Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

Abstract: An object of the present invention is to provide a tube which can be easily torn and has a large heat-shrinkability at a low temperature. The tube of the present invention is a heat-shrinkable tube having tearability, including a mixture of a fluorine resin and a different kind of resin from the fluorine resin, in which an amount of change in loss energy, ?E loss, with change in temperature from 175° C. to 185° C. is a positive value.

Abstract: A terahertz-wave detector having a thermal separation structure in which a temperature detection unit 14 including a bolometer thin film 7 connected to electrode wiring 9 is supported so as to be lifted above a substrate 2 by a support part 13 including the electrode wiring 9 connected to a reading circuit 2a formed on the substrate 2, wherein the terahertz-wave detector is provided with a reflective film 3 that is formed on the substrate 2 and reflects terahertz waves and an absorption film 11 that is formed on the temperature detection unit 14 and absorbs terahertz waves and the reflective film 3 is integrally formed with the reflective film of an adjacent terahertz-wave detector.

Abstract: An object of the present invention is to provide a tube which can be easily torn and has a large heat-shrinkability at a low temperature. The tube of the present invention is a heat-shrinkable tube having tearability, including a mixture of a fluorine resin and a different kind of resin from the fluorine resin, in which an amount of change in loss energy, ?E loss, with change in temperature from 175° C. to 185° C. is a positive value.

Abstract: An object of the present invention is to provide a tube which can be easily torn and has a large heat-shrinkability at a low temperature. The tube of the present invention is a heat-shrinkable tube having tearability, including a mixture of a fluorine resin and a different kind of resin from the fluorine resin, in which an amount of change in loss energy, ?E loss, with change in temperature from 175° C. to 185° C. is a positive value.

Abstract: An object of the present invention is to provide a tube which can be easily torn and has a large heat-shrinkability at a low temperature. The tube of the present invention is a heat-shrinkable tube having tearability, including a mixture of a fluorine resin and a different kind of resin from the fluorine resin, in which an amount of change in loss energy, ?E loss, with change in temperature from 175° C. to 185° C. is a positive value.

Abstract: The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 ?m.

Abstract: The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 ?m.

Abstract: An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly. A plurality of gold or gold alloy columns is formed on the layer. The columns are etched scarcely by the etching liquid. The etching liquid etches the gold or gold alloy layer existing between the columns evenly. The etching liquid may further contain a surfactant.

Abstract: In a method of etching a semiconductor device or a liquid crystal device, an etching liquid is prepared to include a solvent, and a solute containing at least iodine, at least one iodine compound and alcohol. The etching liquid is applied to a substrate of the semiconductor device or the liquid crystal device having plural gold columns on a gold layer or gold alloy columns on a gold alloy layer.

Abstract: An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly. A purality of gold or gold alloy columns are formed on the layer. The columns are etched scarcely by the etching liquid. The etching liquid etches the gold or gold alloy layer existing between the columns evenly. The etching liquid may further contain a surfactant.

Abstract: A resin composition is provided which composition comprises 100 parts by weight of (A) polyarylene sulfide, and 0.01 to 5.0 parts by weight of (B) a product compound of an element selected from the group consisting of group IIA and group IIB of the periodic table, wherein said product compound has such alkalinity that a mixture of said product compound with a 20-fold weight of ultrapure water of grade A4 specified in the Japanese Industrial Standards (JIS) K0557 has a pH of from 10.0 to 12.0. The composition is particularly suited to be used for an optical instrument part such as an object lens driving unit and the like.

Abstract: A polyarylene sulfide in which a ratio of terminal --SX groups to a total of the terminal --SX groups and --SZn-- groups is less than 20 mole %, wherein X represents an alkali metal or a hydrogen atom, and which has a melt viscosity, V.sub.6 of 100 to 2,000 poises.Also disclosed are a composition comprising 100 parts of the above polyarylene sulfide, 0.01 to 20 parts of zeolite and 0.01 to 20 part of silica, and a process for the preparation of the above polyarylene sulfide.