Abstract: A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.

Abstract: A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.

Abstract: A semiconductor device includes: a semiconductor (10 ?m?tsi?30 ?m); a metal layer (30 ?m?tag?60 ?m) comprising Ag; a metal layer (10 ?m?tni?35 ?m) comprising Ni; and transistors. The transistors include a source electrode and a gate electrode on the semiconductor layer. The metal layer functions as a common drain region for the transistors. The ratio of the lengths of the longer side and the shorter side of the semiconductor layer is at most 1.73. The ratio of the surface area and the perimeter length of each electrode included in the source electrode is at most 0.127. The cumulative surface area of the source electrode and the gate electrode is at most 2.61 mm2. The length of the shorter side of the source electrode is at most 0.3 mm, and 702<2.33×tsi+10.5×tag+8.90×tni<943 is satisfied.

Abstract: A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.

Abstract: A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.

Abstract: A semiconductor device includes: a semiconductor (10 ?m?tsi?30 ?m); a metal layer (30 ?m?tag?60 ?m) comprising Ag; a metal layer (10 ?m?tni?35 ?m) comprising Ni; and transistors. The transistors include a source electrode and a gate electrode on the semiconductor layer. The metal layer functions as a common drain region for the transistors. The ratio of the lengths of the longer side and the shorter side of the semiconductor layer is at most 1.73. The ratio of the surface area and the perimeter length of each electrode included in the source electrode is at most 0.127. The cumulative surface area of the source electrode and the gate electrode is at most 2.61 mm2. The length of the shorter side of the source electrode is at most 0.3 mm, and 702<2.33×tsi+10.5×tag+8.90×tni<943 is satisfied.