Abstract: The present disclosure provides a cathode electrode in which selectivity of hydrogen decreases and selectivity of a carbon dioxide reduction product increases in a catalytic reaction producing carbon monoxide, an olefinic hydrocarbon such as ethylene, and an alcohol such as ethanol by a reduction reaction of carbon dioxide. A cathode electrode that electrically reduces carbon dioxide, including: a first layer containing cuprous oxide, copper, and at least one additional metal element selected from the group consisting of silver, gold, zinc, cadmium, and tin; and a second layer formed on the first layer and containing a constituent element composed of at least one metal element selected from the group consisting of copper, silver, gold, zinc, cadmium, and tin.

Abstract: A composition for animal cell culture and techniques relating thereto are provided. A composition for animal cell culture, which contains an amino acid source and ?-ketoglutaric acid, and has the following properties: (A) the ?-ketoglutaric acid is a salt of ?-ketoglutaric acid; and/or (B) the amino acid source is free L-cysteine anhydrate is provided.

Abstract: A direct current bus control system including a direct current bus connecting between an input power supply and a load, including a main stabilizing device including a first charge-&-discharge element and a first power converter, and at least one sub-stabilizing device including a second charge-&-discharge element, a charge element, or a discharge element, and including a second power converter, wherein the first power converter is configured to derive a bus voltage target value according to a power storage amount index of the first charge-&-discharge element, and to bidirectionally pass direct current power, so that the voltage of the direct current bus matches the bus voltage target value, and the second power converter is configured to derive a current target value, and to pass direct current power, so that a current equal to the current target value flows.

Abstract: A direct current bus control system including a direct current bus connecting between an input power supply and a load, including a main stabilizing device including a first charge-&-discharge element and a first power converter, and at least one sub-stabilizing device including a second charge-&-discharge element, a charge element, or a discharge element, and including a second power converter, wherein the first power converter is configured to derive a bus voltage target value according to a power storage amount index of the first charge-&-discharge element, and to bidirectionally pass direct current power, so that the voltage of the direct current bus matches the bus voltage target value, and the second power converter is configured to derive a current target value, and to pass direct current power, so that a current equal to the current target value flows.

Abstract: The present invention provides a method of generating organic compounds and an organic-compound-generating system capable of efficiently generating organic-compounds even under a low-temperature environment by controlling a pH of an aqueous solution within a range from 5 to 10 during electrolysis in a case generating organic compounds by electrolyzing the aqueous solution containing carbon dioxide.

Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a first light-emitting layer; a second light-emitting layer; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a base layer with composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned into a random net shape; and a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer.

Abstract: A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.

Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain from the first semiconductor layer; a first quantum well layer that retains a segment shape of the first base segment; and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer. The second light-emitting layer has a second base layer that has a composition subject to stress strain from the first barrier layer; a second quantum well layer that retains a segment shape of the second base segment; and a second barrier layer.

Abstract: The present invention provides a coryneform bacterium having an ability to produce a heterologous fusion protein by secretory production, which has been modified to express a genetic construct for secretory production of the heterologous fusion protein encoding at least a heterologous fusion protein comprising an extein and an intein having an activity of acyl rearrangement. The method for producing proteins modified at the C-terminus is also provided.

Abstract: A semiconductor light-emitting element includes a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes a light-emitting layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer. The light-emitting layer includes a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and a quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The base layer has a composition of AlxGa1?xN (0?x?1), and the barrier layer has a composition of AlyGa1?yN (0?y<1), and the composition x and the composition y satisfy a relation of x>y.

Abstract: A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light emitting layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and of a conductivity type opposite to the conductivity type of the first semiconductor layer. The light-emitting layer has: a base layer that has a composition subject to stress strain from the first semiconductor layer and a plurality of base segments formed in a random net shape; and a quantum well structure layer formed by embedding the base layer and composed of at least one quantum well layer and at least one barrier layer. The base layer has a plurality of sub-base layers composed of AlGaN with different Al compositions.

Abstract: An object of the present invention is to provide a method for producing a peptide thioester compound, a peptide hydrazide compound, and a peptide amide compound. The present invention provides a method for producing a peptide hydrazide compound or a peptide amide compound by using a compound represented by Formula (2): wherein R1, R2, R3, and X are as defined in the specification, and using a hydrazine compound or an ammonia compound as a reaction reagent. The present invention also provides a method for producing a peptide thioester compound from the peptide hydrazide compound.

Abstract: A semiconductor light-emitting element according to the present invention is a semiconductor light-emitting element including: a first semiconductor layer of a first conductivity type; a light-emitting functional layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer has: a base layer formed on the first semiconductor layer, the base layer having a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, the base layer being doped with a dopant of the second conductivity type; and a quantum well light-emitting layer formed on the base layer.

Abstract: A semiconductor light-emitting element includes a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes a light-emitting layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer. The light-emitting layer includes a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and a quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The base layer has a composition of AlxGa1?xN (0?x?1), and the barrier layer has a composition of AlyGa1?yN (0?y<1), and the composition x and the composition y satisfy a relation of x>y.

Abstract: A light-emitting layer includes: a base layer with a plurality of base segments that have a composition subject to stress strain from a first semiconductor layer and are formed in a random net shape; and a quantum well structure layer including at least one quantum well layer and at least one barrier layer that are formed on the base layer. The base layer includes: a first sub-base layer; a trench that partitions the first sub-base layer for each of the plurality of base segments; and a second sub-base layer formed to bury the first sub-base layer.

Abstract: A semiconductor light-emitting element according to the present invention is a semiconductor light-emitting element including: a first semiconductor layer of a first conductivity type; a light-emitting functional layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a second conductivity type opposite to that of the first semiconductor layer. The light-emitting functional layer has: a base layer formed on the first semiconductor layer, the base layer having a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, the base layer being doped with a dopant of the second conductivity type; and a quantum well light-emitting layer formed on the base layer.

Abstract: A semiconductor light-emitting element includes a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes a light-emitting layer; and a second semiconductor layer that is formed on the light-emitting functional layer and is of a conductivity type opposite to a conductivity type of the first semiconductor layer. The light-emitting layer includes a base layer which has a composition subject to stress strain from the first semiconductor layer and has a plurality of base segments that are partitioned in a random net shape; and a quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The base layer has a composition of AlxGa1-xN (0?x?1), and the barrier layer has a composition of AlyGa1-yN (0?y<1), and the composition x and the composition y satisfy a relation of x>y.

Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain from the first semiconductor layer; a first quantum well layer that retains a segment shape of the first base segment; and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer. The second light-emitting layer has a second base layer that has a composition subject to stress strain from the first barrier layer; a second quantum well layer that retains a segment shape of the second base segment; and a second barrier layer.

Abstract: A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a first light-emitting layer; a second light-emitting layer; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a base layer with composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned into a random net shape; and a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer.

Abstract: A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light emitting layer formed on the first semiconductor layer; and a second semiconductor layer that is formed on the light-emitting functional layer and of a conductivity type opposite to the conductivity type of the first semiconductor layer. The light-emitting layer has: a base layer that has a composition subject to stress strain from the first semiconductor layer and a plurality of base segments formed in a random net shape; and a quantum well structure layer formed by embedding the base layer and composed of at least one quantum well layer and at least one barrier layer. The base layer has a plurality of sub-base layers composed of AlGaN with different Al compositions.