Abstract: A semiconductor device includes a substrate main body having a first surface and a second surface, an electric component arranged in the substrate main body, a first internal conductor pattern arranged in a first circuit layer located between the first surface and the electric component, and at least one heat absorbing member arranged inside the substrate main body and thermally connected to the first internal conductor pattern.

Abstract: A semiconductor device may include a first conductor plate on which a first semiconductor element, a second semiconductor element and a first circuit board are disposed, and a plurality of first signal terminals. A size of the second semiconductor is smaller than a size of the first semiconductor element. In a plan view along a direction perpendicular to the first conductor plate, the plurality of first signal terminals is located in a first direction with respect to the first semiconductor element. The second semiconductor element and the first circuit board are located between the plurality of first signal terminals and the first semiconductor element and are arranged along a second direction that is perpendicular to the first direction. A signal pad of the first semiconductor element is connected to a corresponding one of the plurality of first signal terminals via a signal transmission path of the first circuit board.

Abstract: A semiconductor device may include a first conductor plate on which a first semiconductor element, a second semiconductor element and a first circuit board are disposed, and a plurality of first signal terminals. A size of the second semiconductor is smaller than a size of the first semiconductor element. In a plan view along a direction perpendicular to the first conductor plate, the plurality of first signal terminals is located in a first direction with respect to the first semiconductor element. The second semiconductor element and the first circuit board are located between the plurality of first signal terminals and the first semiconductor element and are arranged along a second direction that is perpendicular to the first direction. A signal pad of the first semiconductor element is connected to a corresponding one of the plurality of first signal terminals via a signal transmission path of the first circuit board.

Abstract: A semiconductor module includes a semiconductor substrate, a first electrode in contact with a first surface of the semiconductor substrate, a second electrode in contact with a second surface of the semiconductor substrate, a first conductor connected to the first electrode via a first solder layer, and a second conductor connected to the second electrode via a second solder layer. The second electrode overlaps the entire first electrode and is wider than the first electrode when seen along a thickness direction of the semiconductor substrate. A recessed portion distributed along an outer peripheral edge of the first electrode is disposed in a joining surface of the second conductor in contact with the second solder layer to overlap the outer peripheral edge of the first electrode when the semiconductor substrate is seen along the thickness direction.

Abstract: A semiconductor module includes: a first semiconductor chip including a surface provided with a first signal electrode; a second semiconductor chip arranged apart from the first semiconductor chip and including a surface on the first semiconductor chip side provided with a second signal electrode; a first signal lead electrically connected to the first signal electrode; and a second signal lead electrically connected to the second signal electrode. The first signal lead and the second signal lead are arranged so that a height position of the first signal lead and a height position of the second signal lead match in a height direction that is toward the second semiconductor chip from the first semiconductor chip.

Abstract: A semiconductor device includes a first electrode, a second electrode, and an endothermic layer. The first electrode, the second electrode and the endothermic layer are formed on a semiconductor substrate. The first electrode is electrically conductive with an element formed inside of the semiconductor substrate. The endothermic layer is in contact with the first electrode and has electric conductivity. The second electrode is in contact with at least one of the first electrode and the endothermic layer and soldered to a metal electric conductor. Herein, at least one of a work function and contact resistivity of the first electrode is smaller than that of the endothermic layer. A heat of melting of the endothermic layer is larger than that of the first electrode. Solder joinability of the second electrode is higher than that of the endothermic layer.

Abstract: A semiconductor device includes a lead frame, a semiconductor chip soldered to the lead frame, and a metal bar. The metal bar is arranged inside a solder layer so as to extend along one side of the semiconductor chip. When viewed in a stacking direction of the lead frame and the semiconductor chip, the metal bar is arranged so that a part of the metal bar overlaps the semiconductor chip, and the rest of the metal bar does not overlap the semiconductor chip. Then, in a section of the metal bar in a plane perpendicular to a longitudinal direction of the metal bar, an outline of the metal bar on a side of a center of the semiconductor chip is curved so as to project on the side of the center of the semiconductor chip.

Abstract: A semiconductor module includes a semiconductor device, a first conductive member, a second conductive member, a cylinder, and a cover. The first conductive member is in contact with a first electrode of the semiconductor device. The second conductive member is in contact with a second electrode of the semiconductor device. The cylinder encompasses the semiconductor device and is fixed to the first conductive member, and a first thread groove is formed on the cylinder. A second thread groove is formed on the cover. The cover is fixed to the cylinder by an engagement of the second thread groove with the first thread groove. The semiconductor device and the second conductive member are fixed by being sandwiched between the first conductive member and the cover. The second conductive member includes a portion extending from inside to outside the cylinder by penetrating an outer peripheral wall of the cylinder.

