Patents by Inventor Masahiro Takahata

Masahiro Takahata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10497967
    Abstract: A negative-electrode active material comprises a graphite including boron and nitrogen. A ratio R1 satisfies 0.5?R1?1, where R1=SBN/SB, and SB denotes a total peak area of a boron 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SBN denotes a peak area of a spectrum assigned to boron bonded to nitrogen in the boron 1s spectrum. A ratio R2 satisfies 0<R2?0.05, where R2=SB/(SB+SC+SN), and SC denotes a peak area of a carbon 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SN denotes a peak area of a nitrogen 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: December 3, 2019
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tetsuyuki Okano, Takayuki Nakatsutsumi, Mayumi Maenishi, Masahiro Takahata, Junko Matsushita, Akira Kano, Nobuhiko Hojo
  • Patent number: 10138533
    Abstract: A high-purity calcium and method of producing same are provided. The method includes performing first sublimation purification by introducing calcium starting material having a purity, excluding gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit or evaporate onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C., and causing the product to similarly deposit or evaporate on the inside walls of the sublimation vessel thereby recovering calcium having a purity of 4N5 or higher.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: November 27, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Masahiro Takahata
  • Publication number: 20180337423
    Abstract: A negative-electrode active material comprises a graphite including boron and nitrogen. A ratio R1 satisfies 0.5?R1?1, where R1=SBN/SB, and SB denotes a total peak area of a boron 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SBN denotes a peak area of a spectrum assigned to boron bonded to nitrogen in the boron 1s spectrum. A ratio R2 satisfies 0<R2?0.05, where R2=SB/(SB+SC+SN), and SC denotes a peak area of a carbon 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy, and SN denotes a peak area of a nitrogen 1s spectrum of the graphite obtained by X-ray photoelectron spectroscopy.
    Type: Application
    Filed: April 23, 2018
    Publication date: November 22, 2018
    Inventors: TETSUYUKI OKANO, TAKAYUKI NAKATSUTSUMI, MAYUMI MAENISHI, MASAHIRO TAKAHATA, JUNKO MATSUSHITA, AKIRA KANO, NOBUHIKO HOJO
  • Publication number: 20180337399
    Abstract: A negative electrode active material for a nonaqueous secondary battery includes graphite containing boron. The graphite has an average discharge potential of 0.16 V or more and 0.2 V or less, based on Li. A nonaqueous secondary battery includes: a positive electrode including a positive electrode active material capable of occluding and releasing an alkali metal ion; a negative electrode including a negative electrode active material above; and a nonaqueous electrolyte solution.
    Type: Application
    Filed: May 8, 2018
    Publication date: November 22, 2018
    Inventors: NOBUHIKO HOJO, TAKAYUKI NAKATSUTSUMI, TETSUYUKI OKANO, MAYUMI MAENISHI, MASAHIRO TAKAHATA
  • Patent number: 10041155
    Abstract: Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium.
    Type: Grant
    Filed: September 15, 2011
    Date of Patent: August 7, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Masahiro Takahata
  • Publication number: 20180087136
    Abstract: A method of purifying erbium is provided to produce a high-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components, and containing Al, Fe, Cu, and Ta each in an amount of 1 wtppm or less, W in an amount of 10 wtppm or less, carbon in an amount of 150 wtppm or less, alkali metals and alkali earth metals each in an amount of 1 wtppm or less, other transition metal elements in a total amount of 10 wtppm or less, and U and Th as radioactive elements each in an amount of 10 wtppb or less. Erbium has a high vapor pressure and is difficult to refine in a molten state. The method provides technology for efficiently and stably providing high-purity erbium, a sputtering target made of high-purity erbium, and a metal gate film having high-purity erbium as a main component thereof.
    Type: Application
    Filed: November 28, 2017
    Publication date: March 29, 2018
    Inventor: Masahiro Takahata
  • Publication number: 20170029921
    Abstract: A high-purity calcium and method of producing same are provided. The method includes performing first sublimation purification by introducing calcium starting material having a purity, excluding gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit or evaporate onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C., and causing the product to similarly deposit or evaporate on the inside walls of the sublimation vessel thereby recovering calcium having a purity of 4N5 or higher.
