Patents by Inventor Masaki Tsuji

Masaki Tsuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210111189
    Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.
    Type: Application
    Filed: December 21, 2020
    Publication date: April 15, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Takashi ISHIDA, Yoshiaki FUKUZUMI, Takayuki OKADA, Masaki TSUJI
  • Patent number: 10916562
    Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: February 9, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Takashi Ishida, Yoshiaki Fukuzumi, Takayuki Okada, Masaki Tsuji
  • Publication number: 20200357820
    Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.
    Type: Application
    Filed: July 28, 2020
    Publication date: November 12, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Masaki TSUJI, Yoshiaki FUKUZUMI
  • Publication number: 20200335517
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Application
    Filed: July 1, 2020
    Publication date: October 22, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Yoshiaki FUKUZUMI, Shinya ARAI, Masaki TSUJI, Hideaki AOCHI, Hiroyasu TANAKA
  • Publication number: 20200285086
    Abstract: A light control unit including a light control sheet which includes a light control layer and is to be bonded to a surface of a transparent plate having an edge portion to be held in a window frame, and a buffer member including a portion that has a higher indentation hardness and a larger thickness than the light control sheet. The buffer member is to be positioned outside an edge of the light control sheet in the edge portion of the transparent plate on the surface such that the buffer member makes contact with the window frame when the edge portion of the transparent plate is held in the window frame.
    Type: Application
    Filed: May 22, 2020
    Publication date: September 10, 2020
    Applicant: TOPPAN PRINTING CO.,LTD.
    Inventor: Masaki Tsuji
  • Patent number: 10763279
    Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.
    Type: Grant
    Filed: March 21, 2019
    Date of Patent: September 1, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Masaki Tsuji, Yoshiaki Fukuzumi
  • Patent number: 10741583
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: August 11, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
  • Publication number: 20200043944
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Application
    Filed: October 9, 2019
    Publication date: February 6, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Yoshiaki FUKUZUMI, Shinya ARAI, Masaki TSUJI, Hideaki AOCHI, Hiroyasu TANAKA
  • Patent number: 10497717
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: December 3, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
  • Publication number: 20190267398
    Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.
    Type: Application
    Filed: May 14, 2019
    Publication date: August 29, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Takashi ISHIDA, Yoshiaki FUKUZUMI, Takayuki OKADA, Masaki TSUJI
  • Publication number: 20190221578
    Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.
    Type: Application
    Filed: March 21, 2019
    Publication date: July 18, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Masaki Tsuji, Yoshiaki Fukuzumi
  • Patent number: 10340285
    Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: July 2, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Takashi Ishida, Yoshiaki Fukuzumi, Takayuki Okada, Masaki Tsuji
  • Patent number: 10283525
    Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: May 7, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masaki Tsuji, Yoshiaki Fukuzumi
  • Patent number: 10224240
    Abstract: A first tier structure is provided by forming first memory openings through a first alternating stack of first insulating layers and first spacer layers, and by forming sacrificial memory opening fill structures in the first memory openings. A second tier structure is formed over the first tier structure by forming a second alternating stack of second insulating layers and second spacer layers. Second memory openings are formed through the second tier structure in areas of the sacrificial memory opening fill structures. Distortion of the first tier structure and misalignment between the first and second memory openings is reduced or prevented by conducting thermal cycles at a lower temperature for the second tier structure than for the first tier structure.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: March 5, 2019
    Assignees: SANDISK TECHNOLOGIES LLC, TOSHIBA MEMORY CORPORATION
    Inventors: Kota Funayama, Masayuki Fukai, Takaya Yamanaka, Masaki Tsuji, Akira Matsumura
  • Publication number: 20190027494
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Application
    Filed: September 21, 2018
    Publication date: January 24, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Yoshiaki FUKUZUMI, Shinya ARAI, Masaki TSUJI, Hideaki AOCHI, Hiroyasu TANAKA
  • Patent number: 10115733
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: October 30, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
  • Publication number: 20180286882
    Abstract: According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.
    Type: Application
    Filed: June 1, 2018
    Publication date: October 4, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Masaki TSUJI, Yoshiaki FUKUZUMI
  • Patent number: D828466
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: September 11, 2018
    Assignee: SANRIO COMPANY, LTD.
    Inventor: Masaki Tsuji
  • Patent number: D832377
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: October 30, 2018
    Assignee: SANRIO COMPANY, LTD.
    Inventor: Masaki Tsuji
  • Patent number: D832378
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: October 30, 2018
    Assignee: SANRIO COMPANY, LTD.
    Inventors: Masaki Tsuji, Yumiko Muramoto