Abstract: (Problem) To provide a source liquid supply apparatus that avoids leaving source liquid- and/or cleaning fluid-derived residues in the vicinity of the joint or connection region between the source liquid feed conduit and the source tank. (Solution) A flow-switching mechanism Vc is attached to the source tank 22 of a source liquid supply apparatus 20. This flow-switching mechanism Vc has a first port 33 that is connected to the discharge port conduit 24 of the source tank 22, a second port 34 that is connected to a feed conduit 16, and a third port 35 that is connected to an exhaust conduit 25. The first port 33 can be closed by a valve member 43 on a diaphragm 42 disposed within a common compartment 38 while communication is maintained between the second and third ports 34 and 35. A cleaning fluid source 55 and a purge gas source 57 are connected to the feed conduit 16.

Abstract: A solid-state imaging device includes sensor areas, in each of the sensor areas, a plurality of pixel sensors are disposed in the vertical direction and in the horizontal direction. Two vertical transfer portions are formed across each pixel column including the plurality of pixel sensors in the vertical direction. A controller controls electric charges stored in the pixel sensors vertically adjacent to each other in each pixel column to be simultaneously read in different directions by the two vertical transfer portions, and also controls each of the two vertical transfer portions to add and transfer electric charges for the plurality of pixel sensors. With this configuration, the time required for a vertical transfer operation can be decreased, and the frame rate of the solid-state imaging device can be improved.

Abstract: A solid state imaging device with a high sensitivity is obtained by introducing an incident light to be incident on a light receiving portion widely. In the solid state imaging device, a layer (8) having a concave lens structure is provided in a portion from a sensor opening to an upper most surface layer and a well-shaped dug structure (21) is provided at a bottom portion of the concave lens structure.

Abstract: Provided is a method for preparing a fluid containing size-controlled particles that is optimized with respect to use of a target fluid as a matrix fluid under conditions approximating actual conditions. In a preferred embodiment, size-controlled SiO2 particles are obtained by mixing and dispersing SiO2 starting particles having various sizes in a N2 carrier gas followed by fractionation with a fractionator. The size-controlled particles are electrostatically collected by a porous member from the carrier gas flow. Ultrasonic vibrations are then applied to the porous member while a HCl matrix fluid flows through the porous member loaded with the size-controlled particles. This causes release of the size-controlled particles from the porous member and their admixture and dispersion into the HCl matrix fluid.

Abstract: Provided is a safe method for qualifying the cylinder valves on gas cylinders, which method can also clean the cylinder valve when necessary. Compressed gas residing in a gas cylinder is discharged through the flow path of a cylinder valve with the cylinder valve on the gas cylinder in an open position. During this process ultrasound vibrations from the generator are applied to the cylinder valve and the number of particles in the outflowing gas is counted by a detector. The cleanliness of the cylinder valve is evaluated based on the detected value of the number of particles provided by the detector. When the detected value exceeds a standard value, the application of ultrasound vibrations, counting of the number of particles, and evaluation of the cleanliness are repeated until the detected value reaches or falls below the standard value.

Abstract: A process for reducing corrosion in a gas distribution network of ultra high purity gas or any part of said distribution network, including:(a) Wet cleaning the gas distribution network or at least one part thereof with a wet cleaning agent,(b) Liquid drying the gas distribution network or the at least one part thereof with an H.sub.2 O desorbing liquid drying agent selected from the group consisting of acetone dimethylacetal DMP, 2.2 dichloropropane DCP or 2.2 dibromopropane DBP, mixtures thereof and any equivalent thereof,(c) purging said gas distribution network or any part thereof with a dry high purity gas comprising less than 1 ppm of any impurity, and(d) evacuating the gas distribution network or any part thereof at a pressure which is lower than 5.times.10.sup.4 Pascal(e) exposing the gas distribution network or any part thereof to an atmosphere including an ultra high purity corrosive gas or air.

