Abstract: Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.

Abstract: According to one embodiment, a storage device includes a plurality of memory nodes. Each of memory nodes includes a plurality of input ports, a plurality of output ports, a selector, a packet controller and a memory. The selector outputs a packet input to the input port to one of the output ports. The packet controller controls the selector. The memory stores data. The memory nodes are mutually connected at the input ports and the output ports. The memory node has an address that is determined by its physical position. The packet controller switches the output port that outputs the packet based on information including at least a destination address of the packet and an address of the memory node having the packet controller when receiving a packet that is not addressed to the memory node having the packet controller.

Abstract: In a semiconductor device manufacturing method according to an exemplary embodiment, a sulfur-containing film containing sulfur is deposited on an n-type semiconductor, a first metal film containing a first metal is deposited on the sulfur-containing film, a heat treatment is performed to form a metal semiconductor compound film by reacting the n-type semiconductor and the sulfur-containing film, and to introduce sulfur to an interface between the n-type semiconductor and the metal semiconductor compound film being formed.

Abstract: Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.

Abstract: A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.

Abstract: A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.

Abstract: A semiconductor device includes a semiconductor substrate, p-type first and n-type second semiconductor regions formed on the substrate so as to be insulated with each other, n-channel and p-channel MOS transistors formed on the first and second semiconductor regions, the n-channel transistor including a first pair of source/drain regions formed on the first semiconductor region, a first gate insulator formed in direct contact with the first semiconductor region and formed as an amorphous insulator containing at least La, and a first gate electrode formed on the first gate insulator, the p-channel MOS transistor including a second pair of source/drain regions formed opposite to each other on the second semiconductor region, a second gate insulator including a silicon oxide film and the amorphous insulating film formed thereon on the second semiconductor region, and a second gate electrode formed on the second gate insulator.

Abstract: A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.

Abstract: An absolute position measuring apparatus includes a first rotary encoder that detects a rotation of a spindle as a phase signal which varies in a first cycle and a second rotary encoder that detects the rotation of the spindle as another phase signal which varies in a second cycle. A rotation of a first rotor of the first rotary encoder is transmitted to a second rotor via a relay gear that is meshed with a first gear provided on an outer circumference of a first rotary cylinder and a second gear provided on an outer circumference of a second rotary cylinder. Thus, an absolute position of the spindle is calculated on the basis of two phase signals that are different in cycle. Further, it is not necessary to provide a conventionally-known spiral key groove so that the apparatus can be easily downsized. Manufacturing costs can be also reduced.

Abstract: A caliper gauge (1) includes a feeding mechanism (12) that moves a slider (11) along a main scale (10), in which the feeding mechanism (12) includes: an outer roller (121); an inner roller (122) provided in a manner rotatable around a rotary axis of the outer roller (121) to be in contact with the main scale (10); and a constant-pressure unit (123) that transmits the rotation of the outer roller (121) to the inner roller (122) and allows free rotation of the outer roller (121) relative to the inner roller (122) when more than a predetermined load is applied on the inner roller (122), the constant-pressure unit (123) including: saw-toothed projections provided on an inner circumference of the outer roller (121); and a plate spring fixed on an outer circumference of the inner roller (122) at a midsection thereof and contacted with the saw-toothed projections of the outer roller (121) on both ends thereof.

Abstract: A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.

Abstract: An absolute position measuring apparatus includes a first rotary encoder that detects a rotation of a spindle as a phase signal which varies in a first cycle and a second rotary encoder that detects the rotation of the spindle as another phase signal which varies in a second cycle. A rotation of a first rotor of the first rotary encoder is transmitted to a second rotor via a relay gear that is meshed with a first gear provided on an outer circumference of a first rotary cylinder and a second gear provided on an outer circumference of a second rotary cylinder. Thus, an absolute position of the spindle is calculated on the basis of two phase signals that are different in cycle. Further, it is not necessary to provide a conventionally-known spiral key groove so that the apparatus can be easily downsized. Manufacturing costs can be also reduced.

Abstract: A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.

Abstract: A semiconductor device includes a semiconductor substrate, p-type first and n-type second semiconductor regions formed on the substrate so as to be insulated with each other, n-channel and p-channel MOS transistors formed on the first and second semiconductor regions, the n-channel transistor including a first pair of source/drain regions formed on the first semiconductor region, a first gate insulator formed in direct contact with the first semiconductor region and formed as an amorphous insulator containing at least La, and a first gate electrode formed on the first gate insulator, the p-channel MOS transistor including a second pair of source/drain regions formed opposite to each other on the second semiconductor region, a second gate insulator including a silicon oxide film and the amorphous insulating film formed thereon on the second semiconductor region, and a second gate electrode formed on the second gate insulator.

Abstract: A bus power device includes a connector that is connected to a port of a host apparatus compliant with a predetermined interface standard; a current/voltage detecting unit that detects a current/voltage supplied from the host apparatus to a bus power line via the port and the connector; and a power assisting unit that assists a current to the bus power line based on a result of comparison between the current detected by the current/voltage detecting unit and a threshold current, and assists a voltage to the bus power line by an amount of shortfalls in the voltage based on a result of comparison between the voltage detected by the current/voltage detecting unit and a threshold voltage.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: A caliper gauge (1) includes a feeding mechanism (12) that moves a slider (11) along a main scale (10), in which the feeding mechanism (12) includes: an outer roller (121); an inner roller (122) provided in a manner rotatable around a rotary axis of the outer roller (121) to be in contact with the main scale (10); and a constant-pressure unit (123) that transmits the rotation of the outer roller (121) to the inner roller (122) and allows free rotation of the outer roller (121) relative to the inner roller (122) when more than a predetermined load is applied on the inner roller (122), the constant-pressure unit (123) including: saw-toothed projections provided on an inner circumference of the outer roller (121); and a plate spring fixed on an outer circumference of the inner roller (122) at a midsection thereof and contacted with the saw-toothed projections of the outer roller (121) on both ends thereof.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: A measuring tool has a slider (3) supported to a body frame (1) and a feeding mechanism (4) for moving the slider in axial direction. The feeding mechanism includes: an outer roller (41) rotatably supported to the body frame (1); a forward feed roller (42) disposed between the outer roller (41) and the slider (3) at a position closer to a forward side of the slider (3) relative to the outer roller (41); a reverse feed roller (43) disposed at a position on a reverse side; a roller holder (45) supporting these feed rollers to allow them to move along the circumference around the axis of the outer roller; a first leaf spring (44) that biases these feed rollers toward the slider side; and a power transmitter (46) connecting the outer roller (41) to these feed rollers to transmit the rotation of the outer roller to the feed rollers.

Abstract: A measuring tool has a slider (3) supported to a body frame (1) and a feeding mechanism (4) for moving the slider in axial direction. The feeding mechanism includes: an outer roller (41) rotatably supported to the body frame (1); a forward feed roller (42) disposed between the outer roller (41) and the slider (3) at a position closer to a forward side of the slider (3) relative to the outer roller (41); a reverse feed roller (43) disposed at a position on a reverse side; a roller holder (45) supporting these feed rollers to allow them to move along the circumference around the axis of the outer roller; a first leaf spring (44) that biases these feed rollers toward the slider side; and a power transmitter (46) connecting the outer roller (41) to these feed rollers to transmit the rotation of the outer roller to the feed rollers.