Patents by Inventor Masamichi Suzuki

Masamichi Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7863695
    Abstract: A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: January 4, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masamichi Suzuki, Masato Koyama, Yoshinori Tsuchiya, Hirotaka Nishino, Reika Ichihara, Akira Takashima
  • Patent number: 7833865
    Abstract: A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.
    Type: Grant
    Filed: May 5, 2008
    Date of Patent: November 16, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masamichi Suzuki, Daisuke Matsushita, Takeshi Yamaguchi
  • Patent number: 7755089
    Abstract: A semiconductor device includes a semiconductor substrate, p-type first and n-type second semiconductor regions formed on the substrate so as to be insulated with each other, n-channel and p-channel MOS transistors formed on the first and second semiconductor regions, the n-channel transistor including a first pair of source/drain regions formed on the first semiconductor region, a first gate insulator formed in direct contact with the first semiconductor region and formed as an amorphous insulator containing at least La, and a first gate electrode formed on the first gate insulator, the p-channel MOS transistor including a second pair of source/drain regions formed opposite to each other on the second semiconductor region, a second gate insulator including a silicon oxide film and the amorphous insulating film formed thereon on the second semiconductor region, and a second gate electrode formed on the second gate insulator.
    Type: Grant
    Filed: September 20, 2007
    Date of Patent: July 13, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masamichi Suzuki, Masato Koyama
  • Patent number: 7662685
    Abstract: A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: February 16, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masamichi Suzuki, Takeshi Yamaguchi
  • Patent number: 7584551
    Abstract: An absolute position measuring apparatus includes a first rotary encoder that detects a rotation of a spindle as a phase signal which varies in a first cycle and a second rotary encoder that detects the rotation of the spindle as another phase signal which varies in a second cycle. A rotation of a first rotor of the first rotary encoder is transmitted to a second rotor via a relay gear that is meshed with a first gear provided on an outer circumference of a first rotary cylinder and a second gear provided on an outer circumference of a second rotary cylinder. Thus, an absolute position of the spindle is calculated on the basis of two phase signals that are different in cycle. Further, it is not necessary to provide a conventionally-known spiral key groove so that the apparatus can be easily downsized. Manufacturing costs can be also reduced.
    Type: Grant
    Filed: July 30, 2008
    Date of Patent: September 8, 2009
    Assignee: Mitutoyo Corporation
    Inventors: Masamichi Suzuki, Shuji Hayashida, Shozaburo Tsuji
  • Patent number: 7533474
    Abstract: A caliper gauge (1) includes a feeding mechanism (12) that moves a slider (11) along a main scale (10), in which the feeding mechanism (12) includes: an outer roller (121); an inner roller (122) provided in a manner rotatable around a rotary axis of the outer roller (121) to be in contact with the main scale (10); and a constant-pressure unit (123) that transmits the rotation of the outer roller (121) to the inner roller (122) and allows free rotation of the outer roller (121) relative to the inner roller (122) when more than a predetermined load is applied on the inner roller (122), the constant-pressure unit (123) including: saw-toothed projections provided on an inner circumference of the outer roller (121); and a plate spring fixed on an outer circumference of the inner roller (122) at a midsection thereof and contacted with the saw-toothed projections of the outer roller (121) on both ends thereof.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: May 19, 2009
    Assignee: Mitutoyo Corporation
    Inventors: Osamu Saito, Masamichi Suzuki
  • Publication number: 20090114995
    Abstract: A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.
    Type: Application
    Filed: August 28, 2008
    Publication date: May 7, 2009
    Inventors: Masamichi Suzuki, Masato Koyama, Yoshinori Tsuchiya, Hirotaka Nishino, Reika Ichihara, Akira Takashima
  • Publication number: 20090031578
    Abstract: An absolute position measuring apparatus includes a first rotary encoder that detects a rotation of a spindle as a phase signal which varies in a first cycle and a second rotary encoder that detects the rotation of the spindle as another phase signal which varies in a second cycle. A rotation of a first rotor of the first rotary encoder is transmitted to a second rotor via a relay gear that is meshed with a first gear provided on an outer circumference of a first rotary cylinder and a second gear provided on an outer circumference of a second rotary cylinder. Thus, an absolute position of the spindle is calculated on the basis of two phase signals that are different in cycle. Further, it is not necessary to provide a conventionally-known spiral key groove so that the apparatus can be easily downsized. Manufacturing costs can be also reduced.
    Type: Application
    Filed: July 30, 2008
    Publication date: February 5, 2009
    Applicant: MITUTOYO CORPORATION
    Inventors: Masamichi Suzuki, Shuji Hayashida, Shozaburo Tsuji
  • Publication number: 20080318404
    Abstract: A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.
    Type: Application
    Filed: May 5, 2008
    Publication date: December 25, 2008
    Inventors: Masamichi Suzuki, Daisuke Matsushita, Takeshi Yamaguchi
  • Publication number: 20080224226
    Abstract: A semiconductor device includes a semiconductor substrate, p-type first and n-type second semiconductor regions formed on the substrate so as to be insulated with each other, n-channel and p-channel MOS transistors formed on the first and second semiconductor regions, the n-channel transistor including a first pair of source/drain regions formed on the first semiconductor region, a first gate insulator formed in direct contact with the first semiconductor region and formed as an amorphous insulator containing at least La, and a first gate electrode formed on the first gate insulator, the p-channel MOS transistor including a second pair of source/drain regions formed opposite to each other on the second semiconductor region, a second gate insulator including a silicon oxide film and the amorphous insulating film formed thereon on the second semiconductor region, and a second gate electrode formed on the second gate insulator.
