Patents by Inventor Masanori Ikari

Masanori Ikari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8831797
    Abstract: A wheel loader includes a vehicle body, a work implement, a link mechanism and a control section. The work implement has a boom a work tool. The link mechanism is configured and arranged to change a relative angle of the work tool with respect to the boom when the boom is rotated upward, such that an amount of variation of an angle of the work tool with respect to a horizontal direction is less than an amount of variation of an angle of the work tool with respect to the horizontal direction when the boom is rotated upward while the work tool is at a fixed relative angle with respect to the boom. The control section is configured to execute an auto tilt control that causes the work tool to rotate upward when the boom is rotated upward within an angular range below the horizontal direction during excavation.
    Type: Grant
    Filed: September 19, 2012
    Date of Patent: September 9, 2014
    Assignee: Komatsu Ltd.
    Inventors: Atsushi Shirao, Masanori Ikari
  • Publication number: 20140209925
    Abstract: The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.
    Type: Application
    Filed: March 28, 2014
    Publication date: July 31, 2014
    Applicant: SIXPOINT MATERIALS, INC.
    Inventors: Edward LETTS, Tadao HASHIMOTO, Masanori IKARI
  • Patent number: 8789644
    Abstract: A wheel loader (50) is designed so that when a specific first condition is met for vehicle speed, accelerator opening, engine speed, and HST pressure, the engine absorption torque curve of an HST pump (4) is switched to shift the matching point from the low-engine speed side to the high-engine speed side. On the other hand, if a second condition is met for vehicle speed and HST pressure, control is performed so that the absorption torque curve of the HST pump (4) is returned from the high-engine speed side to the low-engine speed side.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: July 29, 2014
    Assignee: Komatsu Ltd.
    Inventors: Atsushi Shirao, Masanori Ikari
  • Publication number: 20140174340
    Abstract: The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically the future seeds are optimized if chosen from an area of relieved stress, on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to itnprove structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.
    Type: Application
    Filed: February 27, 2014
    Publication date: June 26, 2014
    Applicant: SIXPOINT MATERIALS, INC.
    Inventors: Edward LETTS, Tadao HASHIMOTO, Masanori IKARI
  • Patent number: 8728234
    Abstract: The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: May 20, 2014
    Assignee: Sixpoint Materials, Inc.
    Inventors: Edward Letts, Tadao Hashimoto, Masanori Ikari
  • Publication number: 20140129093
    Abstract: A wheel loader includes a vehicle body, a work implement, a link mechanism and a control section. The work implement has a boom a work tool. The link mechanism is configured and arranged to change a relative angle of the work tool with respect to the boom when the boom is rotated upward, such that an amount of variation of an angle of the work tool with respect to a horizontal direction is less than an amount of variation of an angle of the work tool with respect to the horizontal direction when the boom is rotated upward while the work tool is at a fixed relative angle with respect to the boom. The control section is configured to execute an auto tilt control that causes the work tool to rotate upward when the boom is rotated upward within an angular range below the horizontal direction during excavation.
    Type: Application
    Filed: September 19, 2012
    Publication date: May 8, 2014
    Applicant: KOMATSU LTD.
    Inventors: Atsushi Shirao, Masanori Ikari
  • Publication number: 20140094357
    Abstract: Provided is a method of manufacturing a transparent sesquioxide sintered body by which a transparent M2O3 type sesquioxide sintered body can be manufactured. A powder including particles of an oxide of at least one rare earth element selected from Y, Sc or lanthanide elements and Zr oxide particles is prepared as a raw material powder, wherein in the particle size distribution of the rare earth element oxide particles, or in the particle size distribution of secondary particles in the case where the rare earth element oxide particles are agglomerated to form the secondary particles, the particle diameter D2.5 value at which the cumulative particle amount from the minimum particle size side is 2.5% based on the total particle amount is in the range from 180 nm to 2000 nm, inclusive. The raw material powder is press molded into a predetermined shape, followed by sintering.
    Type: Application
    Filed: October 2, 2013
    Publication date: April 3, 2014
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Masanori IKARI, Yoshihiro NOJIMA, Shinji MAKIKAWA, Akio IKESUE
  • Patent number: 8585822
    Abstract: The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: November 19, 2013
    Assignee: Sixpoint Materials, Inc.
    Inventors: Tadao Hashimoto, Masanori Ikari, Edward Letts
  • Patent number: 8557043
    Abstract: The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: October 15, 2013
    Assignee: SixPoint Materials, Inc.
    Inventors: Tadao Hashimoto, Masanori Ikari, Edward Letts
  • Publication number: 20130256043
    Abstract: A storage section stores inching characteristic information. The inching characteristic information defines a relationship between an inching operation quantity and an inching characteristic value. The inching characteristic value is a value dependent on pilot pressure that is reduced through inching control. A computing section references the inching characteristic information to thereby compute, from the inching operation quantity detected by the inching operation quantity detector, a command value to the pilot pressure control valve. In the inching characteristic information, a rate of lowering the inching characteristic value when the inching operation quantity is within a first range is greater than a rate of lowering the inching characteristic value when the inching operation quantity is within a second range greater than the first range.
