Abstract: A method for manufacturing a semiconductor device having a heat dissipating layer including forming first separation grooves in a front surface of the semiconductor substrate; forming second separation grooves at bottoms of the first separation grooves; forming a linkage metal layer in the second semiconductor grooves; and cutting the linkage metal layer using laser light. According to this method, the top of the linkage metal layer is spaced from the surface of the semiconductor substrate and thus short-circuiting between the linkage metal layer and wires is avoided.

Abstract: A mold clamping apparatus for an injection molding machine comprises a stationary platen fixedly holding the stationary mold, a movable platen fixedly holding the movable mold and disposed opposite to the stationary platen, tie bars for guiding the movable platen for movement toward and away from the stationary platen, a movable platen driving mechanism for moving the movable platen along the tie bars to close and open the mold, a movable platen fixing mechanism for fixing the movable platen to the tie bars at a set position immediately before a position where the movable mold is joined to the stationary mold, and a clamping force applying mechanism that includes a sealed hydraulic cylinder actuator capable of converting energy of a hydraulic fluid into an intensified mold clamping force and of applying the intensified mold clamping force to the stationary platen.

Abstract: A mold clamping apparatus for an injection molding machine includes a stationary platen fixedly holding the stationary mold, a movable platen fixedly holding the movable mold and disposed opposite to the stationary platen, tie bars for guiding the movable platen for movement toward and away from the stationary platen, a movable platen driving mechanism for moving the movable platen along the tie bars to close and open the mold, a movable platen fixing mechanism for fixing the movable platen to the tie bars at a set position immediately before a position where the movable mold is joined to the stationary mold, and a clamping force applying mechanism including sealed hydraulic cylinder actuators capable of converting energy of a hydraulic fluid into an intensified mold clamping force and of applying the intensified mold clamping force to the stationary platens.

Abstract: A method of plating which improves the uniformity of a plated coating thickness without changing the flow velocity of a feed plating solution. An aperture at a center of a mesh anode electrode of a plating apparatus produces an electric field density distribution between the mesh anode electrode and a wafer that is lower in the central portion of the wafer than at the edge portion of the wafer.

Abstract: In a semiconductor device, an opening having a high aspect ratio from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.

Abstract: An injection unit including a heating barrel and an injection screw rotationally and axially movable and placed in the heating barrel is disposed on one side of a clamping mechanism for clamping a mold. The injection screw is driven and controlled for operation through a ball screw by an electric motor. Products, each of a moving speed of the ball screw and an operating current supplied to the electric motor in a unit time, are accumulated to calculate a total energy value indicating the amount of total energy supplied to the ball screw. A life energy value is predetermined on the basis of products, each of force generated by the ball screw and a moving speed of the ball screw. It is decided that a life of the ball screw has terminated when the total energy value A is equal to or greater than the life energy B (A≧B).

Abstract: A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.

Abstract: A mold clamping apparatusm for an injection molding machine comprises a stationary platen fixedly holding the stationary mold, a movable platen fixedly holding the movable mold and disposed opposite to the stationary platen, tie bars for guiding the movable platen for movement toward and away from the stationary platen, a movable platen driving means for moving the movable platen along the tie bars to close and open the mold, a movable platen fixing means for fixing the movable platen to the tie bars at a set position immediately before a position where the movable mold is joined to the stationary mold, and a clamping force applying means comprising sealed hydraulic cylinder actuators capable of converting energy of a hydraulic fluid into an intensified mold clamping force and of applying the intensified mold clamping force to the stationary platens.

Abstract: An injection speed control procedure is applied to controlling an injection screw included in an electric injection molding machine and driven by an electric motor. An injection process is divided into a plurality of injection stages. Injection speed at which the injection screw is moved is changed at a time point when a value PS obtained by integrating injection pressure with respect to the position of the injection screw or a value PT obtained by integrating injection pressure with respect to injection time coincides with a predetermined reference value determined for each injection stage.

Abstract: A mold clamping apparatusm for an injection molding machine comprises a stationary platen fixedly holding the stationary mold, a movable platen fixedly holding the movable mold and disposed opposite to the stationary platen, tie bars for guiding the movable platen for movement toward and away from the stationary platen, a movable platen driving means for moving the movable platen along the tie bars to close and open the mold, a movable platen fixing means for fixing the movable platen to the tie bars at a set position immediately before a position where the movable mold is joined to the stationary mold, and a clamping force applying means comprising sealed hydraulic cylinder actuators capable of converting energy of a hydraulic fluid into an intensified mold clamping force and of applying the intensified mold clamping force to the stationary platens.

