Abstract: A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO3.

Abstract: A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 ?m and not larger than 30 ?m.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO3.

Abstract: The present invention aims to provide a piezoelectric composition containing a composition represented by formula (5) as the main component, wherein the composition represented by formula (5) contains a first perovskite-type oxide represented by formula (1), a second perovskite-type oxide represented by formula (2), a tungsten bronze-type oxide represented by formula (3) and a third perovskite-type oxide represented by formula (4), (K1-x-yNaxLiy)q(Nb1-zTaz)O3 (1), SrZrO3 (2), Ba(Nb1-wTaw)2O6 (3), (Bi0.5Na0.5)TiO3 and/or (Bi0.5K0.5)TiO3 (4), (1?m?n?p)A+mB+nC+pD (5); in formula (1), 0.20?x?0.80, 0.02?y?0.10, 0.01?z?0.30 and 0.800?q?1.050; in formula (3), 0.01?w?0.30; and in formula (5), A represents the composite oxide represented by formula (1), B represents the composite oxide represented by formula (2), C represents the composite oxide represented by formula (3), D represents the composite oxide represented by formula (4), and 0.04?m?0.07, 0?n?0.010 and 0.001?p?0.020.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

Abstract: A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 ?m and not larger than 30 ?m.

Abstract: The present invention aims to provide a piezoelectric composition containing a composition represented by formula (5) as the main component, wherein the composition represented by formula (5) contains a first perovskite-type oxide represented by formula (1), a second perovskite-type oxide represented by formula (2), a tungsten bronze-type oxide represented by formula (3) and a third perovskite-type oxide represented by formula (4), (K1-x-yNaxLiy)q(Nb1-zTaz)O3 (1), SrZrO3 (2), Ba(Nb1-wTaw)2O6 (3), (Bi0.5Na0.5)TiO3 and/or (Bi0.5K0.5)TiO3 (4), (1-m-n-p)A+mB+nC+pD (5); in formula (1), 0.20?x?0.80, 0.02?0.10, 0.01?z?0.30 and 0.800?q?1.050; in formula (3), 0.01?w?0.30; and in formula (5), A represents the composite oxide represented by formula (1), B represents the composite oxide represented by formula (2), C represents the composite oxide represented by formula (3), D represents the composite oxide represented by formula (4), and 0.04?m?0.07, 0?n?0.010 and 0.001?p?0.020.

Abstract: A piezoelectric element is provided with an element body, which has a pair of principal faces opposed to each other and an end face extending in a direction in which the pair of principal faces are opposed to each other, so as to connect the pair of principal faces, and which is comprised of a piezoelectric ceramic material; a pair of electrodes arranged respectively on the pair of principal faces; and a resin covering an entire area of the end face and arranged so as to make contact with the pair of electrodes. The resin has two edges in the aforementioned direction projecting outward in the aforementioned direction from the respective electrodes.

Abstract: A piezoelectric element is provided with an element body, which has a pair of principal faces opposed to each other and an end face extending in a direction in which the pair of principal faces are opposed to each other, so as to connect the pair of principal faces, and which is comprised of a piezoelectric ceramic material; a pair of electrodes arranged respectively on the pair of principal faces; and a resin covering an entire area of the end face and arranged so as to make contact with the pair of electrodes. The resin has two edges in the aforementioned direction projecting outward in the aforementioned direction from the respective electrodes.

Abstract: Provided is a piezoelectric ceramic composition capable of being sintered at low temperatures and in a low-oxygen reductive atmosphere and capable of attaining a sufficient displacement even at high voltages of 1 kV/mm or more. The piezoelectric ceramic composition includes: a composite oxide, as a main constituent thereof, represented by the following composition formula; Cu and/or Ag, each as a first additive, Cu being included in a content ?, in terms of Cu2O, falling within a range 0<??0.5% by mass and Ag being included in a content ?, in terms of Ag2O, falling within a range 0<??0.4% by mass, in relation to the main constituent; wherein: composition formula: Pba[(Zn1/3Nb2/3)xTiyZrz]O3, where 0.96?a?1.03, 0.005?x<0.05, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1.

Abstract: A powder having a specific surface area of 1.8 to 11.0 m2/g was used as a powder to be sintered. Consequently, the powder has an improved sinterability, so that even by sintering at 1050° C. or lower, further at 1000° C. or lower, a piezoelectric ceramic having a high sintering density and desired piezoelectric properties can be obtained. The piezoelectric ceramic can have a main constituent represented by a composition formula (Pba1Aa2)[(Zn1/3Nb2/3)xTiyZrz]O3, wherein A represents at least one metal element selected from Sr, Ba and Ca, and 0.96?a1+a2?1.03, 0?a2?0.10, x+y+z=1, 0.05?x?0.40, 0.1?y?0.5 and 0.2?z?0.6.

