Abstract: An imaging device includes a semiconductor substrate, a first pixel that performs photoelectric conversion, and a first shield. The first pixel includes a first diffusion region that is present in the semiconductor substrate, a first wiring line connected to the first diffusion region, a first transistor, and a first voltage line that makes up at least part of a voltage supply path to a drain or a source of the first transistor. A first signal charge obtained by photoelectric conversion performed by the first pixel flows through the first wiring line. The first signal charge flows into a gate of the first transistor via the first wiring line. Voltages that are different from each other are applied to the first voltage line. A distance between the first voltage line and the first shield is smaller than a distance between the first voltage line and the first wiring line.

Abstract: An imaging device including: pixel cells arranged in a matrix having rows and columns, the pixel cells including first pixel cells and different second pixel cells, each of the pixel cells having: a photoelectric converter that converts incident light into signal charge, a first transistor having a first gate, a first source and a first drain, the first gate coupled to the photoelectric converter, and a second transistor having a second gate, a second source and a second drain, either the first source or the first drain electrically coupled to the photoelectric converter via the second transistor. The imaging device further including a first line coupled to one of the first source and the first drain of each of the first pixel cells; and a second line coupled to one of the first source and the first drain of each of the second pixel cells.

Abstract: An imaging device according to the present disclosure includes a photoelectric converter that converts light into an electric charge; a transfer transistor; a charge accumulation node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the charge accumulation node; a first reset transistor one of a source and a drain of which is coupled to the charge accumulation node; and a second reset transistor one of a source and a drain of which is coupled to the photoelectric converter, wherein one of a source and a drain of the first signal detection transistor is coupled to the other of the source and the drain of the first reset transistor and the other of the source and drain of the second reset transistor.

Abstract: An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.

Abstract: An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode: an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

Abstract: An imaging device including: a pixel including a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion film, the photoelectric conversion film converting light into a charge; a first transistor having a first source, a first drain, a first gate insulating film, and a first gate, one of the first source and the first drain being connected to the pixel electrode; and a second transistor having a second source, a second drain, a second gate insulating film, and a second gate, one of the second source and the second drain being connected to the other of the first source and the first drain without transistor intervention. An effective thickness of the second gate insulting film is smaller than an effective thickness of the first gate insulting film, and the imaging device includes pixels including the pixel, the pixels each including the first and second transistor.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

Abstract: An imaging device comprising: a first pixel cell including a first photoelectric converter generating a first signal, the first photoelectric converter including a first electrode and a first photoelectric conversion region on the first electrode, and a first circuit coupled to the first electrode and detecting the first signal; and a second pixel cell including a second photoelectric converter generating a second signal, the second photoelectric converter including a second electrode and a second photoelectric conversion region on the second electrode, and a second circuit coupled to the second electrode and detecting the second signal. A sensitivity of the first pixel cell is higher than that of the second pixel cell. A circuit configuration of the first circuit is different from that of the second circuit. The first circuit includes a feedback circuit configured to negatively feed back a voltage of the first electrode to the first electrode.

Abstract: A sprinkler head includes a main body, a valve element, a heat-sensitive disassembling unit, a deflector, at least one strut, and a guide ring. The body includes a nozzle from which fire-extinguishing liquid is discharged. The disassembling unit keeps the nozzle closed with the valve element and opens the nozzle through a breakdown action during activation. The deflector has a receiving surface (valve-element supporting portion) and vanes extending from the receiving surface toward the body. The deflector scatters, outward in axis crossing directions of the nozzle, the fire-extinguishing liquid discharged from the nozzle and received by the receiving surface. The least one strut holds the deflector scattering the fire-extinguishing liquid. The guide ring is movable along the at least one strut and between a tip (main-body-side end portion) of the at least one strut and tips of the vanes.

Abstract: An imaging device including: a photoelectric converter including first and second electrodes and a conversion layer therebetween; a voltage supplier; an outputter outputting a signal indicating the potential of the second electrode; and a detector detecting the signal level, in which the change rate of the conversion efficiency of the photoelectric converter with respect to a bias voltage, applied between the electrodes, when the bias voltage is in a first range is greater than when the bias voltage is in a second range greater than the first range, and the voltage supplier, when the detected level is less than a first threshold, causes the potential difference between the electrodes to become a first difference, and, when the detected level is greater than or equal to a second threshold greater than or equal to the first threshold, causes the potential difference to become a second difference greater than the first difference.

Abstract: An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.

Abstract: An imaging device includes: a pixel including a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion fila converting light into a charge, an amplification transistor a first gate of which is connected to the pixel electrode, a reset transistor one of second source and drain of which is connected to the pixel electrode, and a feedback transistor one of third source and drain of which is connected to the other of the second source and drain; and a first voltage supply circuit supplying a first voltage to the counter electrode. The reset transistor has such a characteristic that when a voltage equal to or higher than a clipping voltage is supplied between the second gate and the one of the second source and drain, the reset transistor is turned off. The clipping voltage is lower than the first voltage.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The the circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate.

Abstract: An electronic device including: a photosensitive layer that converts incident light into a signal charge; a first electrode that collects the signal charge; and a first carrier blocking layer between the photosensitive layer and the first electrode. The carrier blocking layer is configured to block a carrier a polarity of which is different from that of the signal charge. Under a first range of biases on the electronic device, the photosensitive layer is configured to generate photocurrent while illuminated. Under a second range of biases on the electronic device, the photosensitive layer is configured to generate lower photocurrent while illuminated compared to under the first range of biases.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, and a photoelectric conversion layer located between the first electrode and the second electrode; a voltage supply circuit applying a bias voltage between the first electrode and the second electrode: an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor configured to output a signal corresponding to a potential of the second electrode; and a detection circuit configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range when the level detected by the detection circuit is greater than or equal to a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range when the level detected by the detection circuit is less than a second threshold value.

Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.

Abstract: An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.