Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding energy side of an inflection point in first differentiation of an O1s photoelectron spectrum, and a gate electrode formed on the gate insulating film.

Abstract: Provided is a measuring device 1 for measuring the size of an object comprising a body 2, and a spindle 3 which is screwed into the body 2 and axially advances and retracts by screwing with respect to the body 2, the measurement being based on the axial displacement of the spindle 3 effected by the revolution of the spindle, wherein the spindle is screwed into the body 2 via a multiple-start thread 31. Therefore, it is possible to displace the spindle 3 at a high speed, which improves the operability of the measuring device.

Abstract: A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.

Abstract: A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.

Abstract: A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.

Abstract: A rotary movement converting mechanism for converting a rotary movement of a rotary body (43) into a linear movement of a movable body (2) has a support body (42) fixed to a body frame (3) and provided with a slit (42A) along an axial direction of the rotary body (43), a spiral groove (43A) formed on the inner circumference of the rotary body (43), and a top member (41) provided on the movable body (2). The top member (41) has an engaging member (41 A) inserted through the slit (42A) and having a tip end engaged with the spiral groove (43A), and a stop member (41C) for stopping the linear movement of the movable body (2) when a load is applied on the linear movement of the movable body (2). Accordingly, when a load is applied on the linear movement of the movable body (2), the linear movement is stopped and the minute displacement of the movable body (2) is restrained, thereby enhancing the stability of a measuring instrument in measuring a workpiece.

Abstract: A bus power device includes a connector that is connected to a port of a host apparatus compliant with a predetermined interface standard; a current/voltage detecting unit that detects a current/voltage supplied from the host apparatus to a bus power line via the port and the connector; and a power assisting unit that assists a current to the bus power line based on a result of comparison between the current detected by the current/voltage detecting unit and a threshold current, and assists a voltage to the bus power line by an amount of shortfalls in the voltage based on a result of comparison between the voltage detected by the current/voltage detecting unit and a threshold voltage.

Abstract: A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.

Abstract: A semiconductor device comprises a substrate and a MISFET including source-drain regions formed in the substrate and a gate electrode formed on the substrate with a gate insulating film interposed therebetween. The gate electrode is formed of a metal oxynitride film containing a metal-oxygen-nitrogen bond chain. Alternatively, the gate insulating film is formed of a nitrided metal silicate film containing at least one of a metal-oxygen-nitrogen bond chain and asilicon-oxygen-nitrogen bond chain.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: An image-reading apparatus has a digital camera (2) for sequentially taking image of each part of a lateral dentition surface as partial images, a distance sensor (21) for measuring a distance from the digital camera (2) to the lateral dentition surface as an imaging distance, a memory that stores the partial images and the imaging distance when the partial images are taken, an image magnification converter that converts the imaging magnification of the partial images so that the imaging magnification of all of the partial images becomes equal based on the imaging distance, and an image combiner for generating a combined image by combining more than one of the partial images.

Abstract: A rotary movement converting mechanism for converting a rotary movement of a rotary body (43) into a linear movement of a movable body (2) has a support body (42) fixed to a body frame (3) and provided with a slit (42A) along an axial direction of the rotary body (43), a spiral groove (43A) formed on the inner circumference of the rotary body (43), and a top member (41) provided on the movable body (2). The top member (41) has an engaging member (41 A) inserted through the slit (42A) and having a tip end engaged with the spiral groove (43A), and a stop member (41C) for stopping the linear movement of the movable body (2) when a load is applied on the linear movement of the movable body (2). Accordingly, when a load is applied on the linear movement of the movable body (2), the linear movement is stopped and the minute displacement of the movable body (2) is restrained, thereby enhancing the stability of a measuring instrument in measuring a workpiece.

Abstract: An output-attached measuring instrument has: a measuring instrument body (1) having a circuit board (14) for processing a measurement signal from a sensor as a measurement data, an output electrode (15) for outputting the measurement data, and a connector hole (17) in communication with the output electrode and opening to an outer surface; and a connection cable (30) having a connector (32) capable of attaching to and detaching from the connector hole on an end thereof for transmitting the measurement data obtained by the measuring instrument body to an external device, the connector having a projection (33) capable of being plugged to and unplugged from the connector hole and a connector terminal (34) exposed on a surface thereof, where an elastic connector (20) having am electro-conductive portion for electrically connecting the connector terminal and the output electrode is accommodated in a space of the connector hole of the measuring instrument body and the elastic connector shuts the connector hole when

Abstract: Provided is a measuring device 1 for measuring the size of an object comprising a body 2, and a spindle 3 which is screwed into the body 2 and axially advances and retracts by screwing with respect to the body 2, the measurement being based on the axial displacement of the spindle 3 effected by the revolution of the spindle, wherein the spindle is screwed into the body 2 via a multiple-start thread 31. Therefore, it is possible to displace the spindle 3 at a high speed, which improves the operability of the measuring device.

Abstract: An output-attached measuring instrument has: a measuring instrument body (1) having a circuit board (14) for processing a measurement signal from a sensor as a measurement data, an output electrode (15) for outputting the measurement data, and a connector hole (17) in communication with the output electrode and opening to an outer surface; and a connection cable (30) having a connector (32) capable of attaching to and detaching from the connector hole on an end thereof for transmitting the measurement data obtained by the measuring instrument body to an external device, the connector having a projection (33) capable of being plugged to and unplugged from the connector hole and a connector terminal (34) exposed on a surface thereof, where an elastic connector (20) having am electro-conductive portion for electrically connecting the connector terminal and the output electrode is accommodated in a space of the connector hole of the measuring instrument body and the elastic connector shuts the connector hole when

Abstract: Disclosed is a program for measuring the impurity in semiconductor wafer, comprising an instruction for supplying to a computer a reference dose, an instruction for causing the computer to convert each of a plurality of impurity profiles measured in a direction of depth of the semiconductor wafer into a dose, and an instruction for causing the computer to select a converted dose closest to the reference dose from the plurality of converted doses.