Abstract: An injection apparatus for a motor-driven injection molding machine comprised a barrel unit for heating and plasticating polymer material, a screw disposed in the barrel unit rotatably and movably in the axial direction, a first rotating shaft having one end connected to a rear end of the screw, a charging motor for driving the first rotating shaft for rotation, a ball screw mechanism consisting of a second rotating shaft having a threaded rod portion, and a threaded nut member engaging with the threaded rod portion, an injection carriage having a front plate for mounting the barrel unit thereon, and a rear plate for supporting the second rotating shaft at the rear end thereof, an injection motor for driving the ball screw mechanism, and an intermediate mount plate, disposed movably between the front plate and the rear plate, for linking the first rotating shaft to the second rotating shaft coaxially with a predetermined distance spaced apart between the rear end of the first rotating shaft and the front end

Abstract: In the semiconductor device, an opening 3 having a high aspect ratio is made from the back surface of a GaAs substrate 1 by anisotropic dry etching. After an Au film 4 is deposited on the entire back surface of the Gabs substrate inclusive of the inside of the opening 3, the entire back surface is subjected to Ni alloy non-electrolytic plating so that an Ni film 9a can be also deposited on the inner wall and bottom of the opening 3 can be obtained. An IC substrate or FET with the Ni film 9a left only at the area corresponding to a via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each-other by AuSn solder having poor wetting for the Ni film 9a.

Abstract: A mold clamping apparatus for an injection molding machine including a stationary platen fixedly holding the stationary mold, a movable platen fixedly holding the movable mold and disposed opposite to the stationary platen, tie bars for guiding the movable platen for movement toward and away from the stationary platen, a moveable platen driving element for moving the movable platen elements for fixing the movable platen to the tire bars at a set position immediately before a position where the movable mold is joined to the stationary mold, and a clamping force applying element including hydraulic cylinder actuators capable of converting energy of a hydraulic fluid into an intensified mold clamping force and of applying the intensified mold clamping force to the stationary platen.

Abstract: In a semiconductor device, an opening having a high aspect ratio extends from a back surface of a GaAs substrate and is formed by anisotropic dry etching. After an Au film is deposited on the entire back surface of the GaAs substrate, including inside of the opening, a Ni alloy is non-electrolytically plated. The Ni film can also be deposited on the inner wall and the bottom of the opening. An IC substrate or FET may have the Ni film only at an area corresponding to the via hole. The back surface of the IC substrate or FET and the front surface of a package substrate are bonded to each other by AuSn solder poorly wetting the Ni film.

Abstract: A method of producing a semiconductor device having a heat dissipating metal layer wherein the number of patterning steps is reduced, laser dicing produces a better profile, and first and second metal layers are prevented from separating from each other, and a semiconductor device produced by the method. The number of patterning steps is reduced by employing a flat exposure step for photoresist with mask alignment. A better appearance is obtained by forming the metal layers which connect the semiconductor devices with each other from a first metal layer having a lower melting point and a second metal layer having a higher melting point and severing the first metal layer and the second metal layer successively, from the first metal layer side. A second metal layer is prevented from peeling by preventing oxidation of the plated feeder layer through plating of the second metal layer.

Abstract: The present invention provides a plating apparatus and a method of plating, which improve the uniformity of the plate coat thickness without changing the flow velocity of feeding the plating solution.

Abstract: A method of plating which improves the uniformity of a plated coating thickness without changing the flow velocity of a feed plating solution. An aperture at a center of a mesh anode electrode of a plating apparatus produces an electric field density distribution between the mesh anode electrode and a wafer that is lower in the central portion of the wafer than at the edge portion of the wafer.

Abstract: A semiconductor device includes a semiconductor substrate having front and back surfaces and a heat dissipating metal layer on the back surface. The semiconductor substrate includes side surfaces covering a metal layer. The side surfaces are outwardly tapered and include a pair of upper side surfaces and lower side surfaces. A protrusion bearing semiconductor elements extends from the front surface of the substrate in a direction opposite the back surface of the substrate. The side surfaces of the protrusion are not metal covered. Thus, short-circuiting between wires connected to the semiconductor elements and the metal layer covering the side surfaces is avoided.

Abstract: The duty of a current to be supplied to an injection motor is calculated on the basis of the ratio between set injection time for which the injection motor operates and molding cycle time, a shaft torque of the injection motor is calculated on the basis of a set maximum injection force of the injection molding condition, a maximum current for the injection motor is determined on the basis of the calculated shaft torque, and it is decided that the injection motor is overloaded, an alarm is given, a duty for a current that enables continuous molding is retrieved for the maximum current, a state that enables continuous molding is displayed and the molding cycle time determining the duty of the current that enables continuous molding is corrected when the current having the calculated desired duty is smaller than the maximum current.

Abstract: A semiconductor wafer is prepared which includes a semiconductor layer having on its surface a plurality of functional devices, and a separation line region surrounding and separating the plurality of functional devices from one another. A metal layer is formed on the surface of separation line region of semiconductor region. A reinforcing layer is formed on the surface of semiconductor wafer. By selectively etching the back surface of semiconductor layer, a hole is formed to surround the peripheries of functional device, passing through semiconductor layer and reaching from the back surface to metal layer. Reinforcing plate is removed from semiconductor wafer. Metal layer is irradiated with laser and fused to provide a plurality of semiconductor chips separated from one another.