Abstract: A resist underlayer film-forming composition comprising a polymer having at least one repeating unit of Formula (1), (2), (3), or (4) (omitted), and a solvent, the composition exhibiting a high etching resistance, favorable dry etching rate ratio and optical constant, further forming a film exhibiting a good coatability even to an uneven substrate, providing a small difference in film thickness after embedding and having a planarity and superior hardness, thereby enabling finer substrate processing.

Abstract: A resist underlayer film-forming composition that exhibits a high etching resistance, a favorable dry etching rate ratio and optical constant, and can form a film exhibiting a good coatability even to a so-called uneven substrate, providing a small difference in film thickness after embedding, and having planarity and a superior hardness; a resist underlayer film formed from the resist underlayer film-forming composition; and a method of producing a semiconductor device.

Abstract: Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

Abstract: A resist underlayer film having a particularly high dry etching rate; a resist underlayer film-forming composition; a resist pattern forming method; and a semiconductor device production method. The resist underlayer film-forming composition contains a solvent and an epoxy adduct obtained by reacting a compound represented by formula (1) and an epoxy adduct-forming compound. The epoxy adduct-forming compound is one or more compounds selected from the group made of carboxylic acid-containing compounds, carboxylic anhydride-containing compounds, hydroxy group-containing compounds, thiol group-containing compounds, amino group-containing compounds, and imide group-containing compounds.

Abstract: A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Abstract: A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. The film-forming composition including, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) in Formula (1), R1 is organic group of Formula (2) and is bonded to silicon atom through Si—C bond: The film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group made of hydrolyzable silane of Formula (3): R7cSi(R8)4?c??Formula (3) and hydrolyzable silane of Formula (4): R9dSi(R10)3?d2Ye??Formula (4) Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.

Abstract: A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Abstract: A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Abstract: A photosensitive resin composition which enables the achievement of a cured body that is further decreased in dielectric constant and dielectric loss tangent; a method for producing a cured relief pattern with use of this photosensitive resin composition; and a semiconductor device which is provided with this cured relief pattern. A negative photosensitive resin composition which contains 100 parts by mass of (A) a polyimide precursor that has a specific unit structure; and 0.1 to 20 parts by mass of (B) a radical photopolymerization initiator.

Abstract: A novel resist underlayer film forming composition containing a compound has a hydantoin ring. A resist underlayer film forming composition has a compound having at least two substituents of the following formula (1): (wherein R1 and R2 are each independently a hydrogen atom or a methyl group, and X1 is a C1-3 hydroxyalkyl group or a C2-6 alkyl group having one or two ether bonds in a main chain) in the molecule, and a solvent.

Abstract: A resist underlayer film-forming composition including a solvent and a copolymer including a structural unit of the following Formula (1): wherein X is a divalent chain hydrocarbon group having a carbon atom number of 2 to 10, and the divalent chain hydrocarbon group optionally has at least one sulfur atom or oxygen atom in a main chain, or optionally has at least one hydroxy group as a substituent; R is a chain hydrocarbon group having a carbon atom number of 1 to 10; and each n is 0 or 1.

Abstract: There are provided novel glycolurils, and methods for producing the same.

Abstract: There are provided a novel isocyanurate compound having a glycidyl group as a substituent to be bonded to a nitrogen atom. A monoglycidyl isocyanurate compound of the following Formula (1), (2), or (3). (wherein two R1s are each a C2-10 alkyl group, two R2s are each a C1-5 alkylene group, two R3s are each a C1-2 alkyl group, two R4s are each a C1-2 alkylene group, and two R5s are each a C1-2 alkyl group).

Abstract: A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Abstract: There are provided novel glycolurils, and methods for producing the same.

Abstract: A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Abstract: There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex.

Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

Abstract: A novel monothioglycoluril compound and a novel dithioglycoluril compound. A thioglycoluril compound of the following Formula (1): (wherein X is an oxygen atom or a sulfur atom, and four Rs are each a hydrogen atom, a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 4, a phenyl group, a naphthyl group, a benzyl group, or a C3-9 alkyl group having at least one ether bond on the main chain).

Abstract: There are provided a novel isocyanurate compound having a glycidyl group as a substituent to be bonded to a nitrogen atom. A monoglycidyl isocyanurate compound of the following Formula (1), (2), or (3). (wherein two R1s are each a C2-10 alkyl group, two R2s are each a C1-5 alkylene group, two R3s are each a C1-2 alkyl group, two R4s are each a C1-2 alkylene group, and two R5s are each a C1-2 alkyl group.