Abstract: A resin-coated, bonding fine wire for use in forming bonded electrical connections on a semiconductor device, wherein the bonding wire comprises an elongated fine wire of electrically conductive material, and first and second non-conductive coating layers. The first non-conductive coating layer covers the elongated fine wire and is of a material having good insulating property and heat resistance. The second non-conducting coating layer covers the first non-conductive coating layer and is of a material having good abrasion resistance. The first non-conductive coating layer includes at least one aromatic polyester resins, and the second non-conductive coating layer includes at least one resin selected from the group consisting of polyurethanes, polyester imides and polyimides. The second non-conductive coating layer is built up from a plurality of successive coats to define the second non-conductive coating layer as a non-conductive multilayer coating structure.

Abstract: Disclosed are an insulation film covered bonding wire comprising a conductive metal core wire the circumference of which is coated with an insulation film of an at least one type composed of polymer resin materials selected from a group of aromatic polyesters, polyimides, polyether-ether ketones, polyamides, polysulfones, and liquid crystal polymers, wherein no crack is developed to the insulation film when an impact force of 1 cm.g is applied to the coated wire by a drop weight, a method of manufacturing the bonding wire, and a semiconductor device using the same.

Abstract: This invention relates to TiAl based intermetallic compound alloy and process for producing; the object of this invention is to improve high temperature deformability. The alloy comprises basic components: Ti.sub.y AlCr.sub.x, wherein 1%.ltoreq.X.ltoreq.5%, 47.5%.ltoreq.Y.ltoreq.52%, and X+2Y.gtoreq.100%, and comprises a fine-grain structure with a .beta. phase precipitated on a grain boundary of equiaxed .gamma. grain having grain size of less than 30 .mu.m, and possessing a superplasticity such that the strain rate sensitivity factors (m value) is 0.40 or more and tensile elongation is 400% or more tested at 1200.degree. C. and a strain rate of 5.times.10.sup.-4 S.sup.-1.

Abstract: A process is disclosed for preparing of aromatic polyester-polystyrene block copolymers which comprises subjecting preferentially styrene polymers (A) having terminal functional groups reactive with acid chloride groups and an excess of aromatic dicarboxylic acid dihalides (C) to condensation and then subjecting continuously the resultant mixture and aromatic dihydroxy compounds (B) to interfacial polymerization at the ratio (A)/[(B)+(C)] by weight of 5/95 to 80/20, without separating reaction products of styrene polymers (A) and aromatic dicarboxylic acid dihalides (C), and the block copolymers thus prepared contain a small amount of uncopolymerized styrene polymers, have long aromatic polyester segments, show low birefringence, good transparency, exceptionally low birefringence, low melt viscosity, and good mechanical strength, and are particularly useful as materials for optical instruments.

Abstract: The present invention provides a Ti--Al intermetallic compound sheet of a thickness in the range of 0.25 to 2.5 mm formed of a Ti--Al intermetallic compound of 40 to 53 atomic percent of Ti, 0.1 to 3 atomic percent of at least one of material selected from the group consisting of Cr, Mn, V and Fe, and the balance of Al, and a Ti--Al intermetallic compound sheet producing method comprising the steps of pouring a molten Ti--Al intermetallic compound of the foregoing composition into the mold of a twin drum continuous casting machine, casting and rapidly solidifying the molten Ti--Al intermetallic compound to produce a thin cast plate of a thickness in the range of 0.25 to 2.5 mm and, when necessary, subjecting the thin cast plate to annealing and HIP treating. The Ti--Al intermetallic compound sheet has excellent mechanical and surface properties.

Abstract: A process is disclosed for the preparation of aromatic polyester-polystyrene block copolymers by solution polycondensation of styrene polymers (A) having terminal functional groups reactive with acid halide or hydroxyl groups, aromatic dihydroxy compounds (B), and aromatic dicarboxylic acid dihalides (C) at (A)/[(B)+(C)] (by weight) of 5/95 to 80/20 and the polymers are suitable as molding materials for optical instruments for their good transparency, particularly low birefringence, low melt viscosity, and good mechanical strength.

