Abstract: A semiconductor device according to an embodiment includes a stacked body having first films and second films that are alternately stacked, a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films, and a channel film extending in the stacked body in the stacking direction. The channel film includes a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor.

Abstract: An inspection device (10) includes a fixing portion (200) fixing a semiconductor device (500) being a DUT and an antenna portion (30) inspecting the semiconductor device (500). The fixing portion (200) defines a hole (210) exposing at least a portion of the semiconductor device (500). At least a portion of the inside surface of the hole (210) in the fixing portion (200) includes a step portion.

Abstract: A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.

Abstract: A connector is provided that includes a terminal for which, taking a plate width direction of a first retained portion as a first plate width direction, a plate thickness direction of a second retained portion faces in a direction intersecting with a flat plane perpendicular to the first plate width direction, and that is easy to manufacture and is applicable to high speed transmission.

Abstract: In connectors including a housing having a separation wall, an impedance of a portion of a terminal in close proximity to the separation wall is suppressed from dropping excessively. Housings of the connector include a separation wall positioned between adjacent terminals. The separation wall includes a one-side opposing face and an other-side opposing face. Furthermore, the separation wall is formed between the one-side opposing face and the other-side opposing face, and includes a gap portion positioned between the adjacent terminals.

Abstract: The invention provides a liquid crystal polyester resin which not only has a low-dielectric tangent, but also is excellent in balance between heat resistance and processing stability. The liquid crystal polyester resin comprises: a structural unit (I) derived from an aromatic hydroxycarboxylic acid; a structural unit (II) derived from an aromatic diol compound; and a structural unit (III) derived from an aromatic dicarboxylic acid, wherein the structural unit (I) is a structural unit (IA) derived from 6-hydroxy-2-naphthoic acid, the structural unit (III) contains a structural unit (IIIA) derived from terephthalic acid, a structural unit (IIIB) derived from isophthalic acid, and a structural unit (IIIC) derived from 2,6-naphthalenedicarboxylic acid, the dielectric tangent at a measurement frequency of 10 GHz is 1.50×10?3 or less, the melting point is 290° C. or more, and the difference in temperature between the melting point and the crystallization point is 30° C. or more.

Abstract: The invention provides a liquid crystal polyester resin which not only has a low-dielectric tangent, but also is excellent in balance between heat resistance and processing stability. The liquid crystal polyester resin comprises: a structural unit (I) derived from an aromatic hydroxycarboxylic acid; a structural unit (II) derived from an aromatic diol compound; and a structural unit (III) derived from an aromatic dicarboxylic acid, wherein the structural unit (I) contains a structural unit (IA) derived from 6-hydroxy-2-naphthoic acid, the structural unit (III) contains a structural unit (IIIA) derived from terephthalic acid, and a structural unit (IIIB) derived from isophthalic acid, the dielectric tangent at a measurement frequency of 10 GHz is 1.50×10?3 or less, the melting point is 295° C. or more, and the difference between the melting point and the crystallization point is 35° C. or more.

Abstract: In one embodiment, a semiconductor device includes a stacked film including electrode layers and insulating layers that are alternately stacked in a first direction. The device further includes a first insulator, a charge storage layer, a second insulator and a semiconductor layer that are provided in the stacked film. The device further includes a third insulator provided between an electrode layer and an insulating layer and between the electrode layer and the first insulator, and including aluminum oxide having an ? crystal phase.

Abstract: The invention provides a liquid crystal polyester resin which not only has a low-dielectric tangent, but also is excellent in balance between heat resistance and processing stability. The liquid crystal polyester resin comprises: a structural unit (I) derived from an aromatic hydroxycarboxylic acid; a structural unit (II) derived from an aromatic diol compound; and a structural unit (III) derived from an aromatic dicarboxylic acid, wherein the structural unit (I) contains a structural unit (IA) derived from 6-hydroxy-2-naphthoic acid, the structural unit (III) contains a structural unit (IIIA) derived from isophthalic acid and a structural unit (IIIB) derived from 2,6-naphthalenedicarboxylic acid, the dielectric tangent at a measurement frequency of 10 GHz is 1.50×10?3 or less, the melting point is 290° C. or more, and the difference in temperature between the melting point and the crystallization point is 30° C. or more.

