Patents by Inventor Masao Kawamura

Masao Kawamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4769639
    Abstract: A liquid crystal drive circuit includes a first buffer circuit for outputting a selection high level segment voltage V0' using a nonselection high level common voltage V1 from a common voltage generator as a reference, and a first operational amplifier for outputting a nonselection high level segment voltage V2' having an inverted voltage level of the selection high level segment voltage. The liquid crystal drive circuit also includes a second buffer circuit for outputting a selection low level segment voltage V5' using a nonselection low level common voltage V4 as a reference, and an operational amplifier for outputting a nonselection low level segment voltage V3' having an inverted voltage level of the nonselection low level segment voltage.
    Type: Grant
    Filed: July 31, 1986
    Date of Patent: September 6, 1988
    Assignee: Casio Computer Co., Ltd.
    Inventors: Masao Kawamura, Minoru Usui, Saburo Kobayashi
  • Patent number: 4746963
    Abstract: A semiconductor device employing a new isolation process is disclosed, wherein an isolation area is a region in which a burying material is buried in a deep groove formed in a semiconductor body with a substantially constant width by anisotropic dry etching, semiconductor elements are formed in selected ones of semiconductor regions isolated by the isolation area, and others of the semiconductor regions, with no semiconductor element formed therein, have their whole surface covered with a thick oxide film which is produced by the local oxidation of the semiconductor body. The new isolation process is well-suited for a bipolar type semiconductor device, wherein the deep groove is formed so as to reach a semiconductor substrate through an N.sup.+ -type buried layer, and a thick oxide film formed simultaneously with the aforementioned thick oxide film isolates the base region and collector contact region of a bipolar transistor.
    Type: Grant
    Filed: December 29, 1986
    Date of Patent: May 24, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Akihisa Uchida, Daisuke Okada, Toshihiko Takakura, Katsumi Ogiue, Yoichi Tamaki, Masao Kawamura
  • Patent number: 4740578
    Abstract: A process for producing polythiobisphenols which comprises: reacting a phenol having the general formula ##STR1## wherein each R independently represents a hydrogen, a halogen or an alkyl, with sulfur monochloride in a polar organic solvent in the presence of a nitrogen-containing organic compound as a catalyst which is selected from the group consisting of tertiary amines, quaternary ammoniums, alkylated acid amides and heteroaromatic compounds, in amounts of about 1-30% by weight based on the amount of the phenol used. As a catalyst, bromine or an alkali metal halide is also usable.A novel process for producing mercaptophenols by the hydrogenolysis of polythiobisphenols in the presence of a nickel catalyst is also disclosed. Raney nickel catalyst which is in advance poisoned with an organosulfur compound in which the sulfur atom has unshared electron pairs is especially effective as a catalyst.
    Type: Grant
    Filed: March 24, 1986
    Date of Patent: April 26, 1988
    Assignee: Seitetsu Kagaku Co., Ltd
    Inventors: Akira Onoe, Masao Kawamura, Tadaaki Nishi, Kenzo Kobayashi, Masato Yoshikawa
  • Patent number: 4722917
    Abstract: An anti-I sorbent which comprises as I blood group substances at least two materials selected from the group consisting of mucin and milk derived from Eutheria and ovomucoid from Ornithurae. The use of the anti-I sorbent inhibits the formation of false positive agglutination caused by anti-I autoantibody.
    Type: Grant
    Filed: February 7, 1985
    Date of Patent: February 2, 1988
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Taiko Seno, Yasuto Okubo, Masao Kawamura, Seiichi Akutsu, Hirosuke Fukuda
  • Patent number: 4642693
    Abstract: A television video signal A/D converter apparatus in a liquid crystal television receiver has an A/D converter for A/D converting a television video signal. Upper and lower reference potentials for determining an operating voltage amplitude are supplied to the A/D converter from a reference potential generator. The upper and lower reference potentials are divided at a given ratio by a resistor so as to fix an average potential of the television video signal at a constant value using the potential at the dividing point as a bias potential, and thereafter the television video signal is supplied to the A/D converter.
    Type: Grant
    Filed: May 13, 1985
    Date of Patent: February 10, 1987
    Assignee: Casio Computer Co., Ltd.
    Inventors: Takahiro Fuse, Masao Kawamura, Koji Yamagishi, Kazuyuki Odachi, Haruo Ono, Masaharu Kizaki
  • Patent number: 4642694
    Abstract: A television video signal A/D converter apparatus has an A/D converter which samples a television video signal to A/D convert it in accordance with upper and lower reference potentials, and supplies the digital signals to a liquid crystal display device. The apparatus also has detectors which detect digital values of the digital signals from the A/D converter which exceed a predetermined value and are below another predetermined value, and which respectively correspond to the upper and lower reference potentials for A/D conversion by the A/D converter. The digital values exceeding and below the predetermined values are counted by a counter, and the upper and lower reference potentials are determined in accordance with the respective counts and are supplied to the A/D converter.