    Type: Application
    Filed: September 20, 2007
    Publication date: September 18, 2008
    Inventors: Masamichi Suzuki, Masato Koyama
  • Patent number: 7421594
    Abstract: A bus power device includes a connector that is connected to a port of a host apparatus compliant with a predetermined interface standard; a current/voltage detecting unit that detects a current/voltage supplied from the host apparatus to a bus power line via the port and the connector; and a power assisting unit that assists a current to the bus power line based on a result of comparison between the current detected by the current/voltage detecting unit and a threshold current, and assists a voltage to the bus power line by an amount of shortfalls in the voltage based on a result of comparison between the voltage detected by the current/voltage detecting unit and a threshold voltage.
    Type: Grant
    Filed: December 27, 2004
    Date of Patent: September 2, 2008
    Assignee: Fujitsu Limited
    Inventors: Kenji Nakajima, Kazuhide Ooba, Masamichi Suzuki
  • Patent number: 7348644
    Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
    Type: Grant
    Filed: April 20, 2006
    Date of Patent: March 25, 2008
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masahiro Koike, Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Akira Takashima, Masamichi Suzuki, Akira Nishiyama
  • Publication number: 20080047158
    Abstract: A caliper gauge (1) includes a feeding mechanism (12) that moves a slider (11) along a main scale (10), in which the feeding mechanism (12) includes: an outer roller (121); an inner roller (122) provided in a manner rotatable around a rotary axis of the outer roller (121) to be in contact with the main scale (10); and a constant-pressure unit (123) that transmits the rotation of the outer roller (121) to the inner roller (122) and allows free rotation of the outer roller (121) relative to the inner roller (122) when more than a predetermined load is applied on the inner roller (122), the constant-pressure unit (123) including: saw-toothed projections provided on an inner circumference of the outer roller (121); and a plate spring fixed on an outer circumference of the inner roller (122) at a midsection thereof and contacted with the saw-toothed projections of the outer roller (121) on both ends thereof.
    Type: Application
    Filed: August 17, 2007
    Publication date: February 28, 2008
    Applicant: MITUTOYO CORPORATION
    Inventors: Osamu Saito, Masamichi Suzuki
  • Patent number: 7300838
    Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
    Type: Grant
    Filed: April 20, 2006
    Date of Patent: November 27, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masahiro Koike, Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Akira Takashima, Masamichi Suzuki, Akira Nishiyama
  • Patent number: 7266906
    Abstract: A measuring tool has a slider (3) supported to a body frame (1) and a feeding mechanism (4) for moving the slider in axial direction. The feeding mechanism includes: an outer roller (41) rotatably supported to the body frame (1); a forward feed roller (42) disposed between the outer roller (41) and the slider (3) at a position closer to a forward side of the slider (3) relative to the outer roller (41); a reverse feed roller (43) disposed at a position on a reverse side; a roller holder (45) supporting these feed rollers to allow them to move along the circumference around the axis of the outer roller; a first leaf spring (44) that biases these feed rollers toward the slider side; and a power transmitter (46) connecting the outer roller (41) to these feed rollers to transmit the rotation of the outer roller to the feed rollers.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: September 11, 2007
    Assignee: Mitutoyo Corporation
    Inventor: Masamichi Suzuki
  • Publication number: 20070068027
    Abstract: A measuring tool has a slider (3) supported to a body frame (1) and a feeding mechanism (4) for moving the slider in axial direction. The feeding mechanism includes: an outer roller (41) rotatably supported to the body frame (1); a forward feed roller (42) disposed between the outer roller (41) and the slider (3) at a position closer to a forward side of the slider (3) relative to the outer roller (41); a reverse feed roller (43) disposed at a position on a reverse side; a roller holder (45) supporting these feed rollers to allow them to move along the circumference around the axis of the outer roller; a first leaf spring (44) that biases these feed rollers toward the slider side; and a power transmitter (46) connecting the outer roller (41) to these feed rollers to transmit the rotation of the outer roller to the feed rollers.
    Type: Application
    Filed: September 21, 2006
    Publication date: March 29, 2007
    Applicant: MITUTOYO CORPORATION
    Inventor: Masamichi Suzuki
  • Publication number: 20060186488
    Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
    Type: Application
    Filed: April 20, 2006
    Publication date: August 24, 2006
    Inventors: Masahiro Koike, Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Akira Takashima, Masamichi Suzuki, Akira Nishiyama
  • Publication number: 20060186489
    Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
    Type: Application
    Filed: April 20, 2006
    Publication date: August 24, 2006
    Inventors: Masahiro Koike, Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Akira Takashima, Masamichi Suzuki, Akira Nishiyama
  • Patent number: 7075158
    Abstract: A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.
    Type: Grant
    Filed: October 6, 2005
    Date of Patent: July 11, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masato Koyama, Akira Nishiyama, Masamichi Suzuki, Yuuichi Kamimuta, Tsunehiro Ino
  • Patent number: 7053455
    Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: May 30, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masahiro Koike, Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Akira Takashima, Masamichi Suzuki, Akira Nishiyama