Abstract: A printed wiring board includes: a board having a through-hole; a land portion that is disposed on an inner circumferential surface of the through-hole and on a surface of the board at a circumferential edge of the through-hole, and that has a through-hole conductor portion; and a wire that is disposed on the surface of the board and that has one longitudinal end portion electrically connected to the land portion, a maximum length of a connection portion between the wire and the land portion being greater than or equal to a sum of a maximum diameter of the through-hole and a minimum line width of the wire.

Abstract: A system that easily and stably separates various living cells of interest from a living body-derived tissue, the system including: a suspension unit that prepares a suspension by adding a proteolytic enzyme solution to a living body-derived tissue based on a parameter and shaking the tissue to which the solution has been added; a measurement unit that acquires information regarding the suspension; and an analysis unit that specifies a position of living cells from the information acquired by the measurement unit. Methods for separating various living cells of interest from a living body-derived tissue are also disclosed.

Abstract: A system that non-destructively and quickly determines a degree of senescence of cells to be cultured by utilizing the discovery that when cells are adhered to a surface of a culture substrate in a culture medium, the degree of cytoplasm spreading on the culture substrate is indicative of the degree of senescence. The degree of the spreading can be detected based on a result of brightness, reflectance, or image processing, and the degree of senescence is determined. It is also possible to determine the degree of senescence from a rate of the spread.

Abstract: A system that easily and stably separates various living cells from a living body-derived tissue, the system including: a mincing unit that minces the living body-derived tissue based on a parameter; a measurement unit that acquires information regarding the living body-derived tissue being minced; and an analysis unit that calculates a ratio of impurities to the living body-derived tissue being minced from the information acquired by the measurement unit. Methods for separating various living cells from a living body-derived tissue are also disclosed.

Abstract: According to one or more embodiments, a method for manufacturing a semiconductor device comprises forming a stacked film that comprises alternating first insulating layers and second insulating layers. A first insulating film, an electric charge storage layer, a second insulating film, and a first semiconductor layer are then formed in a hole in the stacked film. The method further includes forming a first recess in the stacked film, then supplying a first gas and a deuterium gas to the first recess. The first gas comprises hydrogen and oxygen.

Abstract: A composite includes a liquid crystal polyester that is soluble in a solvent; and liquid crystal polymer particles that are insoluble in a solvent, have a melting point of 270° C. or more, and have a cumulative distribution 50% diameter D50 of 20 ?m or less and a cumulative distribution 90% diameter D90 of 2.5 times or less the D50 in a particle size distribution.

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a gate electrode layer, and a first insulating layer provided between the semiconductor layer and the gate electrode layer, the first insulating layer including aluminum oxide including at least one crystal phase selected from the group consisting of alpha (?)-aluminum oxide and theta (?)-aluminum oxide, the first insulating layer having a thickness of equal to or less than 2.5 nm in a first direction from the semiconductor layer toward the gate electrode layer.

Abstract: A semiconductor storage device of an embodiment includes: a laminated body including electrode layers and insulating layers alternately stacked in a first direction; a semiconductor layer disposed in the laminated body; a first insulating film disposed between the laminated body and the semiconductor layer; a charge storage film disposed between the laminated body and the first insulating film, thicknesses of the charge storage film in a second direction crossing the first direction in the regions corresponding to the electrode layers being different from that in the regions corresponding to the insulating layers, the charge storage film comprising: a second insulating film disposed between the laminated body and the first insulating film, and a third insulating film disposed between the second insulating film and the regions corresponding to the electrode layers, the third insulating film having a density different from that of the second insulating film.

Abstract: A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.

Abstract: A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.

Abstract: A semiconductor memory device includes a stacked structure and a memory pillar. The stacked structure includes electrode layers and insulating layers alternately provided on a substrate. The memory pillar extends through the stacked structure in a thickness direction. The memory pillar includes a semiconductor layer extending along the thickness direction, and a first insulating film, a charge storage layer, and a second insulating film provided around the semiconductor layer. The charge storage layer contains fluorine, and a fluorine concentration in the charge storage layer has a gradient along a plane direction of the substrate with a peak. A first distance from an inner end of the charge storage layer to the peak in the plane direction is shorter than a second distance from an outer end of the charge storage layer to the peak in the plane direction.