Abstract: A semiconductor module includes a semiconductor device, a first conductive member, a second conductive member, a cylinder, and a cover. The first conductive member is in contact with a first electrode of the semiconductor device. The second conductive member is in contact with a second electrode of the semiconductor device. The cylinder encompasses the semiconductor device and is fixed to the first conductive member, and a first thread groove is formed on the cylinder. A second thread groove is formed on the cover. The cover is fixed to the cylinder by an engagement of the second thread groove with the first thread groove. The semiconductor device and the second conductive member are fixed by being sandwiched between the first conductive member and the cover. The second conductive member includes a portion extending from inside to outside the cylinder by penetrating an outer peripheral wall of the cylinder.

Abstract: In an information recording/reproducing device, a resting period (tm) is set to be constant regardless of a mark length of a recording mark and regardless of the number of divided recording pulses. Consequently, it is possible to provide an information recording device, an information recording method, and an information recording medium, each allowing formation of a recording mark with a uniform width by use of a low laser power and allowing reduction of the number of parameters for determining a recording waveform, when forming a long recording mark.

Abstract: An optical information medium includes a substrate and a recording layer formed on the substrate. The recording layer includes a first recording film formed of a first material that has Si as a main constituent and a second recording film that is formed of a second material that has Cu as a main constituent and to which Ni is added, the second recording film being formed in a periphery of the first recording film. Data is recorded onto and reproduced from the recording layer by irradiation of the recording layer with a laser beam.

Abstract: An optical information medium includes a substrate and a recording layer formed on the substrate. The recording layer includes a first recording film formed of a first material that has Si as a main constituent and a second recording film that is formed of a second material that has Cu as a main constituent and to which In is added, the second recording film being formed in a periphery of the first recording film. Data is recorded onto and reproduced from the recording layer by irradiation of the recording layer with a laser beam.

Abstract: An optical information medium includes a substrate and a recording layer formed on the substrate. The recording layer includes a first recording film formed of a first material that has Si as a main constituent and a second recording film that is formed of a second material that has Cu as a main constituent and to which Sn is added, the second recording film being formed in a periphery of the first recording film. Data is recorded onto and reproduced from the recording layer by irradiation of the recording layer with a laser beam.

Abstract: An optical recording medium includes a substrate, a first recording layer formed on the substrate and containing an element selected from the group consisting of Si, Ge, C, Sn, Zn and Cu as a primary component, and a second recording layer located in the vicinity of the first recording layer and containing Al as a primary component, the optical recording medium being constituted to be irradiated by a laser beam projected onto the side opposite from the substrate and the total thickness of the first recording layer and the second recording layer being equal to or thinner than 40 nm. According to the thus constituted optical recording medium, it is possible to decrease a noise level and improve a C/N ratio in a reproduced signal.

Abstract: An information medium includes a reflective layer with Ag as a main constituent, a sulfide species dielectric layer, and a recording layer in the mentioned order on a surface of a substrate. Data is recorded and reproduced by emitting a laser beam from an opposite side of the recording layer to the substrate. A barrier layer with an oxide of Zn as a main constituent is formed between the reflective layer and the sulfide species dielectric layer.

Abstract: An optical information recording medium which makes it possible to reduce the noise level, improve the C/N ratio and store record data for a long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as the main component. The second sub-recording film is formed of a second material containing Al as the main component and having Au added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer side.

Abstract: An optical information recording medium which is capable of performing high-density recording of record data, and storing the recorded data for a long time period such that the recorded data can be normally reproduced during the long time period. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as the main component. The second sub-recording film is formed of a second material containing Cu as the main component and having Au added thereto, and disposed in the vicinity of the first recording film.

Abstract: An optical information recording medium which makes it possible to reduce the noise level and improve the C/N ratio. An optical information recording medium has a recording layer formed on a substrate, for having a laser beam irradiated thereto for recording and reproduction of record data. The recording layer includes a first sub-recording film and a second sub-recording film. The first sub-recording film is formed of a first material containing Si as the main component. The second sub-recording film is formed of a second material containing Zn as the main component and having Cu added thereto, and disposed in the vicinity of the first recording film. The laser beam is irradiated to the recording layer via a light transmitting layer formed in a manner covering the recording layer side.

Abstract: An optical recording medium includes a substrate, a light transmission layer and a plurality of recording layers between the substrate and the light transmission layer and capable of recording data in the plurality of recording layers and reproducing data recorded in the plurality of recording layers by projecting a laser beam via the light transmission layer onto the plurality of recording layers, at least one recording layer other than a farthest recording layer from the light transmission layer including a reflective film containing Ag as a primary component and C as an additive. In the thus constituted optical recording medium, recording characteristics and reproducing characteristic of the respective recording layers can be improved.

Abstract: An optical recording medium includes a substrate, a light transmission layer and a plurality of recording layers between the substrate and the light transmission layer and capable of recording data in the plurality of recording layers and reproducing data recorded in the plurality of recording layers by projecting a laser beam via the light transmission layer onto the plurality of recording layers, at least one recording layer other than a farthest recording layer from the light transmission layer among the plurality of recording layers including a first recording film containing Si as a primary component and a second recording film located in the vicinity of the first recording film and containing Cu as a primary component. In the thus constituted optical recording medium, it is possible to record data in a farthest recording layer from the light transmission layer and reproduce data from the farthest recording layer in a desired manner.