Abstract: A period required for a time-consuming cross-contamination test is cut down or omitted, and a burden imposed on the customer by the costs of samples, reagents, etc. used in the test are reduced. A data failure caused by cross-contamination can be efficiently prevented. A maintenance service office establishes a connection via a communication line between a computer installed in the maintenance service office for maintenance of automatic analyzers and a customer's automatic analyzer or a personal computer placed in a customer's facility. The maintenance service office receives information regarding cross-contamination from reagent manufacturers and other customers (such as clinical examination rooms or centers) and validates it. The validated information is transmitted from the maintenance service office to the customer's automatic analyzer or personal computer via the communication line.

Abstract: It is aimed to prevent electrical charging inside a resin material as well as a surface of a resin vessel at a time of sterilizing the resin vessel by being irradiated with electron beam. A bottle support unit is mounted to a lower end portion of a cylindrical rotating shaft rotatably supported by a rotating wheel. The bottle support unit includes a pair of griper members by which a mouth portion of a bottle is gripped. The bottle rotated and conveyed in a state supported by the bottle support unit is irradiated with the electron beam from an electron beam irradiator to thereby sterilize the bottle. A ground electrode is disposed to be capable of being inserted into the interior of the resin vessel through a mouth portion thereof, and the interior of the resin vessel is irradiated with the electron beam in a state of the ground electrode being inserted into the resin vessel.

Abstract: A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.

Abstract: In this game system, a plurality of game devices are connected to a game parent station over a communication network, and an online game application may be executed on the game devices by means of the game parent station. In this game system, the game devices are provided with a personal information processing means that can exchange personal information with other players while the online game application is executed among the game devices. Therefore, personal information in the form of a business card may be exchanged with an opponent by means of the personal information processing means either after a game has ended or when a game begins.

Abstract: There is provided a liquid crystal display device having a pixel electrode including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds the both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between the both substrates over the gap retaining pad and over the pixel electrode.

Abstract: The TFT substrate having a transparent conductive film pattern configuring a terminal that can be connected from outside and a first line extending from the terminal; a metal film that is removed from over the terminal and formed on the transparent conductive film pattern on the inside thereof; and an insulating film covering the metal film.

Abstract: The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film.

Abstract: A method of manufacturing a transflective type liquid crystal display device includes forming an organic film having different film thicknesses on a passivation film covering a TFT, etching the passivation film to form a contact hole, etching a reflective electrode and a transmissive electrode formed on the organic film by using a resist pattern having different film thicknesses, removing, by ashing, a thin film portion of the resist pattern, and a thin film portion of the organic film exposed from the transmissive electrode to form an opening, etching the reflective electrode by using the resist pattern left after the removal of the thin film portion, and bonding substrates in such a manner that a sealing material in a shape of a frame is arranged in the opening of the organic film.

Abstract: The present invention provides a laminated conductive film, comprising a transparent conductive film and Al-based film, that is capable of realizing a high-quality film with superior electro-optical properties, without providing a buffer layer or protective layer. A laminated conductive film according to one aspect of the present invention is provided with a transparent conductive film having optical transmissivity, and a metal conductive film laminated directly on the transparent conductive film and electrically connected to the transparent conductive film. The metal conductive film is made of Al or has Al as a main component thereof and contains at least one of nitrogen atom and oxygen atom at least in the vicinity of the interface with the transparent conductive film.

Abstract: For a photosensor, an array substrate is provided, wherein the edge of a photodiode is enclosed by the opening edge of a contact hole formed on a drain electrode.

Abstract: A method of manufacturing a multilayer thin film pattern includes forming a metal film over a substrate, forming a second thin film over the metal film, forming a resist pattern over the second thin film, etching the second thin film using the resist pattern as a mask, transforming the resist pattern using an organic solvent or a RELACS agent to cover an edge face of the etched second thin film and etching the metal film while the edge face of the second thin film is covered with the resist pattern.