    Type: Application
    Filed: May 9, 2012
    Publication date: October 3, 2013
    Inventors: Atsushi Shirao, Masanori Ikari, Isao Ueno
  • Patent number: 8532886
    Abstract: A storage section stores inching characteristic information. The inching characteristic information defines a relationship between an inching operation quantity and an inching characteristic value. The inching characteristic value is a value dependent on pilot pressure that is reduced through inching control. A computing section references the inching characteristic information to thereby compute, from the inching operation quantity detected by the inching operation quantity detector, a command value to the pilot pressure control valve. In the inching characteristic information, a rate of lowering the inching characteristic value when the inching operation quantity is within a first range is greater than a rate of lowering the inching characteristic value when the inching operation quantity is within a second range greater than the first range.
    Type: Grant
    Filed: May 9, 2012
    Date of Patent: September 10, 2013
    Assignee: Komatsu Ltd.
    Inventors: Atsushi Shirao, Masanori Ikari, Isao Ueno
  • Patent number: 8418798
    Abstract: In a work vehicle, a controller controls the displacement of a hydraulic motor by electronically controlling a motor displacement control part. When an inching operation member is being operated, the controller performs inching control for setting the minimum displacement of the hydraulic motor to a greater value in correspondence with a lower pilot pressure detected by a pilot pressure detector.
    Type: Grant
    Filed: September 1, 2010
    Date of Patent: April 16, 2013
    Assignee: Komatsu Ltd.
    Inventors: Takuya Mori, Hirotaka Takahashi, Toru Shiina, Masanori Ikari, Atsushi Shirao
  • Patent number: 8420041
    Abstract: The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: April 16, 2013
    Assignee: Sixpoint Materials, Inc.
    Inventors: Tadao Hashimoto, Edward Letts, Masanori Ikari
  • Patent number: 8386136
    Abstract: In the construction vehicle, a controller is configured to implement a pump displacement rapid change suppression control for controlling the displacement of a travel hydraulic pump so that travel circuit oil pressure reaches a maximum value equal to or less than a cutoff pressure value when the vehicle has stopped regardless of engine speed, and the displacement of the travel hydraulic pump gradually increases as the travel circuit oil pressure decreases from the maximum value.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: February 26, 2013
    Assignee: Komatsu Ltd.
    Inventors: Atsushi Shirao, Masanori Ikari
  • Patent number: 8357243
    Abstract: The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: January 22, 2013
    Assignee: Sixpoint Materials, Inc.
    Inventors: Tadao Hashimoto, Masanori Ikari, Edward Letts
  • Publication number: 20120304917
    Abstract: Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented.
    Type: Application
    Filed: June 7, 2012
    Publication date: December 6, 2012
    Applicant: SIXPOINT MATERIALS, INC.
    Inventors: Tadao HASHIMOTO, Edward LETTS, Masanori IKARI
  • Patent number: 8236267
    Abstract: The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, and at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. This invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: August 7, 2012
    Assignee: Sixpoint Materials, Inc.
    Inventors: Tadao Hashimoto, Edward Letts, Masanori Ikari
  • Publication number: 20120152640
    Abstract: In a work vehicle, a controller controls the displacement of a hydraulic motor by electronically controlling a motor displacement control part. When an inching operation member is being operated, the controller performs inching control for setting the minimum displacement of the hydraulic motor to a greater value in correspondence with a lower pilot pressure detected by a pilot pressure detector.
    Type: Application
    Filed: September 1, 2010
    Publication date: June 21, 2012
    Applicant: KOMATSU LTD.
    Inventors: Takuya Mori, Hirotaka Takahashi, Toru Shiina, Masanori Ikari, Atsushi Shirao
  • Publication number: 20120057956
    Abstract: A work vehicle includes a pair of booms, a link mechanism and a control unit. The booms are attached to a front part of a vehicle body in an upwardly and downwardly rotatable state. The link mechanism couples a working unit to tips of the booms. The link mechanism is configured to keep the working unit in a posture generally parallel to the ground without rotating the working unit with respect to the ground while the booms are elevated from a position where the working unit is disposed on the ground when the working unit is a fork. The control unit is configured to execute a tilt angle adjusting control for the working unit in accordance with variation in an angle of the booms while the booms are elevated when a tilt angle of the working unit is greater than or equal to a predetermined threshold.
    Type: Application
    Filed: May 11, 2010
    Publication date: March 8, 2012
    Applicant: KOMATSU LTD.
    Inventors: Atsushi Shirao, Masanori Ikari
  • Publication number: 20110308879
    Abstract: A wheel loader (50) is designed so that when a specific first condition is met for vehicle speed, accelerator opening, engine speed, and HST pressure, the engine absorption torque curve of an HST pump (4) is switched to shift the matching point from the low-engine speed side to the high-engine speed side. On the other hand, if a second condition is met for vehicle speed and HST pressure, control is performed so that the absorption torque curve of the HST pump (4) is returned from the high-engine speed side to the low-engine speed side.
    Type: Application
    Filed: February 12, 2010
    Publication date: December 22, 2011
    Applicant: KOMATSU LTD.
    Inventors: Atsushi Shirao, Masanori Ikari