Abstract: An inside regular filler layer is disposed inside a pipe where heat is exchanged between an inside and an outside of a pipe wall so as to abut an inner peripheral surface of the pipe, and an outside regular filler layer is disposed outside the pipe so as to surround the pipe and closely contact an outer peripheral surface of the pipe. The outer peripheral surface of the pipe is subjected to close contact-promoting processing in order to enhance close contacting feature between the outer peripheral surface and the outside regular filler layer. The pipe/filler unit is used for the distillation section of an internal heat exchanging type distillation column.

Abstract: Provided is a heat integrated distillation apparatus includes: rectifying column including a trayed section or a packed bed section; stripping column including a trayed section or a packed bed section located higher than rectifying column; first pipe for connecting top part of the stripping column with bottom part of the rectifying column; and compressor that compresses vapor from top part of the stripping column to feed the compressed vapor to bottom part of the rectifying column. The heat integrated distillation apparatus further includes: heat exchanger located either at the trayed section or a packed bed section of rectifying column or at the trayed section or a packed bed section of stripping column; second pipe; and third pipe for circulating fluids through the heat exchanger.

Abstract: Provided is a heat integrated distillation apparatus in which energy efficiency and a degree of freedom in design is higher than a normal distillation column, and in which maintenance of the apparatus is simple. The heat integrated distillation apparatus includes: rectifying column (1); stripping column (2) located higher than rectifying column (1); first pipe (23) for connecting top part (2c) of the stripping column with bottom part (1a) of the rectifying column; and compressor (4) that compresses vapor from top part (2c) of the stripping column to feed the compressed vapor to bottom part to (1a) of the rectifying column.

Abstract: A mesoporous silica thick-film comprising a layer of mesoporous silica formed in a thickness of 10 ?m to 1 mm, and a process for producing a mesoporous silica thick-film, which comprises disposing a substrate in a solution containing mesoporous silica suspended therein and subsequently applying a voltage thereby to form a film having a thickness of 10 ?m to 1 mm by the electrophoretic deposition of the mesoporous silica on a surface of the substrate is provided.

Abstract: An inside regular filler layer is disposed inside a pipe where heat is exchanged between an inside and an outside of a pipe wall so as to abut an inner peripheral surface of the pipe, and an outside regular filler layer is disposed outside the pipe so as to surround the pipe and closely contact an outer peripheral surface of the pipe. The outer peripheral surface of the pipe is subjected to close contact-promoting processing in order to enhance close contacting feature between the outer peripheral surface and the outside regular filler layer. The pipe/filler unit is used for the distillation section of an internal heat exchanging type distillation column.

Abstract: A mesoporous silica thick-film comprising a layer of mesoporous silica formed in a thickness of 10 ?m to 1 mm, and a process for producing a mesoporous silica thick-film, which comprises disposing a substrate in a solution containing mesoporous silica suspended therein and subsequently applying a voltage thereby to form a film having a thickness of 10 ?m to 1 mm by the electrophoretic deposition of the mesoporous silica on a surface of the substrate is provided.

Abstract: A nanoporous inorganic material with high three-dimensional regularity having a large number of fine pores having a nanometer-order size in an inorganic skeleton structure, which has a pore size of 0.5 to 5 nm at a peak of a pore size distribution determined from a nitrogen adsorption isotherm, and a half-width of 1 (2?/degree) or less in an X-ray diffraction peak of a (100) plane.