Abstract: A viologen compound is a crystalline compound including a heterocyclic moiety in which a carboxylate of an alkali metal is bound directly or indirectly to both ends of a basic skeleton containing 4,4?-bipyridinium and an anionic moiety that pairs with 4,4?-bipyridinium. The viologen compound can be used, for example, as a negative electrode active material for an electricity storage device including a negative electrode containing the negative electrode active material, a positive electrode containing a positive electrode active material capable of giving and receiving anions, and an ion-conducting medium that is disposed between the positive electrode and the negative electrode and conducts anions.

Abstract: A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R103 represents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with sulfur atom in the formula; and L104 represents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.

Abstract: An electricity storage device 20 includes a positive electrode 22, a negative electrode 23 containing a layered structure of an aromatic dicarboxylic acid metal salt as an electrode active material, and an ion conducting medium 27 capable of conducting carrier ions. The layered structure is formed by spray-drying a solution prepared by containing aromatic dicarboxylic acid anions and alkali metal cations by using a spray-drying apparatus.

Abstract: The carbon porous body of the present disclosure includes micropores and mesopores. A micropore volume determined at a temperature of 77K by as plot analysis of a nitrogen adsorption isotherm is 100 (cm3 (STP)/g) or more. A BET specific surface area determined from the nitrogen adsorption isotherm is 1,000 m2/g or more. The derivative of the nitrogen adsorption isotherm is 300 (cm3 (STP)/g) or more over the range where relative pressure P/P0 in the nitrogen adsorption isotherm is from 0.10 to 0.20 inclusive, and the derivative of the nitrogen adsorption isotherm is 200 (cm3 (STP)/g) or more over the range where the relative pressure P/P0 in the nitrogen adsorption isotherm is from 0.20 to 0.95 inclusive. The amount of nitrogen adsorbed when the relative pressure P/P0 in the nitrogen adsorption isotherm is 0.98 is 1,200 (cm3 (STP)/g) or more.

Abstract: A viologen compound is a crystalline compound including a heterocyclic moiety in which a carboxylate of an alkali metal is bound directly or indirectly to both ends of a basic skeleton containing 4,4?-bipyridinium and an anionic moiety that pairs with 4,4?-bipyridinium. The viologen compound can be used, for example, as a negative electrode active material for an electricity storage device including a negative electrode containing the negative electrode active material, a positive electrode containing a positive electrode active material capable of giving and receiving anions, and an ion-conducting medium that is disposed between the positive electrode and the negative electrode and conducts anions.

Abstract: In an emigration control method, information on a passport-issue-allowed person and image data for specifying the person are stored in a storage. Image data for specifying a person who owns the passport to be inspected by an emigration inspection and information for specifying the passport-issue-allowed person are received. The passport-holding-person specifying image data is stored into an emigrant information storage in correspondence with the passport-issue-allowed person specifying information The passport-issue-allowed person specifying image data, the passport-issue-allowed person information, and the passport-holding-person specifying image data are extracted based upon the received passport-issue-allowed person specifying information.

Abstract: In one embodiment, a product distribution management system includes a product management center. The product management center includes a management device to receive product security data on a product from a distribution site and a product management database to store the data received from the distribution site for use in a product authentication process. The data includes product identification information and security information used to authenticate the product.

Abstract: In one embodiment, a product distribution management system includes a product management center. The product management center includes a management device to receive product security data on a product from a distribution site and a product management database to store the data received from the distribution site for use in a product authentication process. The data includes product identification information and security information used to authenticate the product.

Abstract: In one embodiment, a product distribution management system includes a product management center. The product management center includes a management device to receive product security data on a product from a distribution site and a product management database to store the data received from the distribution site for use in a product authentication process. The data includes product identification information and security information used to authenticate the product.

Abstract: An article management method and system effectively using characteristic information of an article, wherein identifiers are provided for an article and a slip associated with the article, and article information of the article, the article identifier, and slip identifier are transmitted to a destination of the article. At the destination, a processing method for the received article is determined according to the article information specified in accordance with the slip identifier of the slip received together with the article.

Abstract: In an emigration control method, information on a passport-issue-allowed person and image data for specifying the person are stored in a storage. Image data for specifying a person who owns the passport to be inspected by an emigration inspection and information for specifying the passport-issue-allowed person are received. The passport-holding-person specifying image data is stored into an emigrant information storage in correspondence with the passport-issue-allowed person specifying information. The passport-issue-allowed person specifying image data, the passport-issue-allowed person information, and the passport-holding-person specifying image data are extracted based upon the received passport-issue-allowed person specifying information. The passport-issue-allowed person specifying image data is identified with the passport-holding-person specifying image data.

