Patents by Inventor Masaki Hara
Masaki Hara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20010019901Abstract: A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.Type: ApplicationFiled: February 8, 2001Publication date: September 6, 2001Inventors: Naoki Sano, Masaki Hara, Mitsunobu Sekiya, Toshiyuki Sameshima
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Publication number: 20010017726Abstract: The hinge (13) should preferably be formed to have a higher resistance than ever against the pivoting of the mirror body (12) to effectively prevent the hinge (13) from being damaged. By adopting a suitable one of a variety of production steps as necessary, the hinge (13) can be formed more finely and with a higher precision and thus the micro mirror unit can be produced more easily in a shorter time. To this end, the hinge (13) is formed from a different material, such as SiNx, from the mirror substrate material from which the frame (11) and mirror body (12) are formed.Type: ApplicationFiled: December 27, 2000Publication date: August 30, 2001Inventors: Masaki Hara, Kazuhito Hori, Hiroto Ido, Naoto Kojima, Kazuhiro Hane
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Patent number: 6232245Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.Type: GrantFiled: March 8, 1999Date of Patent: May 15, 2001Assignee: Sony CorporationInventor: Masaki Hara
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Patent number: 6221756Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material. In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns. In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width.Type: GrantFiled: March 4, 1999Date of Patent: April 24, 2001Assignee: Sony corporationInventor: Masaki Hara
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Patent number: 6211451Abstract: A music apparatus is communicable with a supervisory computer through a network for remotely training a user in matching with a skill level. In the music apparatus, an instrument is manually operable by the user for generating a performance. A monitor displays a lesson score in matching with the skill level so that the user is prompted to render the displayed lesson score by operating the instrument for generating a sample performance. A processor compares event data representative of the sample performance with note data representative of the lesson score to locally execute a quantitative evaluation of the sample performance. A transmitter transmits the event data representative of the sample performance to the supervisory computer through the network so that the supervisory computer can work to remotely provide a qualitative evaluation of the sample performance according to the event data to thereby arrange instruction data.Type: GrantFiled: January 26, 1999Date of Patent: April 3, 2001Assignee: Yamaha CorporationInventors: Yutaka Tohgi, Akane Iyatomi, Masaki Hara, Tomoyuki Hirose
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Patent number: 6136726Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns.In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width.Type: GrantFiled: March 4, 1999Date of Patent: October 24, 2000Assignee: Sony CorporationInventor: Masaki Hara
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Patent number: 6075536Abstract: To provide an information visualizing system for presenting information of items to a user flexibly and automatically according to user's manipulation to control a virtual space, the information visualizing includes a target object indicator (22) for designating certain of visual object displayed in the virtual space as target objects whereof positional relation to a target indication object displayed in the virtual space satisfies a certain condition; a related-information generator (23 and 24) for generating related-information to be displayed in connection to the target objects according to relational condition designated by the user by processing information concerning the target objects; a target object revisor (26) for controlling the target object indicator to update the target objects automatically at appropriate intervals according to the situation of the virtual space; and a related-information (27) revisor for controlling the related-information generator (23 and 24) to update the related-informatiType: GrantFiled: August 24, 1998Date of Patent: June 13, 2000Assignee: NEC CorporationInventors: Kazuo Kunieda, Masaki Hara
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Patent number: 6072113Abstract: A fully computerized musical performance teaching system comprises a computer apparatus having a keyboard and a display and is connectable to an electronic musical instrument. An application program provides the computer with various functions such as of judging student's skills, selecting music pieces for practice, training the student in performance and evaluating the student's progress through the teaching course. The judging function is to judge the student's performance skill from the student's responses to the subjects which the computer presents. The selecting function is to select a piece of music for practice according to the judgment results and the student's wishes and also to select a tutoring manner from among several prepared manners. The training function is to plan a practice schedule to meet the student's performance skill and wishes and to let the student practice with proper music pieces.Type: GrantFiled: October 17, 1997Date of Patent: June 6, 2000Assignee: Yamaha CorporationInventors: Yutaka Tohgi, Masaki Hara, Tomoyuki Hirose
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Patent number: 6066795Abstract: An apparatus for using a computer keyboard as a musical instrument keyboard, the apparatus having: a computer keyboard having a plurality of keys for generating key information upon operation of each key; a unit for switching between an enable state and a disabled state of a musical instrument keyboard function; and a MIDI data generating unit for generating MIDI data corresponding to the key information upon operation of each key of the computer keyboard if the musical instrument keyboard function is in the enabled state.Type: GrantFiled: February 18, 1999Date of Patent: May 23, 2000Assignee: Yamaha CorporationInventor: Masaki Hara
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Patent number: 6048801Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.Type: GrantFiled: June 30, 1998Date of Patent: April 11, 2000Assignee: Sony CorporationInventor: Masaki Hara
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Patent number: 5910015Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.Type: GrantFiled: February 18, 1998Date of Patent: June 8, 1999Assignee: Sony CorporationInventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
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Patent number: 5888909Abstract: A method of forming an interlayer film on a substrate with a plurality of wiring patterns is provided. The interlayer film is deposited on the substrate in a multi step process. A portion of the interlayer film is first deposited in a layer having relatively reduced fluidity so that the film is formed with an almost uniform thickness regardless of any pattern width present on a substrate. Thereafter, a second portion or layer of the intelayer film is deposited in a layer having relatively increased fluidity so that the second layer material fills up any troughs formed between wiring patterns. In a preferred embodiment, an undercoating film may be formed in advance which is then rendered hydrophobic so that the first portion of the interlayer film deposited thereon has reduced fluidity such that the first portion is uniformly deposited regardless of any pattern width.Type: GrantFiled: July 18, 1997Date of Patent: March 30, 1999Assignee: Sony CorporationInventor: Masaki Hara
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Patent number: 5889292Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.Type: GrantFiled: December 13, 1995Date of Patent: March 30, 1999Assignee: Sony CorporationInventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
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Patent number: 5726487Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.Type: GrantFiled: October 28, 1994Date of Patent: March 10, 1998Assignee: Sony CorporationInventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
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Patent number: 5648276Abstract: A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber.Type: GrantFiled: May 26, 1994Date of Patent: July 15, 1997Assignee: Sony CorporationInventors: Masaki Hara, Naoki Sano, Toshiyuki Sameshima, Atsushi Kohno, Mitsunobu Sekiya, Yasuhiro Kanaya, Michihisa Yano
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Patent number: 5591653Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.Type: GrantFiled: May 15, 1995Date of Patent: January 7, 1997Assignee: Sony CorporationInventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
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Patent number: 5431126Abstract: A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.Type: GrantFiled: June 22, 1993Date of Patent: July 11, 1995Assignee: Sony CorporationInventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Gosain D. Pal, Atsushi Kono, Jonathan Westwater, Setsuo Usui
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Patent number: 5304250Abstract: A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area.Type: GrantFiled: July 7, 1992Date of Patent: April 19, 1994Assignee: Sony CorporationInventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Setsuo Usui
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Patent number: 5145808Abstract: A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e.Type: GrantFiled: August 20, 1991Date of Patent: September 8, 1992Assignee: Sony CorporationInventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Setsuo Usui
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Patent number: D329428Type: GrantFiled: January 4, 1990Date of Patent: September 15, 1992Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Toshiya Yoshida, Masaki Hara, Masato Goto, Katsunori Takagi