Abstract: A compound of formula (1): Z1-?a-?b-?c-?d-?e-Z2 ??(1), wherein ?, ?, ?, ?, and ? are respectively units of formulas (1?), (1?), (1?), (1?), and (1?): and the structure of the unit ? is different from the structure of the unit ?, the structure of the unit ? is different from the structure of the unit ?, the structure of the unit ? is different from the structure of the unit ?, and the structure of the unit ? is different from the structure of the unit ?.

Abstract: There is provided a multilayer electrode including a contact layer capable of being superposed on a strain resistance film; a diffusion prevention layer superposed on the contact layer; and a mounting layer superposed on the diffusion prevention layer, in which the diffusion prevention layer contains a transition element belonging to the fifth or sixth periods.

Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40?x?0.90 and 0.90?y?1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2? of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2? of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K? ray as an X-ray source is 3.00 or more.

Abstract: The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr1-x, Cax)m(Ti1-yHfy)O3-?N?, in which 0<x?0.15, 0<y?0.15, 0.90?m?1.15, and 0<??0.05 are satisfied.

Abstract: To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-?N?, in which 0.15<x?0.90, 0<y?0.15, 0.90?m?1.15, 0<??0.05 are satisfied.

Abstract: A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 ?m square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 ?m square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Abstract: To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-?N?, in which 0.15<x?0.90, 0<y?0.15, 0.90?m?1.15, 0<??0.05 are satisfied.

Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40?x?0.90 and 0.90?y?1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2? of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2? of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K? ray as an X-ray source is 3.00 or more.

Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Abstract: The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr1-x, Cax)m(Ti1-yHfy)O3-?N?, in which 0<x?0.15, 0<y?0.15, 0.90?m?1.15, and 0<??0.05 are satisfied.

Abstract: A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1?k)z)O3 0.15?x?0.7, 0.28?y?0.75, 0.02?z?0.30, 0.17?k?0.83, 0.75?m?1.0, and x+y+z=1.

Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1?k)z)O3 0.15?x?0.7, 0.28?y?0.75, 0.02?z?0.30, 0.17?k?0.83, 0.75?m?1.0, and x+y+z=1.