Abstract: A magnetic-balance-system current sensor includes: a magnetoresistive element, a resistance value of the magnetoresistive element being changed by applying an induction magnetic field generated by a measurement target current; magnetic cores disposed near the magnetoresistive element; a feedback coil disposed near the magnetoresistive element and configured to generate a cancelling magnetic field that cancels out the induction magnetic field; and a magnetic-field detecting bridge circuit having two outputs. The measurement target current is measured on the basis of a current flowing through the feedback coil when the induction magnetic field and the induction magnetic field and the cancelling magnetic field cancel each other out. The feedback coil, the magnetic cores, and the magnetic-field detecting bridge circuit are formed on a same substrate. The feedback coil is of a spiral type, and the magnetic cores are provided above and below the feedback coil.

Abstract: A current sensor including a magnetic detecting bridge circuit which is constituted of four magneto-resistance effect elements with a resistance value varied by application of an induced magnetic field from a current to be measured, and which has an output between two magneto-resistance effect elements. The four magneto-resistance effect elements have the same resistance change rate, and include a self-pinned type ferromagnetic fixed layer which is formed by anti-ferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film via an antiparallel coupling film therebetween, a nonmagnetic intermediate layer, and a soft magnetic free layer. Magnetization directions of the ferromagnetic fixed layers of the two magneto-resistance effect elements providing the output are different from each other by 180°. The magnetic detecting bridge circuit has wiring symmetrical to a power supply point.

Abstract: A magnetic sensor includes a magnetoresistance effect element and a hard bias layer. The magnetoresistance effect element is configured to have a striped form which has a sensitivity axis in a predetermined direction, and configured to have a structure in which a free magnetic layer, in which magnetization varies with respect to an external magnetic field, a non-magnetic layer, and a fixed magnetic layer, in which the magnetization is fixed, are laminated. The hard bias layer is disposed in a longitudinal direction of the striped form, disposed outside of the magnetoresistance effect element to be separated from the magnetoresistance effect element.

Abstract: A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 ?m.

Abstract: A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer.

Abstract: A current sensor includes a magnetic detecting element, a bridge circuit including a plurality of resistance elements, and a feedback coil placed adjacent to the magnetic detecting element and generating a cancelling magnetic field for cancelling the induced magnetic field based on the output from the bridge circuit. The wiring patterns forming the bridge circuit are routed so as not to intersect with each other when seen in a plan view. Only the resistance elements constituting each series circuit of the bridge circuit are connected to each other by the wiring pattern in an enclosed area which encloses each resistance element constituting the bridge circuit, and the wiring pattern branched from the wiring pattern is connected to the terminal which is installed in a quantity of only one, outside the enclosed area.

Abstract: A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer.

Abstract: A magnetism sensor comprises a magnetoresistive element, the resistance of which changes due to the application of an induced magnetic field from the current being measured, and a fixed-resistance element. The fixed-resistance element has a self-pinned ferromagnetic fixed layer comprising a first ferromagnetic film and a second ferromagnetic film coupled antiferromagnetically with an antiparallel coupling film interposed therebetween. The antiparallel coupling film is a ruthenium film that exhibits an antiferromagnetic coupling effect with a first peak thickness. The difference between the degrees of magnetization of the first ferromagnetic film and the second ferromagnetic film is effectively zero.

Abstract: A magnetic balance type current sensor of the present invention includes a magnetic field detection bridge circuit including four magnetoresistance effect elements whose resistance values change owing to application of an induction magnetic field from a current to be measured. Each of the four magnetoresistance effect elements includes a ferromagnetic fixed layer formed by causing a first ferromagnetic film and a second ferromagnetic film to be antiferromagnetically coupled to each other via an antiparallel coupling film, a non-magnetic intermediate layer, and a soft magnetic free layer.

Abstract: A magnetic balance type current sensor measures a measured current which flows in a feedback coil when electrical conduction is provided by a voltage difference according to an induction magnetic field from the measured current and an equilibrium state is reached in which the induction magnetic field and a cancel magnetic field cancel each other. Sensor elements in a pair are arranged at positions with magnetic field from the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of one sensor element is aligned in a forward direction with respect to the magnetic field formed by the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of the other sensor element is aligned in a reverse direction with respect to the magnetic field formed by the measured current.

Abstract: Magnetoresistive effect elements R1 to R4 are a TMR element or CPP-GMR element. A multilayer film forming the magnetoresistive effect elements is formed to have a width dimension T1 and a length dimension L1 perpendicular to the width dimension T1. The length dimension L1 is longer than the width dimension T1. The width dimension of magnetic field generators of the coil is T2. The multilayer film 31 is positioned within the width dimension T3 of 60% in total of 30% each to the width dimension T2 of the magnetic field generators 3 and 4 of the coil in the direction towards both sides from the center of the width dimension T2 when seen in a plan view.

Abstract: A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view; and a third shield film disposed to surround the magnetoresistive element.

Abstract: A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

Abstract: A magnetic balance type current sensor includes a magnetoresistance effect element whose resistance value changes owing to the application of an induction magnetic field from a current to be measured; a feedback coil disposed in the vicinity of the magnetoresistance effect element and generating a cancelling magnetic field cancelling out the induction magnetic field; a magnetic field detection bridge circuit including two outputs causing a voltage difference corresponding to the induction magnetic field to occur; and a magnetic shield attenuating the induction magnetic field and enhancing the cancelling magnetic field, wherein, on the basis of the current flowing through the feedback coil at the time of an equilibrium state in which the induction magnetic field and the cancelling magnetic field are cancelled out, the current to be measured is measured, wherein the feedback coil, the magnetic shield, and the magnetic field detection bridge circuit are formed on a same substrate.

Abstract: A magnetic-balance-system current sensor includes: a magnetoresistive element, a resistance value of the magnetoresistive element being changed by applying an induction magnetic field generated by a measurement target current; magnetic cores disposed near the magnetoresistive element; a feedback coil disposed near the magnetoresistive element and configured to generate a cancelling magnetic field that cancels out the induction magnetic field; and a magnetic-field detecting bridge circuit having two outputs. The measurement target current is measured on the basis of a current flowing through the feedback coil when the induction magnetic field and the induction magnetic field and the cancelling magnetic field cancel each other out. The feedback coil, the magnetic cores, and the magnetic-field detecting bridge circuit are formed on a same substrate. The feedback coil is of a spiral type, and the magnetic cores are provided above and below the feedback coil.

Abstract: A tunneling magnetic sensing element includes: a pinned magnetic layer whose direction of magnetization is pinned in one direction; an insulating barrier layer; and a free magnetic layer whose direction of magnetization changes in response to an external magnetic field. The pinned magnetic layer, the insulating barrier layer and the free magnetic layer are deposited in the named order. A first protective layer composed of a platinum-group element is disposed on the free magnetic layer, and a second protective layer composed of Ti is disposed on the first protective layer.

Abstract: A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.

Abstract: A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

Abstract: A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (?R/R) compared with the related art.

Abstract: A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.