Abstract: A satellite communication system includes a plurality of earth station apparatuses and a control earth station apparatus, the plurality of earth station apparatuses each accommodating a terminal apparatus that establishes a session by using a control message being dedicated to perform communication, the control earth station apparatus transmitting and/or receiving a control signal on a controlling line to an earth station apparatus of the plurality of earth station apparatuses via a relay satellite, and the satellite communication system performing circuit-switching of a communicating line between the plurality of earth station apparatuses that are connected by single-hop connection to allow a plurality of the terminal apparatuses to perform communication with each other.

Abstract: A satellite communication system communicates via a communication satellite using one of a plurality of portable station devices as a master station device and another portable station device as a slave station device. The master station device transmits a first control signal for the slave station device to establish synchronization. The master station device determines that the slave station device is in a communicable state by a second control signal received from the slave station device that has received the first control signal and established synchronization. The master station device selects one of at least one slave station devices in a communicable state and transmits a third control signal for instructing start of transmission of a communication signal to the selected slave station device and the subject device. Due to this, it is possible to connect a channel between portable station devices without the intervention of a control station device or a regulation station device.

Abstract: In a band sharing communication system in which there are a primary system and a secondary system in descending order of priority of communication, the systems share frequency bands, and a base station or a line control device performs allocation of a requested band of a terminal station of each system, the base station or the line control device including: occupied band setting means for setting a primary occupied band and a secondary occupied band adjacent to the primary occupied band; band allocation means for allocating a vacant band of the primary occupied band with respect to a requested band of a primary terminal station and allocating a vacant band of the secondary occupied band with respect to a requested band of a secondary terminal station; and band transferring means for, when there is no vacant band in the primary occupied band with respect to a requested band of the primary terminal station, transferring a band of the secondary occupied band from the secondary occupied band to the primary occupi

Abstract: In a band sharing communication system in which there are a primary system and a secondary system in descending order of priority of communication, the systems share frequency bands, and a base station or a line control device performs allocation of a requested band of a terminal station of each system, the base station or the line control device includes: occupied band setting means for setting a primary occupied band and a secondary occupied band adjacent to the primary occupied band; band allocation means for allocating a vacant band of the primary occupied band with respect to a requested band of a primary terminal station and allocating a vacant band of the secondary occupied band with respect to a requested band of a secondary terminal station; and band transferring means for, when there is no vacant band in the primary occupied band with respect to the requested band of the primary terminal station, if a vacant band equivalent to the requested band is present in the secondary occupied band such that th

Abstract: A band sharing communication system in which there are an N-ary system and an N+1-ary system in descending order of priority of communication, the systems share frequency bands and allocation of a requested band of a terminal station of each system is performed, includes: occupied band setting means for setting an N-ary occupied band and an N+1-ary occupied band adjacent to the N-ary occupied band; band allocation means for allocating a vacant band of the N-ary occupied band with respect to a requested band of an N-ary terminal station and allocating a vacant band of the N+1-ary occupied band with respect to a requested band of an N+1-ary terminal station; and band transferring means for, when there is no vacant band in the N-ary occupied band with respect to the requested band of the N-ary terminal station, if a vacant band equivalent to the requested band is present in the N+1-ary occupied band such that the vacant band is adjacent to the N-ary occupied band, transferring the vacant band from the N+1-ary oc

Abstract: A second protective member has a slit for exposing a lead wiring member from a solar cell panel. A terminal box is connected to the lead wiring member from the slit in the second protective member. A bonding member bonds the terminal box and the second protective member. A peripheral portion around the slit in the second protective member projects farther than a non-peripheral portion other than the peripheral portion. The bonding member is provided in the non-peripheral portion in the second protective member.

Abstract: A solar cell has multiple busbar electrodes formed at intervals and multiple finger electrodes formed between the busbar electrodes. The finger electrodes comprise multiple finger parts connected only to one busbar electrode and multiple finger parts connected to only another busbar electrode. The adjacent multiple finger parts are connected to one another, and the adjacent multiple finger parts are connected to one another.

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: A solar cell has multiple busbar electrodes formed at intervals and multiple finger electrodes formed between the busbar electrodes. The finger electrodes comprise multiple finger parts connected only to one busbar electrode and multiple finger parts connected to only another busbar electrode. The adjacent multiple finger parts are connected to one another, and the adjacent multiple finger parts are connected to one another.

Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.

Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.

Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.

Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).

Abstract: A manufacturing method for a solar cell having improved output characteristics is provided. After forming a p-side transparent conductive oxide layer (15), an n-side transparent conductive oxide layer (16) is formed.

Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.

Abstract: In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.