Abstract: A second protective member has a slit for exposing a lead wiring member from a solar cell panel. A terminal box is connected to the lead wiring member from the slit in the second protective member. A bonding member bonds the terminal box and the second protective member. A peripheral portion around the slit in the second protective member projects farther than a non-peripheral portion other than the peripheral portion. The bonding member is provided in the non-peripheral portion in the second protective member.

Abstract: A solar cell has multiple busbar electrodes formed at intervals and multiple finger electrodes formed between the busbar electrodes. The finger electrodes comprise multiple finger parts connected only to one busbar electrode and multiple finger parts connected to only another busbar electrode. The adjacent multiple finger parts are connected to one another, and the adjacent multiple finger parts are connected to one another.

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: A solar cell has multiple busbar electrodes formed at intervals and multiple finger electrodes formed between the busbar electrodes. The finger electrodes comprise multiple finger parts connected only to one busbar electrode and multiple finger parts connected to only another busbar electrode. The adjacent multiple finger parts are connected to one another, and the adjacent multiple finger parts are connected to one another.

Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.

Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.

Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.

Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).

Abstract: A manufacturing method for a solar cell having improved output characteristics is provided. After forming a p-side transparent conductive oxide layer (15), an n-side transparent conductive oxide layer (16) is formed.

Abstract: The purpose of the present invention is to favorably modify a transparent conductive film and provide a transparent conductive film with few grain boundaries. In the manufacturing method for the transparent conductive film of the present invention, a transparent conductive film 3 is formed on a substrate 2 inside a vacuum chamber 10, after which radiant heat is imparted from a surface modifying device 4 arranged near the substrate 2 to modify the transparent conductive film 3, and the substrate 2 having the modified transparent conductive film 3 is removed from the vacuum chamber 10.

Abstract: In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.

Abstract: In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.

Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.

Abstract: An aspect of the present invention provides a stacked photovoltaic device that comprises a first power generating unit including a first semiconductor layer made of a substantially intrinsic non-single crystal semiconductor layer which functions as a photoelectric conversion layer; and a second power generating unit formed above the first power generating unit, the second power generating unit including a second semiconductor layer made of a substantially intrinsic non-crystalline semiconductor layer which functions as a photoelectric conversion layer. In the stacked photovoltaic device, a first density of an element mainly constituting the first semiconductor layer of the first power generating unit is lower than a second density of an element mainly constituting the second semiconductor layer of the second power generating unit.

Abstract: In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate.

Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.