Abstract: A surface emitting element including a semiconductor substrate and a casing. The substrate includes an optical element having a photoelectric conversion function. First and second terminal electrodes are disposed on the substrate. The casing has a depression for accommodating the substrate. Moreover, first and second connection electrodes are formed in the casing. The first and second terminal electrodes are formed so as to protrude from the side surfaces of the substrate. The first and second connection electrodes are formed so as to protrude toward the depression side in the casing. The first terminal electrode and the first connection electrode are in contact with each other, and the second terminal electrode and the second connection electrode are in contact with each other.

Abstract: A cathode electrode, cathode pad electrodes, cathode wiring electrodes, an anode electrode, an anode pad electrode, and an anode wiring electrode are disposed on the surface of a vertical-cavity surface-emitting laser device. A light-emitting-region multilayer portion having active layers sandwiched by clad layers and DBR layers is formed directly below the anode electrode. A region where the light-emitting-region multilayer portion is formed serves as a light-emitting region. The light-emitting region is positioned closer to one end of the first direction than is a suction region onto which a flat collet sucks with respect to the first direction, in such a way that the light-emitting region is substantially in contact with or spaced a predetermined distance from the suction region.

Abstract: Provided are a base substrate made of a semi-insulating semiconductor; an emission region multilayer unit formed on a surface of the base substrate and including each of an N-type semiconductor contact layer, an N-type DBR layer, an active layer, a P-type semiconductor DBR layer, and a P-type semiconductor contact layer; an anode electrode connected to the P-type semiconductor contact layer; and a cathode electrode formed on a surface side of the base substrate and connected to the N-type semiconductor contact layer. The N-type DBR layer is formed of 15 or more pairs of layers with different compositions laminated on each other. Through this configuration, a vertical-cavity surface-emitting laser that can suppress an occurrence of a defect caused by crystal missing arising from the base substrate can be provided at reduced cost.

Abstract: A vertical cavity surface emitting laser includes a base substrate formed by a semi-insulating semiconductor, a light-emitting region multilayer portion including an N-type semiconductor contact layer, an N-type semiconductor multilayer-film reflecting layer, an N-type semiconductor clad layer, an active layer provided with a quantum well, a P-type semiconductor clad layer, a P-type semiconductor multilayer-film reflecting layer, and a P-type semiconductor contact layer, which are formed on the surface of the base substrate sequentially, an anode electrode formed on the surface of the P-type semiconductor contact layer, and a cathode electrode that is connected to the N-type semiconductor clad layer. The cathode electrode is formed on the base substrate at the side of the light-emitting region multilayer portion. A groove is formed among respective vertical cavity surface emitting lasers.

Abstract: A cathode electrode, cathode pad electrodes, cathode wiring electrodes, an anode electrode, an anode pad electrode, and an anode wiring electrode are disposed on the surface of a vertical-cavity surface-emitting laser device. A light-emitting-region multilayer portion having active layers sandwiched by clad layers and DBR layers is formed directly below the anode electrode. A region where the light-emitting-region multilayer portion is formed serves as a light-emitting region. The light-emitting region is positioned closer to one end of the first direction than is a suction region onto which a flat collet sucks with respect to the first direction, in such a way that the light-emitting region is substantially in contact with or spaced a predetermined distance from the suction region.

Abstract: A luminous element with a high luminous efficiency comprising means for condensing light towards an exit window of the element. Specifically, the luminous element condenses light generated at the luminous area of the luminous element by an optically reflective surface having oblique concentric surface portions.