Masanobu Hanazono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A magnetic detecting device is constructed of a substrate, a first magnetic layer formed on the substrate, a first magnetic layer formed on the substrate, an intermediate layer containing an atom indicative of weak spincoupling and formed on the first magnetic film, and a second magnetic layer formed on the intermediate layer. The magnetic detecting device further comprises a unit or supplying a current through the first and second magnetic layers, and a unit for detecting a voltage generated between the first magnetic layer and the second magnetic layer while the current is supplied thereto.
Abstract: An electrophotographic photoreceptor comprising a photoconductive layer comprising a photoconductor, a support for the photoconductive layer and a surface layer formed on the photoconductive layer and comprising a curable resin film and an inorganic insulator pieces having a size larger than the film thickness of the curable resin film. In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces have protruded from the curable resin film. Since the curable resin is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces prevent the abrasion of the resin, the surface layer having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized.
Abstract: A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material.
Abstract: An electrophotographic photosensitive element, e.g. for a photocopier or laser printer, comprises a substrate and a plurality of layers on the substrate including a photoconductive layer of a-Si:H and a protective and lubricating layer which is outermost from said substrate. To provide wear resistance and long life-time of the protective and lubricating layer, this layer comprises a microporous solid material having a pore structure which extends substantially over the whole thickness of the material and a hydrophobic lubricant carried by said solid material. The lubricant includes a liquid film and often times a non-particulate solid film, and provides at least part of the outer surface of the element and is present also in the pores of said microporous solid material.
March 16, 1990
Date of Patent:
April 20, 1993
Hitachi, Ltd., Hitachi Chemical Co., Ltd.
Abstract: An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic.
Abstract: This invention provides a magnetic disk device having a total memory capacity of 30 giga bytes or more, or more desirably 30.about.40 giga bytes. The magnetic disk used in this magnetic disk device has a plane record density of 45.about.80 mega bits per square inch. The thin film magnetic head has a pole thickness (P.sub.T), a magnetic flux density (B.sub.s), a magnetic gap depth (G.sub.d) and a record wavelenth (.lambda.) which satisfy the formulaG.sub.d .ltoreq.0.13 P.sub.T B.sub.s (.lambda.+4.3)-2.1.The magnetic disk rotation means rotate the magnetic disk at a speed of 24 m per second or more.
Abstract: An electrophotographic member comprising a support, a photoconductive layer formed thereon, and a surface layer formed thereon, said surface layer including or attaching a lubricating agent having a perfluoropolyoxyalkyl or perfluoropolyoxyalkylene group to form an organic surface protective lubricating layer, and a fixing group to be fixed to the surface layer, is excellent in moisture resistance, wear resistance and cleaning properties and thus useful in an electrophotographic apparatus with a long life and high reliability.
August 16, 1989
Date of Patent:
December 17, 1991
Hitachi, Ltd., Hitachi Chemical Company, Ltd.
Abstract: A superconducting thin film obtained by laminating a Cu-O atomic pair film and another oxide film while growing in one direction shows a higher superconducting critical temperature (Tc). By alternately laminating a thin film of A.sub.2 CuO.sub.4 and a thin film of L.sub.2 CuO.sub.4, wherein A and L are different rare earth elements, the Tc can be enhanced remarkably.
Abstract: A method of forming a thin film pattern on a base having a step portion. This method comprises a first step of forming a thin film of given material on the base, a second step of forming a predetermined pattern of a first photoresist film on said thin film at one of a first portion including a lower part of the step portion and a second portion including an upper part of the step portion, a third step of forming a predetermined pattern of a second photoresist film on said thin film at the other of the first and second portions and a fourth step of applying ion-milling to said thin film of given material using masks said first and second photoresist film patterns formed on said thin film at the first and second portions.
Abstract: A thin film magnetic head provided with a first and a second thin film made of a magnetic material, disposed so as to form a closed magnetic circuit; and an intermediate film made of a non-magnetic material, disposed between the first and the second thin films so as to form a magnetic gap at a part of the magnetic circuit; wherein at least one of the first and the second thin films is made of a quaternary amorphous magnetic alloy, whose principal component is cobalt and which contains hafnium, tantalum and palladium.
Abstract: A thin film magnetic head is disclosed which includes a substrate, a first magnetic core disposed on the substrate, a second magnetic core forming a magnetic path in conjunction with the first magnetic core, a conductor coil wound in the magnetic path and a gap formed between ends of the first magnetic core and the second magnetic core. At least one of the first magnetic core and the second magnetic core includes a thin film of a cobalt alloy. The cobalt alloy includes 20-70 atomic percent of cobalt, 20-60 atomic percent of nickel, 12-30 atomic percent of iron and 5-32 atomic percent of palladium.
