Patents by Inventor Masami Ishiura

Masami Ishiura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10326257
    Abstract: A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: June 18, 2019
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Masami Ishiura
  • Patent number: 10290998
    Abstract: A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: May 14, 2019
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Masami Ishiura
  • Publication number: 20180212400
    Abstract: A process of forming a semiconductor optical device is disclosed. The semiconductor optical device provides a waveguide structure accompanied with a heater for varying a temperature of the waveguide structure. The process includes steps of: (a) forming a striped mask on a semiconductor substrate; (b) selectively growing a dummy layer on the semiconductor substrate; (c) removing the patterned mask; (d) burying the dummy layer by a supplemental layer; (e) exposing a portion of the dummy layer by etching a portion of the supplemental layer; (f) and removing the dummy layer by immersing the dummy layer within a solution that shows an etching rate for the dummy layer enough faster than an etching rate for the supplemental layer and the substrate so as to leave a void in a region the dummy layer had existed.
    Type: Application
    Filed: January 22, 2018
    Publication date: July 26, 2018
    Inventors: Toshimitsu Kaneko, Takuya Fujii, Masami Ishiura, Taro Hasegawa, Toshiyuki Taguchi
  • Publication number: 20180076596
    Abstract: A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
    Type: Application
    Filed: October 13, 2017
    Publication date: March 15, 2018
    Inventor: Masami Ishiura
  • Patent number: 9800021
    Abstract: A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: October 24, 2017
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Masami Ishiura
  • Patent number: 9577142
    Abstract: A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: February 21, 2017
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Masami Ishiura
  • Publication number: 20160126700
    Abstract: A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.
    Type: Application
    Filed: October 29, 2015
    Publication date: May 5, 2016
    Inventor: Masami Ishiura
  • Patent number: 9331456
    Abstract: A method of manufacturing a semiconductor laser according to an aspect of the present invention includes (a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100), (b) forming a plurality of growth start surfaces having a plane index greater than (100) in an upper surface of the second cladding layer, and (c) epitaxially growing a third cladding layer containing zinc in the plurality of growth start surfaces of the second cladding layer.
    Type: Grant
    Filed: July 29, 2014
    Date of Patent: May 3, 2016
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Masami Ishiura
  • Publication number: 20150311674
    Abstract: A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
    Type: Application
    Filed: April 24, 2015
    Publication date: October 29, 2015
    Inventor: Masami ISHIURA
  • Publication number: 20150037919
    Abstract: A method of manufacturing a semiconductor laser according to an aspect of the present invention includes (a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100), (b) forming a plurality of growth start surfaces having a plane index greater than (100) in an upper surface of the second cladding layer, and (c) epitaxially growing a third cladding layer containing zinc in the plurality of growth start surfaces of the second cladding layer.
    Type: Application
    Filed: July 29, 2014
    Publication date: February 5, 2015
    Inventor: Masami ISHIURA
  • Publication number: 20100297796
    Abstract: A method for manufacturing a semiconductor device including growing an InAlGaAsP layer having a thickness of 1.0 ?m or more on a surface of an InP semiconductor layer at a growth temperature of 680 degrees C. or more, a composition ratio “X” of Ga in InAlGa of the InAlGaAsP being 0?X?0.08.
    Type: Application
    Filed: August 4, 2010
    Publication date: November 25, 2010
    Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventors: Masami Ishiura, Takuya Fujii