Patents by Inventor Masakatsu Ohno
Masakatsu Ohno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038777Abstract: To provide a semiconductor device that occupies a small area. The semiconductor device includes a first conductive layer, first to fifth insulating layers, and a second conductive layer that are stacked in this order and further includes a semiconductor layer, a third conductive layer, and a sixth insulating layer. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surfaces of the first to fifth insulating layers, and the second conductive layer. The sixth insulating layer is over the semiconductor layer. The third conductive layer is over the sixth insulating layer and overlaps with the semiconductor layer with the sixth insulating layer between the third conductive layer and the semiconductor layer. The first insulating layer includes a region having a higher hydrogen content than the second insulating layer. The fifth insulating layer includes a region having a higher hydrogen content than the fourth insulating layer.Type: ApplicationFiled: July 20, 2023Publication date: February 1, 2024Inventors: Masakatsu OHNO, Masataka NAKADA, Yukinori SHIMA, Masayoshi DOBASHI, Junichi KOEZUKA, Masami JINTYOU
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Publication number: 20230420571Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.Type: ApplicationFiled: September 13, 2023Publication date: December 28, 2023Inventors: Yukinori SHIMA, Masakatsu OHNO, Takumi SHIGENOBU
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Patent number: 11799034Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.Type: GrantFiled: November 29, 2021Date of Patent: October 24, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukinori Shima, Masakatsu Ohno, Takumi Shigenobu
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Publication number: 20230263018Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: ApplicationFiled: April 25, 2023Publication date: August 17, 2023Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 11693288Abstract: A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with a top surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer.Type: GrantFiled: December 27, 2021Date of Patent: July 4, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masami Jintyou, Daisuke Kurosaki, Masakatsu Ohno, Junichi Koezuka
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Patent number: 11672148Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: GrantFiled: May 4, 2021Date of Patent: June 6, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 11616206Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.Type: GrantFiled: February 17, 2021Date of Patent: March 28, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masakatsu Ohno, Kayo Kumakura, Hiroyuki Watanabe, Seiji Yasumoto, Satoru Idojiri, Hiroki Adachi
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Patent number: 11574937Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.Type: GrantFiled: August 3, 2020Date of Patent: February 7, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masataka Sato, Masakatsu Ohno, Seiji Yasumoto, Hiroki Adachi
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Publication number: 20220128850Abstract: A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with a top surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer.Type: ApplicationFiled: December 27, 2021Publication date: April 28, 2022Inventors: Masami JINTYOU, Daisuke KUROSAKI, Masakatsu OHNO, Junichi KOEZUKA
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Publication number: 20220093802Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.Type: ApplicationFiled: November 29, 2021Publication date: March 24, 2022Inventors: Yukinori SHIMA, Masakatsu OHNO, Takumi SHIGENOBU
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Patent number: 11237444Abstract: A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with atop surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer.Type: GrantFiled: August 22, 2018Date of Patent: February 1, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masami Jintyou, Daisuke Kurosaki, Masakatsu Ohno, Junichi Koezuka
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Patent number: 11211501Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.Type: GrantFiled: June 30, 2020Date of Patent: December 28, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yukinori Shima, Masakatsu Ohno, Takumi Shigenobu
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Publication number: 20210257432Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: ApplicationFiled: May 4, 2021Publication date: August 19, 2021Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 11054687Abstract: A method for manufacturing a display device with low power consumption is provided. A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated.Type: GrantFiled: May 11, 2017Date of Patent: July 6, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masakatsu Ohno, Seiji Yasumoto, Naoto Goto, Hiroki Adachi
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Publication number: 20210175447Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.Type: ApplicationFiled: February 17, 2021Publication date: June 10, 2021Inventors: Masakatsu OHNO, Kayo KUMAKURA, Hiroyuki WATANABE, Seiji YASUMOTO, Satoru IDOJIRI, Hiroki ADACHI
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Patent number: 11004925Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: GrantFiled: May 12, 2020Date of Patent: May 11, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 10930870Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.Type: GrantFiled: April 8, 2020Date of Patent: February 23, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masakatsu Ohno, Kayo Kumakura, Hiroyuki Watanabe, Seiji Yasumoto, Satoru Idojiri, Hiroki Adachi
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Publication number: 20210026188Abstract: A method for manufacturing a display device with low power consumption is provided. A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated.Type: ApplicationFiled: May 11, 2017Publication date: January 28, 2021Inventors: Masakatsu OHNO, Seiji YASUMOTO, Naoto GOTO, Hiroki ADACHI
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Patent number: 10901255Abstract: A liquid crystal display device that is not influenced by a noise in obtaining positional information can be provided. The liquid crystal display device includes a first substrate provided with a pixel electrode and a common electrode with a first insulating film interposed therebetween. The pixel electrode and the common electrode partly overlap with each other. The liquid crystal display device further includes a second substrate provided with a pair of electrodes, a resin film covering the pair of electrodes, and a conductive film on the resin film. The pair of electrodes partly overlap with each other with a second insulating film interposed therebetween. The liquid crystal display device further includes a liquid crystal layer between the conductive film on the second substrate side and the pixel electrode and the common electrode on the first substrate side. A predetermined potential is supplied to the conductive film.Type: GrantFiled: February 7, 2018Date of Patent: January 26, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toru Tanabe, Takahiro Fukutome, Koji Moriya, Daisuke Kurosaki, Masakatsu Ohno
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Publication number: 20210020782Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.Type: ApplicationFiled: June 30, 2020Publication date: January 21, 2021Inventors: Yukinori SHIMA, Masakatsu OHNO, Takumi SHIGENOBU