Patents by Inventor Masaki Hara

Masaki Hara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010019901
    Abstract: A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.
    Type: Application
    Filed: February 8, 2001
    Publication date: September 6, 2001
    Inventors: Naoki Sano, Masaki Hara, Mitsunobu Sekiya, Toshiyuki Sameshima
  • Publication number: 20010017726
    Abstract: The hinge (13) should preferably be formed to have a higher resistance than ever against the pivoting of the mirror body (12) to effectively prevent the hinge (13) from being damaged. By adopting a suitable one of a variety of production steps as necessary, the hinge (13) can be formed more finely and with a higher precision and thus the micro mirror unit can be produced more easily in a shorter time. To this end, the hinge (13) is formed from a different material, such as SiNx, from the mirror substrate material from which the frame (11) and mirror body (12) are formed.
    Type: Application
    Filed: December 27, 2000
    Publication date: August 30, 2001
    Inventors: Masaki Hara, Kazuhito Hori, Hiroto Ido, Naoto Kojima, Kazuhiro Hane
  • Patent number: 6232245
    Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.
    Type: Grant
    Filed: March 8, 1999
    Date of Patent: May 15, 2001
    Assignee: Sony Corporation
    Inventor: Masaki Hara
  • Patent number: 6221756
    Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material. In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns. In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width.
    Type: Grant
    Filed: March 4, 1999
    Date of Patent: April 24, 2001
    Assignee: Sony corporation
    Inventor: Masaki Hara
  • Patent number: 6211451
    Abstract: A music apparatus is communicable with a supervisory computer through a network for remotely training a user in matching with a skill level. In the music apparatus, an instrument is manually operable by the user for generating a performance. A monitor displays a lesson score in matching with the skill level so that the user is prompted to render the displayed lesson score by operating the instrument for generating a sample performance. A processor compares event data representative of the sample performance with note data representative of the lesson score to locally execute a quantitative evaluation of the sample performance. A transmitter transmits the event data representative of the sample performance to the supervisory computer through the network so that the supervisory computer can work to remotely provide a qualitative evaluation of the sample performance according to the event data to thereby arrange instruction data.
    Type: Grant
    Filed: January 26, 1999
    Date of Patent: April 3, 2001
    Assignee: Yamaha Corporation
    Inventors: Yutaka Tohgi, Akane Iyatomi, Masaki Hara, Tomoyuki Hirose
  • Patent number: 6136726
    Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns.In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width.
    Type: Grant
    Filed: March 4, 1999
    Date of Patent: October 24, 2000
    Assignee: Sony Corporation
    Inventor: Masaki Hara
  • Patent number: 6075536
    Abstract: To provide an information visualizing system for presenting information of items to a user flexibly and automatically according to user's manipulation to control a virtual space, the information visualizing includes a target object indicator (22) for designating certain of visual object displayed in the virtual space as target objects whereof positional relation to a target indication object displayed in the virtual space satisfies a certain condition; a related-information generator (23 and 24) for generating related-information to be displayed in connection to the target objects according to relational condition designated by the user by processing information concerning the target objects; a target object revisor (26) for controlling the target object indicator to update the target objects automatically at appropriate intervals according to the situation of the virtual space; and a related-information (27) revisor for controlling the related-information generator (23 and 24) to update the related-informati
    Type: Grant
    Filed: August 24, 1998
    Date of Patent: June 13, 2000
    Assignee: NEC Corporation
    Inventors: Kazuo Kunieda, Masaki Hara
  • Patent number: 6072113
    Abstract: A fully computerized musical performance teaching system comprises a computer apparatus having a keyboard and a display and is connectable to an electronic musical instrument. An application program provides the computer with various functions such as of judging student's skills, selecting music pieces for practice, training the student in performance and evaluating the student's progress through the teaching course. The judging function is to judge the student's performance skill from the student's responses to the subjects which the computer presents. The selecting function is to select a piece of music for practice according to the judgment results and the student's wishes and also to select a tutoring manner from among several prepared manners. The training function is to plan a practice schedule to meet the student's performance skill and wishes and to let the student practice with proper music pieces.
