Patents by Inventor Masanori Nakagawa

Masanori Nakagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240319578
    Abstract: A reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank comprises a substrate, a multilayer reflection film on the substrate, and an absorber film on the multilayer reflection film. The reflective mask blank is characterized in that: the absorber film includes an absorption layer and a reflectance adjustment layer; the absorption layer contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer includes a lower surface region including a surface on the substrate side, and an upper surface region including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region and the concentration (at.
    Type: Application
    Filed: May 31, 2024
    Publication date: September 26, 2024
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Tsutomu SHOKI
  • Patent number: 12072619
    Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank (100) comprises a substrate (1), a multilayer reflection film (2) on the substrate, and an absorber film (4) on the multilayer reflection film. The reflective mask blank (100) is characterized in that: the absorber film (4) includes an absorption layer (42) and a reflectance adjustment layer (44); the absorption layer (42) contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer (42) includes a lower surface region (46) including a surface on the substrate side, and an upper surface region (48) including a surface on the side opposite to the substrate; and the concentration (at.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: August 27, 2024
    Assignee: HOYA CORPORATION
    Inventors: Masanori Nakagawa, Tsutomu Shoki
  • Patent number: 12019366
    Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas. A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: June 25, 2024
    Assignee: HOYA CORPORATION
    Inventors: Masanori Nakagawa, Tsutomu Shoki
  • Publication number: 20240160095
    Abstract: Provided are a reflective mask blank, a reflective mask, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device, capable of suppressing occurrence of a blister of a substrate edge portion under an EUV exposure environment in a hydrogen atmosphere. The reflective mask blank comprises a substrate, a multilayer reflective film on the substrate, a protective film on the multilayer reflective film, and an absorber film on the protective film. When the film thickness of the absorber film at a center of the substrate is T nm, there is at least one location where the film thickness of the absorber film in a range of 2.5 mm or less from a side surface of the substrate toward the center thereof is the smaller of 35 nm or less or (T?5) nm or less.
    Type: Application
    Filed: March 24, 2022
    Publication date: May 16, 2024
    Applicant: HOYA CORPORATION
    Inventor: Masanori NAKAGAWA
  • Publication number: 20240142866
    Abstract: Provided are a reflective mask blank, a reflective mask, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device, capable of preventing occurrence of electrostatic breakdown in a substrate peripheral edge portion. The reflective mask blank comprises a substrate, a multilayer reflective film on the substrate, a protective film on the multilayer reflective film, and an absorber film on the protective film. The absorber film comprises a buffer layer and an absorption layer formed on the buffer layer. When a distance from a center of the substrate to an outer peripheral end of the protective film is denoted by Lcap, and a distance from the center of the substrate to an outer peripheral end of the buffer layer is denoted by Lbuf, Lcap?Lbuf is satisfied. There is at least one location where a total film thickness of the protective film and the buffer layer is 4.5 nm or more in a range of 0.
    Type: Application
    Filed: March 25, 2022
    Publication date: May 2, 2024
    Applicant: HOYA CORPORATION
    Inventor: Masanori NAKAGAWA
  • Publication number: 20240042564
    Abstract: Provided is an indexing processing machine, including: an index table having a rotation center, a workpiece being attachable to the index table at multiple index positions; and one or more processing machines selected from the group of a front processing machine, a top processing machine, and a side processing machine, the one or more processing machines disposed at least two of the multiple index positions.
    Type: Application
    Filed: July 21, 2023
    Publication date: February 8, 2024
    Inventors: Hiroki HAREMAKI, Masanori NAKAGAWA, Kazuo KIMURA
  • Publication number: 20230418148
    Abstract: Provided are a substrate with a multilayer reflective film comprising a protective film having high resistance to a fluorine-based etching gas used in an absorber pattern repair step without reducing a reflectance of the multilayer reflective film, a reflective mask blank, and a reflective mask. A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 14 disposed on the multilayer reflective film 12. The protective film 14 comprises a first metal and a second metal. Standard free energy of formation of a fluoride of the first metal is higher than standard free energy of formation of RuF5. The second metal has an extinction coefficient of 0.03 or less at a wavelength of 13.5 nm.
    Type: Application
    Filed: December 16, 2021
    Publication date: December 28, 2023
    Applicant: HOYA CORPORATION
    Inventors: Ikuya FUKASAWA, Kota SUZUKI, Masanori NAKAGAWA
  • Publication number: 20230314928
    Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device capable of preventing film peeling of a multilayer reflective film due to cleaning or the like during a mask manufacturing process and use of a mask, and reducing occurrence of defects on an absorber film due to the film peeling of the multilayer reflective film.
    Type: Application
    Filed: September 15, 2021
    Publication date: October 5, 2023
    Applicant: HOYA CORPORATION
    Inventor: Masanori NAKAGAWA
  • Patent number: 11650494
    Abstract: The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.
    Type: Grant
    Filed: January 13, 2022
    Date of Patent: May 16, 2023
    Assignee: HOYA CORPORATION
    Inventors: Masanori Nakagawa, Hirofumi Kozakai
  • Publication number: 20230133304
    Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device, having high resistance to an etching gas used for etching an absorber film and/or an etching mask film and capable of suppressing occurrence of blister. A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 formed on the substrate 10, and a protective film 14 formed on the multilayer reflective film 12. The protective film 14 comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf).
