (C) A step of removing the funnel from the mold and fitting a baffle to the mold. (D) A step of blowing air from the plunger, and forming an inner space inside the gob with the recess as a starting point while simultaneously forming an outer shape by pressing the outer side of the gob to a molding surface of the mold to obtain a glass container of the final shape.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: April 6, 2021
    Assignee: KOA GLASS CO., LTD.
    Inventors: Masahiro Takahashi, Shotaro Takahashi, Naomasa Saito
  • Patent number: 10955655
    Abstract: There are provided an information processing apparatus, an information processing method, a program, and a microscope system which can compose a microscopically observed image having a wide field of view and a high resolution by highly accurately stitching a plurality of digital images together. An image acquisition unit provided in the information processing apparatus acquires a first partial image and a second partial image each formed by imaging a part of an observation target area, and a stitching position adjustment unit adjusts a stitching position of the second partial image with respect to the first partial image. The image acquisition unit controls drive of the microscope such that a partial image including a specimen is acquired as the second partial image when the first partial image includes a foreign matter.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: March 23, 2021
    Assignee: Sony Corporation
    Inventor: Masahiro Takahashi
  • Publication number: 20210083281
    Abstract: A positive electrode active material having high capacity and excellent cycle performance is provided. The positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charge and discharge as compared with those of a known positive electrode active material.
    Type: Application
    Filed: May 11, 2018
    Publication date: March 18, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Mayumi MIKAMI, Aya UCHIDA, Yumiko YONEDA, Yohei MOMMA, Masahiro TAKAHASHI, Teruaki OCHIAI