    Type: Grant
    Filed: October 17, 1997
    Date of Patent: June 6, 2000
    Assignee: Yamaha Corporation
    Inventors: Yutaka Tohgi, Masaki Hara, Tomoyuki Hirose
  • Patent number: 6066795
    Abstract: An apparatus for using a computer keyboard as a musical instrument keyboard, the apparatus having: a computer keyboard having a plurality of keys for generating key information upon operation of each key; a unit for switching between an enable state and a disabled state of a musical instrument keyboard function; and a MIDI data generating unit for generating MIDI data corresponding to the key information upon operation of each key of the computer keyboard if the musical instrument keyboard function is in the enabled state.
    Type: Grant
    Filed: February 18, 1999
    Date of Patent: May 23, 2000
    Assignee: Yamaha Corporation
    Inventor: Masaki Hara
  • Patent number: 6048801
    Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.
    Type: Grant
    Filed: June 30, 1998
    Date of Patent: April 11, 2000
    Assignee: Sony Corporation
    Inventor: Masaki Hara
  • Patent number: 5910015
    Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
    Type: Grant
    Filed: February 18, 1998
    Date of Patent: June 8, 1999
    Assignee: Sony Corporation
    Inventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
  • Patent number: 5888909
    Abstract: A method of forming an interlayer film on a substrate with a plurality of wiring patterns is provided. The interlayer film is deposited on the substrate in a multi step process. A portion of the interlayer film is first deposited in a layer having relatively reduced fluidity so that the film is formed with an almost uniform thickness regardless of any pattern width present on a substrate. Thereafter, a second portion or layer of the intelayer film is deposited in a layer having relatively increased fluidity so that the second layer material fills up any troughs formed between wiring patterns. In a preferred embodiment, an undercoating film may be formed in advance which is then rendered hydrophobic so that the first portion of the interlayer film deposited thereon has reduced fluidity such that the first portion is uniformly deposited regardless of any pattern width.
    Type: Grant
    Filed: July 18, 1997
    Date of Patent: March 30, 1999
    Assignee: Sony Corporation
    Inventor: Masaki Hara
  • Patent number: 5889292
    Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
    Type: Grant
    Filed: December 13, 1995
    Date of Patent: March 30, 1999
    Assignee: Sony Corporation
    Inventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
  • Patent number: 5726487
    Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
    Type: Grant
    Filed: October 28, 1994
    Date of Patent: March 10, 1998
    Assignee: Sony Corporation
    Inventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
  • Patent number: 5648276
    Abstract: A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber.
    Type: Grant
    Filed: May 26, 1994
    Date of Patent: July 15, 1997
    Assignee: Sony Corporation
    Inventors: Masaki Hara, Naoki Sano, Toshiyuki Sameshima, Atsushi Kohno, Mitsunobu Sekiya, Yasuhiro Kanaya, Michihisa Yano
  • Patent number: 5591653
    Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
    Type: Grant
    Filed: May 15, 1995
    Date of Patent: January 7, 1997
    Assignee: Sony Corporation
    Inventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Dharam Pal Gosain, Setsuo Usui
  • Patent number: 5431126
    Abstract: A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.
    Type: Grant
    Filed: June 22, 1993
    Date of Patent: July 11, 1995
    Assignee: Sony Corporation
    Inventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Gosain D. Pal, Atsushi Kono, Jonathan Westwater, Setsuo Usui
  • Patent number: 5304250
    Abstract: A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area.
    Type: Grant
    Filed: July 7, 1992
    Date of Patent: April 19, 1994
    Assignee: Sony Corporation
    Inventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Setsuo Usui
  • Patent number: 5145808
    Abstract: A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e.
    Type: Grant
    Filed: August 20, 1991
    Date of Patent: September 8, 1992
    Assignee: Sony Corporation
    Inventors: Toshiyuki Sameshima, Masaki Hara, Naoki Sano, Setsuo Usui
  • Patent number: D329428
    Type: Grant
    Filed: January 4, 1990
    Date of Patent: September 15, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Toshiya Yoshida, Masaki Hara, Masato Goto, Katsunori Takagi