    Type: Application
    Filed: March 22, 2021
    Publication date: May 4, 2023
    Applicant: HOYA CORPORATION
    Inventors: Kota SUZUKI, Masanori NAKAGAWA, Takahiro ONOUE
  • Publication number: 20230072220
    Abstract: Provided is a substrate with a multilayer reflective film capable of sufficiently reducing a reflectance of the multilayer reflective film with respect to EUV exposure light and preventing occurrence of a phenomenon in which a surface of a protective film on the multilayer reflective film swells and a phenomenon in which the protective film peels off. A substrate with a multilayer reflective film 110 comprises a multilayer reflective film 5 and a protective film 6 in this order on a main surface of a substrate 1. The substrate 1 contains silicon, titanium, and oxygen as main components, and further contains hydrogen. The multilayer reflective film 5 has a structure in which a low refractive index layer and a high refractive index layer are alternately layered. The multilayer reflective film 5 comprises hydrogen. Hydrogen in the multilayer reflective film 5 has an atomic number density of 7.0×10?3 atoms/nm3 or less.
    Type: Application
    Filed: March 11, 2021
    Publication date: March 9, 2023
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Kota SUZUKI, Takashi UCHIDA
  • Patent number: 11561463
    Abstract: A substrate with a conductive film for manufacturing a reflective mask which has a rear-surface conductive film with high mechanical strength and is capable of correcting positional deviation of the reflective mask from the rear surface side by a laser beam or the like. A substrate with a conductive film has a conductive film formed on one surface of a main surface of a mask blank substrate used for lithography, wherein the conductive film includes a transparent conductive layer provided on a substrate side and an upper layer provided on the transparent conductive layer, the conductive film has a transmittance of 10% or more for light of wavelength 532 nm, the upper layer is made of a material including tantalum (Ta) and boron (B), and the upper layer has a film thickness of 0.5 nm or more and less than 10 nm.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: January 24, 2023
    Assignee: HOYA CORPORATION
    Inventors: Masanori Nakagawa, Tsutomu Shoki
  • Publication number: 20220342293
    Abstract: Provided is a substrate with a multilayer reflective film, the substrate being used for manufacturing a reflective mask blank and a reflective mask each having a multilayer reflective film having a high reflectance to exposure light and a low background level during defect inspection. A substrate with a multilayer reflective film 110 comprises a substrate 1 and a multilayer reflective film 5. The multilayer reflective film 5 is formed of a multilayer film in which a low refractive index layer and a high refractive index layer are alternately layered on the substrate 1. The multilayer reflective film 5 comprises at least one additive element selected from hydrogen (H), deuterium (D), and helium (He). The additive element in the multilayer reflective film 5 has an atomic number density of 0.006 atom/nm3 or more and 0.50 atom/nm3 or less.
    Type: Application
    Filed: September 23, 2020
    Publication date: October 27, 2022
    Applicant: HOYA CORPORATION
    Inventor: Masanori NAKAGAWA
  • Publication number: 20220283490
    Abstract: A substrate with a conductive film for manufacturing a reflective mask, the substrate comprising a conductive film having excellent chemical resistance and a small surface roughness (Rms), is obtained. A substrate with a conductive film comprises a conductive film on one of two main surfaces of the substrate. The conductive film comprises chromium. The conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side. The lower layer is amorphous. The upper layer has a crystallinity.
    Type: Application
    Filed: July 13, 2020
    Publication date: September 8, 2022
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Takashi UCHIDA
  • Publication number: 20220244630
    Abstract: Provided is a substrate with a thin film comprising a thin film having excellent chemical resistance. A substrate with a thin film comprises a thin film on at least one of two main surfaces of the substrate. The thin film comprises chromium. When a diffracted X-ray intensity with respect to a diffraction angle 2? is measured by an X-ray diffraction method using a CuK? ray for the thin film, a peak is detected in a range where the diffraction angle 2? is 56 degrees or more and 60 degrees or less.
    Type: Application
    Filed: June 10, 2020
    Publication date: August 4, 2022
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Takashi UCHIDA
  • Publication number: 20220229357
    Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank (100) comprises a substrate (1), a multilayer reflection film (2) on the substrate, and an absorber film (4) on the multilayer reflection film. The reflective mask blank (100) is characterized in that: the absorber film (4) includes an absorption layer (42) and a reflectance adjustment layer (44); the absorption layer (42) contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer (42) includes a lower surface region (46) including a surface on the substrate side, and an upper surface region (48) including a surface on the side opposite to the substrate; and the concentration (at.
    Type: Application
    Filed: June 18, 2020
    Publication date: July 21, 2022
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Tsutomu SHOKI
  • Publication number: 20220206379
    Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas. A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.
    Type: Application
    Filed: June 18, 2020
    Publication date: June 30, 2022
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Tsutomu SHOKI
  • Publication number: 20220137501
    Abstract: The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.
    Type: Application
    Filed: January 13, 2022
    Publication date: May 5, 2022
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Hirofumi KOZAKAI
  • Patent number: 11256167
    Abstract: The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: February 22, 2022
    Assignee: HOYA CORPORATION
    Inventors: Masanori Nakagawa, Hirofumi Kozakai
  • Patent number: 11154220
    Abstract: An information processing apparatus includes a processor, in communication with a memory, executing a process including acquiring identification information of a wireless device and information for identifying a position of the wireless device; storing a learned model generated by performing machine learning by using a training dataset including a position of a person to which the wireless device is attached and a movement destination of the person to which the wireless device is attached; inferring the movement destination of the person to which the wireless device is attached from the position of the wireless device, based on the learned model; and reporting the inferred movement destination.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: October 26, 2021
    Assignee: Ricoh Company, Ltd.
    Inventors: Ryu Taniguchi, Masanori Nakagawa