Abstract: In this game system, a plurality of game devices 1 are connected to a game parent station 7 over a communication network 3, and an online game application may be executed on the game devices 1 by means of the game parent station 7. In this game system, the game devices 1 are provided with a personal information processing means 10 that can exchange personal information with other players while the online game application is executed among the game devices 1. Therefore, personal information in the form of a business card may be exchanged with an opponent by means of the personal information processing means 10 either after a game has ended or when a game begins.

Abstract: In this game system, a plurality of game devices 1 are connected to a game parent station 7 over a communication network 3, and an online game application may be executed on the game devices 1 by means of the game parent station 7. In this game system, the game devices 1 are provided with a personal information processing means 10 that can exchange personal information with other players while the online game application is executed among the game devices 1. Therefore, personal information in the form of a business card may be exchanged with an opponent by means of the personal information processing means 10 either after a game has ended or when a game begins.

Abstract: A highly reliable semiconductor device is provided. The semiconductor device is provided with a thin film field-effect transistor having a channel region and includes a substrate and a semiconductor film. The semiconductor film is formed on the substrate and includes the channel region of the thin film field-effect transistor. An upper surface of the semiconductor film is planarized by removing a surface layer of the semiconductor film.

Abstract: A method of manufacturing a semiconductor device including: forming a semiconductor film on a substrate; forming an insulating film on the semiconductor film; forming a conductive film on the insulating film; forming a resist film, which has a sidewall, on the conductive film; forming a gate electrode which has a sidewall inside of the sidewall of the resist film by partially removing the conductive film by etching, using the resist film as a mask; forming a gate insulating film which includes an extended part having a sidewall positioned beyond the sidewall of the gate electrode by partially removing the insulating film by etching, using the resist film as a mask; forming high impurity concentration source and drain regions in regions of the semiconductor film spaced apart from the sidewall of said extended part by injecting impurities into the semiconductor film, using the resist film as a mask; removing the resist film; and forming, after removing the resist film, low impurity concentration regions in the

Abstract: A period required for a time-consuming cross-contamination test is cut down or omitted, and a burden imposed on the customer by the costs of samples, reagents, etc. used in the test are reduced. A data failure caused by cross-contamination can be efficiently prevented. A maintenance service office establishes a connection via a communication line between a computer installed in the maintenance service office for maintenance of automatic analyzers and a customer's automatic analyzer or a personal computer placed in a customer's facility. The maintenance service office receives information regarding cross-contamination from reagent manufacturers and other customers (such as clinical examination rooms or centers) and validates it. The validated information is transmitted from the maintenance service office to the customer's automatic analyzer or personal computer via the communication line.

Abstract: A semiconductor device with a high reliability can be gained. The semiconductor device includes a substrate, a semiconductor layer, a gate insulating film and a gate electrode. The semiconductor layer is formed on the main surface of the substrate and includes source and drain regions adjoining each other via a channel region. The gate insulating film is formed on the channel region. The gate electrode is formed on the gate insulating film and has a sidewall. The gate insulating film includes an extended part which has sidewall positioned outside of the sidewall of the gate electrode. The source and the drain regions include high concentration impurity region which is formed in a region of the semiconductor layer apart from the sidewall of the extended part and low concentration impurity region, and which is formed in a region of the semiconductor layer positioned beneath the extended part.

Abstract: A semiconductor device with a high reliability can be gained. The semiconductor device includes a substrate, a semiconductor layer, a gate insulating film and a gate electrode. The semiconductor layer is formed on the main surface of the substrate and includes source and drain regions adjoining each other via a channel region. The gate insulating film is formed on the channel region. The gate electrode is formed on the gate insulating film and has a sidewall. The gate insulating film includes an extended part which has sidewall positioned outside of the sidewall of the gate electrode. The source and the drain regions include high concentration impurity region which is formed in a region of the semiconductor layer apart from the sidewall of the extended part and low concentration impurity region, and which is formed in a region of the semiconductor layer positioned beneath the extended part.

Abstract: A highly reliable semiconductor device is provided. The semiconductor device is provided with a thin film field-effect transistor having a channel region and includes a substrate and a semiconductor film. The semiconductor film is formed on the substrate and includes the channel region of the thin film field-effect transistor. An upper surface of the semiconductor film is planarized by removing a surface layer of the semiconductor film.

Abstract: To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.