Abstract: In one embodiment, a product distribution management system includes a product management center. The product management center includes a management device to receive product security data on a product from a distribution site and a product management database to store the data received from the distribution site for use in a product authentication process. The data includes product identification information and security information used to authenticate the product.

Abstract: A semiconductor integrated circuit device is described. The semiconductor device includes a switching signal generator having an output terminal which outputs a switching signal to change refresh modes. The semiconductor device also includes a first address buffer having an output terminal which outputs a first address signal, a second address buffer having an output terminal which outputs a second signal, a decoder having a first input terminal which receives the first address signal and having a second input terminal, a sense amplifier controller having an input terminal, and a switch having a first input terminal which receives the switching signal, a second input terminal which receives the second address signal, a first output terminal which outputs the second address signal to the second input terminal of the decoder and a second output terminal which outputs the second address signal to the input terminal of the sense amplifier controller, the switch being controlled by the switching signal.

Abstract: A semiconductor integrated circuit device capable of changing the product specification. The semiconductor integrated circuit device includes an integrated circuit section containing a first circuit section having a first function and a second circuit section having a second function, and an active signal generator means for producing an active signal for activating the first circuit section or the second circuit section. To change the product specification, the integrated circuit device further includes a receiving for taking in a decision signal for determining the product specification a, switching signal generator, connected to the receiving device, for producing a switching signal for changing the product specification based on the decision signal, and switching device which receives the active signal and the switching signal, and which, based on the switching signal, changes the supply of the active signal to either the first circuit section or to the second circuit section.

Abstract: A semiconductor memory device includes a buffer for outputting an address signal and a decoding circuit having an input for receiving the address signal. A switch electrically connects the buffer to the input of the decoding circuit if a refresh mode specifying signal specifies a first data refresh mode, and electrically disconnects the buffer from the input of the decoding circuit if the refresh mode specifying signal specifies a second data refresh mode different from the first data refresh mode. An activating/deactivating circuit activates the input of the decoding circuit if the refresh mode specifying signal specifies the first data refresh mode and deactivates the input of the decoding circuit if the refresh mode specifying signal specifies the second data refresh mode.

Abstract: A semiconductor device comprises an N-type semiconductor substrate, a first P-type well formed in the semiconductor substrate, a second P-type well formed adjacent to the first P-type well in the semiconductor substrate, the surface impurity concentration of the second P-type well being set lower than that of the first P-type well, a DRAM memory cell structure formed in the first P-type well, and an MOS transistor structure formed in the second P-type well to function in combination with the memory cell structure.

Abstract: In a dynamic type memory, a memory cell array is divided into a plurality of sub arrays on a memory chip. Each of the sub arrays is provided with a data line formed in parallel with word lines. Data buffer and multiplexer circuits and I/O pads are arranged on one side of the memory chip in parallel with bit lines. This arrangement allows a data path to be shortened and enables data to be transferred at high speed.

Abstract: A dynamic memory comprises a control circuit for controlling the selection of the row decoder and the activation of the sense amplifiers in accordance with a RAS signal externally supplied thereto and a word line control circuit for controlling a selected word line to turn the electric potentials read out from the memory cells connected to the word line on the bit lines connected to the respective memory cells back to an inactive level after the electric potentials are sensed and amplified by the sense amplifiers corresponding to the respective bit lines during the time period from the time when the RAS signal is turned to an active level and the time when it is turned back to the inactive level. A dynamic memory has gate oxide films are designed to be subjected to a less electric field strength in order to minimize the degradation of reliability and the memory can effectively reduce the fall of the word line driving stepped-up voltage to eliminate the necessity of a leak current compensation circuit.

Abstract: A semiconductor integrated circuit device capable of changing the product specification. The semiconductor integrated circuit device comprises an integrated circuit section containing a first circuit section having a first function and a second circuit section having a second function, and active signal generator means for producing an active signal for activating the first circuit section or the second circuit section. To change the product specification, the integrated circuit device further comprises receiving means for taking in a decision signal for determining the product specification, switching signal generator means, connected to the receiving means, for producing a switching signal for changing the product specification based on the decision signal, and switching means which receives the active signal and the switching signal, and which, based on the switching signal, changes the supply of the active signal to either the first circuit section or to the second circuit section.

Abstract: In a dynamic type memory, a memory cell array is divided into a plurality of sub arrays on a memory chip. Each of the sub arrays is provided with a data line formed in parallel with word lines. Data buffer and multiplexer circuits and I/O pads are arranged on one side of the memory chip in parallel with bit lines. This arrangement allows a data path to be shortened and enables data to be transferred at high speed.