    Type: Application
    Filed: October 14, 2016
    Publication date: February 2, 2017
    Inventor: Masahiro Takahata
  • Patent number: 9499877
    Abstract: The present invention provides a method for producing high-purity calcium, the method being characterized by the following: performing first sublimation purification by introducing calcium starting material having a purity, excluding the gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit (evaporate) onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: November 22, 2016
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventor: Masahiro Takahata
  • Patent number: 9368288
    Abstract: A photoelectric conversion element includes a photoanode that includes a solid semiconductor layer containing a dye molecule, a counter electrode, and an electrolyte medium disposed between the photoanode and the counter electrode. The dye molecule includes XD represented by chemical formula (1) and YA represented by chemical formula (2) in a molecule: R(XD/YA), which is a ratio of the number of XD to the number of YA in the dye molecule, is 2 or more.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: June 14, 2016
    Assignee: Panasonic Corporation
    Inventors: Takashi Sekiguchi, Masahiro Takahata, Michio Suzuka, Naoki Hayashi
  • Patent number: 9234257
    Abstract: A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: January 12, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Masahiro Takahata, Takeshi Gohara
  • Publication number: 20150340164
    Abstract: A photoelectric converter according to an aspect of the present disclosure comprises a photoanode including a semiconductor layer and a dye molecule located on the semiconductor layer, the dye molecule having a HOMO level nobler than +1.0 V measured against a Ag/Ag+ reference electrode; a counter electrode opposing the photoanode; and an electrolytic solution located between the photoanode and the counter electrode, the electrolytic solution containing a radical compound in which a carbon atom of one selected from the group consisting of an alkyl group and an alkylene group each having two or more carbon atoms is chemically bonded to the 4-position of a 2,2,6,6-tetramethylpiperidine 1-oxyl.
    Type: Application
    Filed: May 14, 2015
    Publication date: November 26, 2015
    Inventors: MICHIO SUZUKA, MASAHIRO TAKAHATA, NAOKI HAYASHI
  • Patent number: 9013009
    Abstract: The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-3N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700° C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: April 21, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Masahiro Takahata, Kazuyuki Satoh, Satoyasu Narita, Takeshi Gohara
  • Publication number: 20150101656
    Abstract: A photoelectric conversion element includes a photoanode that includes a solid semiconductor layer containing a dye molecule, a counter electrode, and an electrolyte medium disposed between the photoanode and the counter electrode. The dye molecule includes XD represented by chemical formula (1) and YA represented by chemical formula (2): R(XD/YA), which is a ratio of a number of XD to a number of YA in the dye molecule, is 2 or more.
    Type: Application
    Filed: September 22, 2014
    Publication date: April 16, 2015
    Inventors: TAKASHI SEKIGUCHI, MASAHIRO TAKAHATA, MICHIO SUZUKA, NAOKI HAYASHI
  • Patent number: 8980169
    Abstract: Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: March 17, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Masahiro Takahata, Yuichiro Shindo, Gaku Kanou
  • Publication number: 20140301890
    Abstract: The present invention provides a method for producing high-purity calcium, the method being characterized by the following: performing first sublimation purification by introducing calcium starting material having a purity, excluding the gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit (evaporate) onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C.
    Type: Application
    Filed: November 13, 2012
    Publication date: October 9, 2014
    Inventor: Masahiro Takahata
  • Publication number: 20140199203
    Abstract: A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and ?-ray count number of 0.001 cph/cm2 or less. A method for producing the high-purity lanthanum characterized by obtaining lanthanum crystal by subjecting a crude lanthanum metal raw material having a purity of 4N or less excluding the gas component to molten salt electrolysis at a bath temperature of 450 to 700° C., subjecting the lanthanum crystal to de-salting treatment, and removing volatile substances by performing electron beam melting, wherein the high-purity lanthanum has a purity of 5N or more excluding rare earth elements and gas components, and ?-ray count number of 0.001 cph/cm2 or less. The object of the present invention is providing a technique capable of efficiently and stably providing a high-purity lanthanum with low ?-ray, a sputtering target made from the high-purity lanthanum, and a metal gate thin film having the high-purity lanthanum as the main component.
    Type: Application
    Filed: September 4, 2012
    Publication date: July 17, 2014
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Masahiro Takahata, Kazuyuki Satoh, Takeshi Gohara, Satoyasu Narita
  • Publication number: 20140140884
    Abstract: Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium.
    Type: Application
    Filed: September 15, 2011
    Publication date: May 22, 2014
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Masahiro Takahata
  • Publication number: 20140124366
    Abstract: High-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components, and containing Al, Fe, Cu, and Ta each in an amount of 1 wtppm or less, W in an amount of 10 wtppm or less, carbon in an amount of 150 wtppm or less, alkali metals and alkali earth metals each in an amount of 1 wtppm or less, other transition metal elements in a total amount of 10 wtppm or less, and U and Th as radioactive elements each in an amount of 10 wtppb or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to refine in a molten state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target made of high-purity erbium, and a metal gate film having high-purity erbium as a main component thereof.
    Type: Application
    Filed: September 15, 2011
    Publication date: May 8, 2014
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Masahiro Takahata
  • Publication number: 20130313659
    Abstract: The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700° C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.
    Type: Application
    Filed: January 17, 2012
    Publication date: November 28, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Masahiro Takahata, Kazuyuki Satoh, Satoyasu Narita, Takeshi Gohara
  • Publication number: 20130241010
    Abstract: A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.
    Type: Application
    Filed: November 14, 2011
    Publication date: September 19, 2013
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventors: Masahiro Takahata, Takeshi Gohara