    Type: Grant
    Filed: May 13, 1985
    Date of Patent: February 10, 1987
    Assignee: Casio Computer Co., Ltd.
    Inventors: Koji Yamagishi, Takahiro Fuse, Masao Kawamura, Shinichi Matsui
  • Patent number: 4604349
    Abstract: A process for preparing uridine diphosphate-N-acetylgalactosamine, which comprises treating a reaction solution obtained by the enzymatic conversion of uridine diphosphate-N-acetylglucosamine to uridine diphosphate-N-acetylgalactosamine, with uridine diphosphate-N-acetylglucosamine pyrophosphorylase to decompose the remaining uridine diphosphate-N-acetylglucosamine in the solution and then separating therefrom the uridine diphosphate-N-acetylgalactosamine for purification. In one aspect of this invention, it relates to a method for measuring the activity of .alpha.-N-acetylgalactosaminyl transferase characterized by the use of said reaction solution as the substrate for the transferase.
    Type: Grant
    Filed: February 25, 1985
    Date of Patent: August 5, 1986
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Taiko Seno, Yasuto Okubo, Masao Kawamura, Seiichi Akutsu, Hirosuke Fukuda
  • Patent number: 4581654
    Abstract: A portable television reciever of the panel type, having a pocketable size, is provided with about 1/8 the number of scanning electrodes as effective T.V. picture scanning lines, and a panel type picture display device with a double matrix array in which two picture element electrodes lying on each of the signal electrodes commonly provided in the direction of the width of said scanning electrodes are disposed in opposition to each other. A display circuit is driven at a duty cycle expressed as follows: ##EQU1## where A is the number of fields constituting one frame, B is the number of horizontal periods for a video signal assigned to a scanning electrode; and C is the number of scanning lines.
    Type: Grant
    Filed: July 26, 1983
    Date of Patent: April 8, 1986
    Assignee: Casio Computer Co., Ltd.
    Inventors: Saburo Kobayashi, Nobol Yabe, Shunji Kashiyama, Masao Kawamura, Takahiro Fuse, Yukinori Hirasawa
  • Patent number: 4569909
    Abstract: A process for preparing uridine diphosphate-N-acetylgalactosamine, which comprises treating a reaction solution obtained by the enzymatic conversion of uridine diphosphate-N-acetylglucosamine to uridine diphosphate-N-acetylgalactosamine, with uridine diphosphate-N-acetylglucosamine pyrophosphorylase to decompose the remaining uridine diphosphate-N-acetylglucosamine in the solution and then separating therefrom the uridine diphosphate-N-acetylgalactosamine for purification. In one aspect of this invention, it relates to a method for measuring the activity of .alpha.-N-acetylgalactosaminyl transferase characterized by the use of said reaction solution as the substrate for the transferase.
    Type: Grant
    Filed: June 1, 1983
    Date of Patent: February 11, 1986
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Taiko Seno, Yasuto Okubo, Masao Kawamura, Seiichi Akutsu, Hirosuke Fukuda
  • Patent number: 4273941
    Abstract: A process for producing p-hydroxybenzaldehyde through p-aminobenzaldehyde from p-nitrotoluene, comprising reacting p-nitrotoluene with sodium polysulphide in an alcohol-alkali aqueous solution mixed solvent in the presence or absence of an aprotic polar compound to produce p-aminobenzaldehyde, diazotizing the p-aminobenzaldehyde and then hydrolyzing the diazotized p-aminobenzaldehyde to produce p-hydroxybenzaldehyde.
    Type: Grant
    Filed: July 6, 1979
    Date of Patent: June 16, 1981
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Masao Kawamura, Tadaaki Nishi, Kunioki Kato, Hiroshi Mizokami, Tadashi Kanazawa
  • Patent number: 4201239
    Abstract: A sealing device is provided for use in a butterfly valve, ball valve or the like wherein a seal ring is provided which forms a seal in co-operation with a rotating valve member, in which the seal is held in position by an annular pressure member which is impelled towards the body of the valve by springs, and whose inner periphery is adapted to form an emergency seal in co-operation with the valve member, should the seal itself be damaged or destroyed by fire.
