Patents by Inventor Masaki Shima

Masaki Shima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190221680
    Abstract: A second protective member has a slit for exposing a lead wiring member from a solar cell panel. A terminal box is connected to the lead wiring member from the slit in the second protective member. A bonding member bonds the terminal box and the second protective member. A peripheral portion around the slit in the second protective member projects farther than a non-peripheral portion other than the peripheral portion. The bonding member is provided in the non-peripheral portion in the second protective member.
    Type: Application
    Filed: March 28, 2019
    Publication date: July 18, 2019
    Inventors: Toshiyuki SAKUMA, Ryoji NAITO, Kengo MATSUNE, Masaki SHIMA, Hiroyuki KANNOU
  • Patent number: 10269992
    Abstract: A solar cell has multiple busbar electrodes formed at intervals and multiple finger electrodes formed between the busbar electrodes. The finger electrodes comprise multiple finger parts connected only to one busbar electrode and multiple finger parts connected to only another busbar electrode. The adjacent multiple finger parts are connected to one another, and the adjacent multiple finger parts are connected to one another.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: April 23, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Hironobu Tsujimoto, Naohiro Hitachi, Masaki Shima, Toshie Kunii, Shingo Okamoto
  • Patent number: 10014432
    Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: July 3, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tomonori Ueyama, Motohide Kai, Masaki Shima
  • Patent number: 9818904
    Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: November 14, 2017
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Masaki Shima, Shinji Kobayashi
  • Publication number: 20160181461
    Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).
    Type: Application
    Filed: February 25, 2016
    Publication date: June 23, 2016
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tomonori UEYAMA, Motohide KAI, Masaki SHIMA
  • Publication number: 20150263194
    Abstract: A solar cell has multiple busbar electrodes formed at intervals and multiple finger electrodes formed between the busbar electrodes. The finger electrodes comprise multiple finger parts connected only to one busbar electrode and multiple finger parts connected to only another busbar electrode. The adjacent multiple finger parts are connected to one another, and the adjacent multiple finger parts are connected to one another.
    Type: Application
    Filed: May 29, 2015
    Publication date: September 17, 2015
    Inventors: Hironobu TSUJIMOTO, Naohiro HITACHI, Masaki SHIMA, Toshie KUNII, Shingo OKAMOTO
  • Publication number: 20150125986
    Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.
    Type: Application
    Filed: January 7, 2015
    Publication date: May 7, 2015
    Inventors: Masaki SHIMA, Shinji KOBAYASHI
  • Patent number: 8957351
    Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: February 17, 2015
    Assignees: SANYO Electric Co., Ltd., ULVAC, Inc.
    Inventors: Masaki Shima, Yoshinori Wakamiya, Shuji Osono, Satohiro Okayama, Hideyuki Ogata
  • Patent number: 8835196
    Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: September 16, 2014
    Assignee: SANYO Electric Co., Ltd.
    Inventor: Masaki Shima
  • Patent number: 8835210
    Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: September 16, 2014
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Takuo Nakai, Naoki Yoshimura, Masaki Shima
  • Publication number: 20140162394
    Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).
    Type: Application
    Filed: November 26, 2013
    Publication date: June 12, 2014
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Motohide Kai, Tomonori Ueyama, Masaki Shima
  • Publication number: 20140080246
    Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).
    Type: Application
    Filed: November 27, 2013
    Publication date: March 20, 2014
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Takuo Nakai, Naoki Yoshimura, Masaki Shima
  • Publication number: 20140073083
    Abstract: A manufacturing method for a solar cell having improved output characteristics is provided. After forming a p-side transparent conductive oxide layer (15), an n-side transparent conductive oxide layer (16) is formed.
    Type: Application
    Filed: November 21, 2013
    Publication date: March 13, 2014
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Masaki Shima, Yoshihiro Matsubara
  • Publication number: 20140017849
    Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.
    Type: Application
    Filed: September 17, 2013
    Publication date: January 16, 2014
    Applicant: Sanyo Electric Co., Ltd.
    Inventor: Masaki Shima
  • Patent number: 8513047
    Abstract: In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: August 20, 2013
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Hiroyuki Kannou, Masaki Shima
  • Patent number: 8389320
    Abstract: In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: March 5, 2013
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Hiroyuki Kannou, Masaki Shima
  • Patent number: 8383927
    Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: February 26, 2013
    Assignee: SANYO Electric Co., Ltd.
    Inventors: Masaki Shima, Kunimoto Ninomiya
  • Patent number: 8263859
    Abstract: An aspect of the present invention provides a stacked photovoltaic device that comprises a first power generating unit including a first semiconductor layer made of a substantially intrinsic non-single crystal semiconductor layer which functions as a photoelectric conversion layer; and a second power generating unit formed above the first power generating unit, the second power generating unit including a second semiconductor layer made of a substantially intrinsic non-crystalline semiconductor layer which functions as a photoelectric conversion layer. In the stacked photovoltaic device, a first density of an element mainly constituting the first semiconductor layer of the first power generating unit is lower than a second density of an element mainly constituting the second semiconductor layer of the second power generating unit.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: September 11, 2012
    Assignee: SANYO Electric Co., Ltd.
    Inventor: Masaki Shima
  • Publication number: 20120190149
    Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.
    Type: Application
    Filed: March 30, 2012
    Publication date: July 26, 2012
    Applicants: ULVAC, INC., SANYO ELECTRIC CO., LTD.
    Inventors: Masaki SHIMA, Yoshinori WAKAMIYA, Shuji OSONO, Satohiro OKAYAMA, Hideyuki OGATA
  • Publication number: 20120060893
    Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.
    Type: Application
    Filed: November 18, 2011
    Publication date: March 15, 2012
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Masaki SHIMA, Kunimoto NINOMIYA