Patents by Inventor Masaki Koizumi
Masaki Koizumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10927453Abstract: A TiN-based film includes TiON films having an oxygen content of 50% or above and TiN films which are laminated alternately on a substrate. In a TiN-based film forming method, a TiON film having an oxygen content of 50 at % or above and a TiN film are alternately formed on a substrate.Type: GrantFiled: November 14, 2017Date of Patent: February 23, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Tadahiro Ishizaka, Masaki Koizumi, Masaki Sano, Seokhyoung Hong
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Patent number: 10529598Abstract: A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.Type: GrantFiled: November 21, 2014Date of Patent: January 7, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Seokhyoung Hong, Taichi Monden, Yoshihiro Miyagawa, Masaki Koizumi
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Patent number: 10483100Abstract: A TiON film forming method is provided. A cycle of forming a unit TiN film at a predetermined processing temperature by alternately supplying a Ti-containing gas and a nitriding gas into the processing chamber accommodating a target substrate and oxidizing the unit TiN film by supplying an oxidizing agent into the processing chamber is repeated multiple times. In an initial stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X1 times and supplying the oxidizing agent is repeated Y1 times. In a later stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X2 times and supplying the oxidizing agent is repeated Y2 times until a desired film thickness is obtained. The number of repetition X1 is set to be greater than the number of repetition X2.Type: GrantFiled: September 22, 2016Date of Patent: November 19, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Tadahiro Ishizaka, Masaki Koizumi, Masaki Sano, Seokhyoung Hong
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Patent number: 10199451Abstract: A lower electrode is made of a TiN-based material and provided at a base of a dielectric film in a DRAM capacitor. The lower electrode includes first TiON films provided at opposite outer sides, the first TiON films having a relatively low oxygen concentration, and a second TiON film provided between the first TiON films, the second TiON film having a relatively high oxygen concentration.Type: GrantFiled: December 21, 2016Date of Patent: February 5, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Tadahiro Ishizaka, Masaki Koizumi, Masaki Sano, Seokhyoung Hong
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Publication number: 20180135169Abstract: A TiN-based film includes TiON films having an oxygen content of 50% or above and TiN films which are laminated alternately on a substrate. In a TiN-based film forming method, a TiON film having an oxygen content of 50 at % or above and a TiN film are alternately formed on a substrate.Type: ApplicationFiled: November 14, 2017Publication date: May 17, 2018Inventors: Tadahiro ISHIZAKA, Masaki KOIZUMI, Masaki SANO, Seokhyoung HONG
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Publication number: 20170179219Abstract: A lower electrode is made of a TiN-based material and provided at a base of a dielectric film in a DRAM capacitor. The lower electrode includes first TiON films provided at opposite outer sides, the first TiON films having a relatively low oxygen concentration, and a second TiON film provided between the first TiON films, the second TiON film having a relatively high oxygen concentration.Type: ApplicationFiled: December 21, 2016Publication date: June 22, 2017Inventors: Tadahiro ISHIZAKA, Masaki KOIZUMI, Masaki SANO, Seokhyoung HONG
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Publication number: 20170092489Abstract: A TiON film forming method is provided. A cycle of forming a unit TiN film at a predetermined processing temperature by alternately supplying a Ti-containing gas and a nitriding gas into the processing chamber accommodating a target substrate and oxidizing the unit TiN film by supplying an oxidizing agent into the processing chamber is repeated multiple times. In an initial stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X1 times and supplying the oxidizing agent is repeated Y1 times. In a later stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X2 times and supplying the oxidizing agent is repeated Y2 times until a desired film thickness is obtained. The number of repetition X1 is set to be greater than the number of repetition X2.Type: ApplicationFiled: September 22, 2016Publication date: March 30, 2017Inventors: Tadahiro ISHIZAKA, Masaki KOIZUMI, Masaki SANO, Seokhyoung HONG