Abstract: In an electrophotographic photosensitive device, which comprises an electroconductive support, a photoconductive layer provided thereon, and a surface protective layer provided on the photoconductive layer, the surface protective layer being made from a film having a density of localized states of not more than 5.times.10.sup.17 cm.sup.-3 and a higher dark resistance than that of the photoconductive layer, the surface protective layer is less susceptible to deterioration, adhesion to the photoconductive layer is enhanced, and thus the device has a prolonged life.
Abstract: A thin film magnetic head comprising a lower magnetic film, an upper magnetic film which is formed over the lower magnetic film and in which one end is come into contact with one end of the lower magnetic film and the other end faces the other end of the lower magnetic film through a magnetic gap and thereby forming a magnetic circuit which has a magnetic gap in a part thereof, together with the lower magnetic film, and a conductor coil forming a coil of a predetermined number of turns and passing between the upper and lower magnetic films and crossing the magnetic circuit. Each of the upper and lower magnetic films is formed of a Co-Ni-Fe ternary alloy having a face-centered cubic crystal structure. Also, uniaxial anisotropy is alternately and perpendicularly given in every layer of a predetermined thickness stacked in the direction of thickness of the film.
Abstract: A selective working method in which the surface to be worked of a workpiece is locally irradiated with energy beams and an electroless plating solution or an electroless etching solution is contacted with the irradiated workpiece surface, with the electroless plating solution or the electroless etching solution flowing continuously in the substantially same direction of as the direction of an irradiation of energy beams. The electroless plating of the electroless etching can be conducted selectively by this method. Above selective working method is best suited for the formation or correction (repair, filling up etc.) of micro-patterns on the workpiece such as metals, semi-conductors, insulators, etc.
Abstract: The film is composed of an alternate lamination of unit iron layers and unit layers of ferromagnetic iron compound such as Fe.sub.3 Al, Fe.sub.3 Si, Fe.sub.3 Ge and Fe.sub.3 Ga. The thickness of the both unit layers is less than 70 .ANG.. The film has a high saturation magnetization more than 230 emu/g and a high thermal stability so that the film is particularly applicable to a magnetic head core.
Abstract: In producing a magnetic head by thin film technique, a magnetic film is formed on an insulating member covering coil conductor films after the surface of the insulating member is flattened. After a flattening coating is formed on the insulating member, the flattening coating as well as the insulating member are etched by plasma-assisted etching technique in order to flatten the surface.
Abstract: In a selective electroless plating process suitable for formation and correction of a minute pattern by plating film, irradiation of the surface of a workpiece with a laser beam serves to selectively activate the surface of the workpiece to allow an electroless plating film to deposited on only the activated portions. The portion of the workpiece where plating is effected is irradiated with a radiation energy beam to form a damaged portion, which is contact with a plating bath during and/or after the irradiation to selectively from a plating film on the damaged portion. The portion of a workpiece where a pole as the connector part of a multilayer wiring board is to be formed is irradiated with a laser beam and allowed to have a pole selectively formed only thereon.
Abstract: A magnetic thin film of Ni-Co-Fe ternary alloy containing at most 75% by weight of Ni, 10 to 90% by weight of Co, and at most 15% by weight of Fe, which shows the magnetostriction constant between +2.times.10.sup.-6 to -2.times.10.sup.-6 and shows a uniaxial magnetic anisotropy of at most 10 Oe.The film is formed through the vacuum evaporation of the alloy during which two orthogonal external magnetic fields, directions x and y, are alternately applied over the deposition surface of a substrate.The film is suitable for a core material of a thin film magnetic head with a higher recording density.
Abstract: A thermal head which comprises an electrically insulating substrate, a glaze layer laid thereon, a heating resistor layer laid on the glaze layer, a plurality of first layer conductors laid on the heating resistor layer and provided at predetermined distances, a protective film laid on the heating resistor layer, and a plurality of second layer conductors counterposed to the first layer conductors and laid on the first layer conductors through an interlayer insulating film, where the interlayer insulating layer is in a two layer structure of an inorganic insulating material layer having a compressive stress and an organic insulating material layer, and the organic insulating material layer is positioned on the second layer conductor side. The thermal head as structured above is free from a problem of crack formation on the interlayer insulating layer, causing a short circuit and free from a problem of discontinuation of the second layer conductors.
Abstract: A method of patterning a thin film by dry etching is disclosed in which, in order for a thin alumina film to have a predetermined pattern, the thin alumina film is selectively removed by carrying out the ion beam etching which uses a carbon fluoride gas, while using a photoresist film as a mask.
August 9, 1984
Date of Patent:
June 3, 1986
Computer Basic Technology Research Association