Abstract: Heat-resistant resin compositions with an excellent pearly luster of this invention consist essentially of polycarbonates prepared from bisphenol A or its derivatives of the following general formula (I) ##STR1## in which R is hydrogen, a halogen, or a lower alkyl group and methyl methacrylate-.alpha.-methylstyrene copolymers with a weight average molecular weight of 30,000 to 200,000 and are useful for molding industrial articles requiring heat resistance.

Abstract: This invention relates to TiAl based intermetallic compound alloy and process for producing; the object of this invention is to improve high temperature deformability. The alloy comprises basic components: Ti.sub.y AlCr.sub.x, wherein 1%.ltoreq.X.ltoreq.5%, 47.5%.ltoreq.Y.ltoreq.52%, and X+ 2Y.gtoreq.100%, and comprises a fine-grain structure with a .beta. phase precipitated on a grain boundary of equiaxed .gamma. grain having grain size of less than 30 .mu.m, and possessing a superplasticity such that the strain rate sensitivity factors (m value) is 0.40 or more and tensile elongation is 400% or more tested at 1200.degree. C. and a strain rate of 5.times.10.sup.-4 S.sup.-1.

Abstract: An air supplying apparatus for supplying a clean room with air having a conditioned cleanliness, temperature and/or humidity includes an air control unit for discharging the controlled air, and an air outlet duct connected to an air outlet of the air control unit so as to receive the conditioned air from the air control unit through an opening which opens in a direction different from the direction of flow of air through the air control unit. The air outlet duct is formed from one or more perforated sheets having a multiplicity of air outlet apertures. The cross-sectional area of the air passage formed in the air outlet duct preferably progressively decreases towards the downstream end of the duct. A joint duct, which guides air in a direction different from the directions of flow of air through the air control unit and through the air outlet duct, may be connected between the air control unit and the air outlet duct.

Abstract: The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.

Abstract: Molding materials of this invention comprise copolymers consisting essentially of 10 to 30% by weight of .alpha.-methylstryene units. 40 to 70% by weight of methyl methacrylate and 10 to 30% by weight of stryene units with a weight average molecular weight in the range from 50,000 to 200,000, a melt flow rate (MFR) in the range from 4 to 18 g./10 min. at 220.degree. C. under a 10-kg load, and a Vicat softening point of 130.degree. C. or more, show a high degree of transparency, good heat and weather resistance and good moldability and are best suited for such uses as automotive and electrical parts.

Abstract: A method of injection molding a styrene resin or a composition thereof, which includes injection molding a molten molding resin material of a styrene-conjugated diene block copolymer containing 50 to 90% by weight of a styrene polymer or a molten molding resin material of a resin composition comprising 50% by weight or more of the styrene-conjugated diene block copolymer and 50% by weight or less of a styrene resin other than the styrene-conjugated diene block copolymer, wherein the molten resin is injected and filled into a mold with a wall surface temperature at core and cavity portions within the mold being made 110.degree. to 180.degree. C., and the molded product is demolded when the wall surface temperature of the core and cavity portions is lowered to the glass transition temperature or lower of the styrene polymer moiety in the block copolymer. The obtained molded product has a high impact resistance.

Abstract: A thin copper film is formed by CVD, by (a) forming a gas stream containing a copper halide, followed by introducing said gas stream into a CVD reaction chamber having a heated catalytic metal filament arranged herein, (b) introducing hydrogen gas into the CVD reaction chamber for activation of said hydrogen gas by the heated catalytic metal filament, and (c) carrying out the reaction between the copper halide contained in the gas stream introduced in step (a) and the hydrogen activated in step (b) near the surface of a substrate arranged within the CVD reaction chamber so as to deposit a thin copper film of copper on the substrate surface.

Abstract: The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C.