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Publication number: 20150144621Abstract: A matching method and a microwave heating method in a microwave heating apparatus for heating a substrate by introducing a microwave into a processing chamber comprises an initial matching step of performing a matching so that a reflection power to a microwave introducing unit is minimized in a state where the substrate is maintained at a first height position by a supporting member. And a second height position determination step of introducing the microwave into the processing chamber by the microwave introducing unit and determining a second height position of the substrate based on at least a temperature of the substrate while adjusting a height of the substrate by the supporting member.Type: ApplicationFiled: November 20, 2014Publication date: May 28, 2015Inventors: Seokhyoung HONG, Mitsutoshi ASHIDA, Yoshihiro MIYAGAWA, Masaki KOIZUMI
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Publication number: 20150144622Abstract: A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.Type: ApplicationFiled: November 21, 2014Publication date: May 28, 2015Inventors: Seokhyoung HONG, Taichi MONDEN, Yoshihiro MIYAGAWA, Masaki KOIZUMI
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Publication number: 20140174609Abstract: A method for manufacturing a high-strength steel sheet for a can, including (a) hot rolling a steel slab at a slab extraction temperature of 1200° C. or more and a finish rolling temperature of (Ar3 transformation temperature?30)° C. or more, the steel slab containing, on the basis of mass percent, more than 0.02%, but 0.10% or less of C, 0.10% or less of Si, 1.5% or less of Mn, 0.20% or less of P, 0.20% or less of S, 0.10% or less of Al, 0.0120% to 0.0250% of N, and the balance being Fe and incidental impurities; (b) coiling at a temperature of 650° C. or less; (c) pickling; (d) carrying out a first cold rolling; (e) continuously annealing; and (f) carrying out a second cold rolling at a reduction ratio of 10% or more and less than 20%.Type: ApplicationFiled: March 3, 2014Publication date: June 26, 2014Applicant: JFE Steel CorporationInventors: Makoto ARATANI, Toshikatsu KATO, Katsuhito KAWAMURA, Takumi TANAKA, Katsumi KOJIMA, Kaku SATO, Shigeko SUJITA, Masaki KOIZUMI
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Patent number: 8021717Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.Type: GrantFiled: January 12, 2009Date of Patent: September 20, 2011Assignee: Tokyo Electron LimitedInventors: Seishi Murakami, Masaki Koizumi, Hiroaki Ashizawa, Masato Koizumi
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Publication number: 20110076177Abstract: A steel sheet for cans that has a yield stress of at least 500 Mpa after coating and baking and a method for manufacturing the steel sheet for cans are provided. The steel sheet for cans contains, on the basis of mass percent, C: more than 0.02% but 0.10% or less, Si: 0.10% or less, Mn: 1.5% or less, P: 0.20% or less, S: 0.20% or less, Al: 0.10% or less, N: 0.0120% to 0.0250%, dissolved N being 0.0100% or more, and a remainder of Fe and incidental impurities. A high-strength material can be obtained by maintaining the absolute quantity of dissolved N at a certain value or more and performing hardening by quench aging and strain aging, for example, in a printing process, a film lamination process, or a drying and baking process performed before can manufacturing. In the manufacture, hot rolling is performed at a slab extraction temperature of 1200° C. or more and a finish rolling temperature of (Ar3 transformation temperature—30)° C. or more, and coiling is performed at 650° C. or less.Type: ApplicationFiled: April 1, 2009Publication date: March 31, 2011Applicant: JFE STEEL CORPORATIONInventors: Makoto Aratani, Toshikatsu Kato, Katsuhito Kawamura, Takumi Tanaka, Katsumi Kojima, Kaku Sato, Shigeko Sujita, Masaki Koizumi
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Publication number: 20090142513Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.Type: ApplicationFiled: January 12, 2009Publication date: June 4, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Seishi MURAKAMI, Masaki Koizumi, Hiroaki Ashizawa, Masato Koizumi