Abstract: Provided is a piezoelectric ceramic with a wider operating temperature range capable of obtaining a larger amount of displacement and being easily sintered, as well as being superior in terms of ultra-low emission, environmental friendliness and ecology. A piezoelectric substrate 1 comprises a composition including a perovskite-type oxide (Na1?x?y?zKxLiyAgz)(Nb1?wTaw)O3 and a tungsten bronze-type oxide M(Nb1?vTav)2O6 (M is an element of Group 2 in the long form of the periodic table of the elements). The values of x, y and z are preferably within a range of 0.1?x?0.9, 0?y?0.2, and 0?z?0.05, respectively. The content of the tungsten bronze-type oxide is preferably 5.3 mol % or less. Thereby, a higher Curie temperature and a larger amount of displacement can be obtained, and sintering can be more easily carried out.

Abstract: Provided is a piezoelectric ceramic composition capable of being sintered at low temperatures and in a low-oxygen reductive atmosphere and capable of attaining a sufficient displacement even at high voltages of 1 kV/mm or more. The piezoelectric ceramic composition includes: a composite oxide, as a main constituent thereof, represented by the following composition formula; Cu and/or Ag, each as a first additive, Cu being included in a content ?, in terms of Cu2O, falling within a range 0<??0.5% by mass and Ag being included in a content ?, in terms of Ag2O, falling within a range 0<??0.4% by mass, in relation to the main constituent; wherein: composition formula: Pba[(Zn1/3Nb2/3)xTiyZrz]O3, where 0.96?a?1.03, 0.005?x<0.05, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1.

Abstract: A piezoelectric ceramic and a piezoelectric device capable of being fired at a low temperature and improving piezoelectric properties are provided. The piezoelectric ceramic and the piezoelectric device includes Pba[(Znb/3Nb2/3)xTiyZrz]O3 (where 0.94?a?1.02, 1<b?3, x+y+z=1, 0.05?x<0.125, 0.275<y?0.5, 0.375<z?0.6) or (Pbe·fMef)[(Zng/3Nb2/3)uTivZrw]O3 (where 0.96?e?1.03, 0.01?f?0.1, 1<g?3, u+v+w=1, 0.05?u<0.125, 0.275<v?0.5, 0.375<w?0.6, and Me indicates Sr, Ba or Ca). When an excessive amount of Zn is included, the firing temperature can be lower, and the piezoelectric properties can be improved.

Abstract: There is provided a piezoelectric ceramic having a wider operating temperature range, being capable of obtaining a larger amount of displacement, being easily sintered, and being superior in terms of low emission, environment and ecology. A piezoelectric substrate (1) includes (1?m?n){(Na1-x-yKxLiy)(Nb1-zTaz)O3}+m{(M1)ZrO3}+n{M2(Nb1-wTaw)2O6} as a main component. M1 and M2 each represent an alkaline-earth metal element, and the values of x, y, m and n are preferably within a range of 0.1?x?0.9, 0?y?0.1, 0<m<0.1 and 0<n?0.01, respectively. Thereby, a higher Curie temperature and a larger amount of displacement can be obtained, and sintering can be more easily performed. At the time of sintering, after (M1) ZrO3 is formed, other materials are mixed.

Abstract: For the purpose of preventing the degradation of the piezoelectric strain properties when Cu is used for internal electrodes, there is provided a piezoelectric ceramic composition including: a composite oxide, as a main constituent thereof, represented by (Pba-bMeb) [(Zn1/3Nb2/3)xTiyZrz]O3 with the proviso that 0.96?a?1.03, 0?b?0.1, 0.05?x?0.15, 0.25?y?0.5, 0.35?z?0.6, and x+y+z=1, and Me represents at least one selected from Sr, Ca and Ba; and at least one selected from Co, Mg, Ni, Cr and Ga as a first additive to the main constituent in a content of 0.5% by mass or less (not inclusive of 0) in terms of oxide, wherein an electrode made of Cu is to be disposed on the piezoelectric ceramic composition.

Abstract: A piezoelectric ceramic composition has as a chief ingredient a composite oxide that has Pb, Ti and Zr as constituent elements. It contains as a first accessory ingredient at least one element selected from the group consisting of Mn, Co, Cr, Fe and Ni in an amount of 0.2 mass % or less excluding 0 mass % in terms of an oxide. As the first accessory ingredient, at least one species selected from the ingredients represented by CuOx, wherein x?0, can be adopted. In this case, the content of the first accessory ingredient is 3.0 mass % or less excluding 0 mass %. The piezoelectric ceramic composition is fired under reducing and firing conditions. The reducing and firing conditions include a firing temperature in the range of 800° C. to 1200° C. and an oxygen partial pressure in the range of 1×10?10 to 1×10?6 atm., for example.