    Type: Grant
    Filed: February 21, 1978
    Date of Patent: May 6, 1980
    Assignee: Kitamura Valve Seizo Kabushiki Kaisha
    Inventor: Masao Kawamura
  • Patent number: 4195041
    Abstract: A process for producing p-hydroxybenzaldehyde through p-aminobenzaldehyde from p-nitrotoluene, comprising reacting p-nitrotoluene with sodium polysulphide in an alcohol-alkali aqueous solution mixed solvent in the presence or absence of an aprotic polar compound to produce p-aminobenzaldehyde, diazotizing the p-aminobenzaldehyde and then hydrolyzing the diazotized p-aminobenzaldehyde to produce p-hydroxybenzaldehyde.
    Type: Grant
    Filed: August 30, 1978
    Date of Patent: March 25, 1980
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Masao Kawamura, Tadaaki Nishi, Kunioki Kato, Hiroshi Mizokami, Tadashi Kanazawa
  • Patent number: 4124646
    Abstract: Industrially useful alkylphenyl sulfides are produced in high yield from phenyl mercaptan as a raw material by reaction of the phenyl mercaptan with an alkyl alcohol or dialkyl ether, or alkyl mercaptan or dialkyl sulfide having 1 to 4 carbon atoms as a novel alkylating agent at an elevated temperature, for example, 150.degree. to 600.degree. C, in a gaseous phase.
    Type: Grant
    Filed: November 1, 1976
    Date of Patent: November 7, 1978
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Masao Kawamura, Masakazu Hatta, Nobuhiro Koune, Nobuyuki Kitagishi
  • Patent number: 4054499
    Abstract: Pyridine is reacted with chlorine at a molar ratio of pyridine to chlorine of 0.5-10 : 1 in a gaseous phase in the presence of at least 0.2 moles, preferably 1 to 20 moles of steam per mole of pyridine under irradiation of ultraviolet rays of 2000-5000 A, thereby producing 2-chloropyridine.
    Type: Grant
    Filed: March 4, 1976
    Date of Patent: October 18, 1977
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Masao Kawamura, Tadaaki Nishi, Hiro Tsuchiya, Syuzi Takagi
  • Patent number: 4017881
    Abstract: In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.
    Type: Grant
    Filed: September 11, 1975
    Date of Patent: April 12, 1977
    Assignee: Hitachi, Ltd.
    Inventors: Yuichi Ono, Kazuhiro Kurata, Masao Kawamura, Makoto Morioka, Kazuhiro Ito
  • Patent number: 4016829
    Abstract: In order to eliminate non-uniformity in the temperature within the plane of a substrate that causes dispersions or variations in the characteristics of a grown layer during liquid phase epitaxial growth and to produce a grown layer having uniform characteristics, an apparatus for crystal growth according to the invention holds a substrate on a jig so that a flat surface of the substrate is arranged tangentially to an isothermal plane within the jig and aslant with respect to any position perpendicular or parallel to the axis or the center plane of the jig. Where a multiplicity of substrates are set, they are held on at least two flat surfaces which are tangential to an identical isothermal plane and which have different slopes.
    Type: Grant
    Filed: February 26, 1974
    Date of Patent: April 12, 1977
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhiro Ito, Yuichi Ono, Kiichi Ueyanagi, Makoto Morioka, Masao Kawamura
  • Patent number: 3981764
    Abstract: In an epitaxial growth method in liquid phase for III-V compound semiconductor crystals a solution for crystal growth is at first heated to a temperature which is higher than the temperature of crystal growth, and then cooled to that temperature, whereby a part of the solution crystallizes out as small crystals. This solution is separated by means of a filter means into two parts, one of which contains the small crystals and the other of which does not. A substrate crystal is brought into contact with the latter.
    Type: Grant
    Filed: June 25, 1975
    Date of Patent: September 21, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhiro Ito, Masao Kawamura, Yuichi Ono, Makoto Morioka
  • Patent number: 3969205
    Abstract: Pyridine is reacted with chlorine in the presence of water by photolytic reaction under irradiation of photolytic light, using halogenated hydrocarbon such as carbon tetrachloride as a diluent. When the amount of water added exceeds at least 0.01 moles per one mole of pyridine, an effect of water addition appears, but usually addition of 0.2 to 10 moles, preferably 0.5 to 5 moles of water per one mole of pyridine makes the reaction proceed smoothly without any trouble, and ensures increase in yield and selectivity of 2-chloropyridine. The present process can be carried out in either gaseous or liquid phase.
    Type: Grant
    Filed: December 6, 1974
    Date of Patent: July 13, 1976
    Assignee: Seitetsu Kagaku Co., Ltd.
    Inventors: Masao Kawamura, Tadaaki Nishi, Syuzi Takagi
  • Patent number: 3960618
    Abstract: In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.
    Type: Grant
    Filed: March 25, 1975
    Date of Patent: June 1, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Masao Kawamura, Kazuhiro Ito, Makoto Morioka, Yuichi Ono, Sachio Ishioka, Kazuhiro Kurata