Abstract: According to one embodiment, a measuring device includes a support body, a first light source, a second light source, a first sensor, and a second sensor. The support body is configured to support an end portion of a measurement target. The first light source is disposed on a front surface side of the support body. The second light source is disposed on a rear surface side of the support body. An optical axis of the second light source coincides with an optical axis of the first light source. The first sensor is configured to acquire an image of a mark in the measurement target in accordance with light from the first light source. The second sensor is configured to acquire an image of the mark in the measurement target in accordance with light from the second light source.

Abstract: According to one embodiment, a measuring device includes a support body, a first light source, a second light source, a first sensor, and a second sensor. The support body is configured to support an end portion of a measurement target. The first light source is disposed on a front surface side of the support body. The second light source is disposed on a rear surface side of the support body. An optical axis of the second light source coincides with an optical axis of the first light source. The first sensor is configured to acquire an image of a mark in the measurement target in accordance with light from the first light source. The second sensor is configured to acquire an image of the mark in the measurement target in accordance with light from the second light source.

Abstract: According to one embodiment, there is provided a semiconductor device manufacturing system, including a storage unit, a specifying unit, a determination unit and an adjustment unit. The storage unit stores device information indicating a relationship between image formation performance of an exposure device used for manufacturing a semiconductor device and mechanical operation accuracy. The specifying unit specifies a constraint of the mechanical operation accuracy according to the device information and the required image formation performance. The determination unit determines whether or not a correction parameter of an exposure condition satisfies the constraint. The adjustment unit adjusts the correction parameter according to a determination result of the determination unit.

Abstract: According to one embodiment, there is provided a semiconductor device manufacturing system, including a storage unit, a specifying unit, a determination unit and an adjustment unit. The storage unit stores device information indicating a relationship between image formation performance of an exposure device used for manufacturing a semiconductor device and mechanical operation accuracy. The specifying unit specifies a constraint of the mechanical operation accuracy according to the device information and the required image formation performance. The determination unit determines whether or not a correction parameter of an exposure condition satisfies the constraint. The adjustment unit adjusts the correction parameter according to a determination result of the determination unit.

Abstract: According to one embodiment, a correction plot in which a slit width is set different depending on overlay deviation in a shot region is generated. Then, a light-exposure scanning speed defined by a relative speed between a photomask stage with a photomask mounted thereon and a stage with a processing object mounted thereon is set, to obtain a desired light-exposure amount at each coordinate position, in accordance with the slit width in the correction plot. Then, a light-exposure process is performed, while controlling the slit width of a light-exposure slit, the photomask stage, and the stage, in accordance with the correction plot and the light-exposure scanning speed.

Abstract: According to one embodiment, a correction plot in which a slit width is set different depending on overlay deviation in a shot region is generated. Then, a light-exposure scanning speed defined by a relative speed between a photomask stage with a photomask mounted thereon and a stage with a processing object mounted thereon is set, to obtain a desired light-exposure amount at each coordinate position, in accordance with the slit width in the correction plot. Then, a light-exposure process is performed, while controlling the slit width of a light-exposure slit, the photomask stage, and the stage, in accordance with the correction plot and the light-exposure scanning speed.

Abstract: According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.

Abstract: According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that distributions of attenuation amount of the exposure light in the divided layout regions are different.