Patents by Inventor Masashi Yoshimura

Masashi Yoshimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210294096
    Abstract: A display with a plurality of display elements each composed of an uneven layer having an uneven structure and a multilayer film layer provided on the uneven structure. A pattern formed by convexities can be divided into shape elements each arranged in each of a plurality of virtual rectangles, when viewed from a direction facing the uneven layer, and each of the shape elements arranged in each of the virtual rectangles is inscribed in the rectangle in which the shape element is arranged. The plurality of virtual rectangles each have sides along a first direction and sides along a second direction orthogonal to the first direction, and a length of the side along the first direction is less than or equal to a sub wavelength.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 23, 2021
    Applicant: TOPPAN PRINTING CO.,LTD.
    Inventors: Mai YOSHIMURA, Masashi KAWASHITA
  • Publication number: 20210087707
    Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.
    Type: Application
    Filed: September 17, 2020
    Publication date: March 25, 2021
    Applicant: Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI, Yoshio OKAYAMA
  • Patent number: 10927476
    Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: February 23, 2021
    Assignees: OSAKA UNIVERSITY, PANASONIC CORPORATION
    Inventors: Yusuke Mori, Masayuki Imanishi, Masashi Yoshimura, Kousuke Murakami, Yoshio Okayama
  • Patent number: 10910511
    Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: February 2, 2021
    Assignees: OSAKA UNIVERSITY, DISCO CORPORATION
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Hiroshi Morikazu, Shin Tabata, Takumi Shotokuji
  • Publication number: 20210011198
    Abstract: An improved lens unit can be used in an in-vehicle camera or the like, in a condition where a forefront lens is exposed to the outside for a long time. Here, the resin lens within the lens unit has an improved durability at a high temperature. The lens unit has a plurality of lenses arranged side by side with the optical axes thereof aligned with each other. The lenses include glass lens and resin lens. The lens closest to the object is a glass lens which is closest to the object side and is coated with an ultra-hard film. Resin lenses each have a high temperature resistant reflection preventing film. The lens is a combined lens in which a lens and a lens are bonded together, and is then covered with a high temperature resistant reflection preventing film after bonding.
    Type: Application
    Filed: October 25, 2018
    Publication date: January 14, 2021
    Applicant: MAXELL, LTD.
    Inventors: Takayuki SUGINOME, Osamu NAKAYAMA, Susumu SHIBASAKI, Masashi YOSHIMURA
  • Publication number: 20200263320
    Abstract: An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.
    Type: Application
    Filed: February 17, 2020
    Publication date: August 20, 2020
    Inventors: Yoshio OKAYAMA, Shinsuke KOMATSU, Masahiro TADA, Yusuke MORI, Masayuki IMANISHI, Masashi YOSHIMURA
  • Publication number: 20200263317
    Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.
    Type: Application
    Filed: February 6, 2020
    Publication date: August 20, 2020
    Applicants: OSAKA UNIVERSITY, Panasonic Corporation
    Inventors: Yusuke MORI, Masayuki IMANISHI, Masashi YOSHIMURA, Kousuke MURAKAMI, Shinsuke KOMATSU, Masahiro TADA, Yoshio OKAYAMA
  • Publication number: 20200255975
    Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
    Type: Application
    Filed: January 30, 2020
    Publication date: August 13, 2020
    Applicants: OSAKA UNIVERSITY, Panasonic Corporation
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI
  • Patent number: 10586353
    Abstract: Information of plant based on color of a surface of plant is acquired from image data obtained by imaging plant, allowing to acquire information of plant at low cost, compared to chlorophyll meter or spectroscopic analyzer. In crop production like rice plant, fertilization management including fertilizer application management like fertilizer amount determination, or other agricultural works, is supported through a smart phone or the like based on data to be observed, like converted leaf color value is calculated from image data obtained by crop imaging. Camera is connected to smart phone. Converted leaf color value can be obtained from image data obtained by imaging leaf of rice plant by camera. Converted leaf color value is transmitted to management server, for example, amount information of applied fertilizer is required in case where converted leaf color value is less than standard, can be obtained as management information for fertilizer application management.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: March 10, 2020
    Assignee: MAXELL HOLDINGS, LTD.
    Inventors: Hiroyuki Yoshimura, Kanryo Terasawa, Masashi Yoshimura
  • Publication number: 20200017993
    Abstract: A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.
    Type: Application
    Filed: July 10, 2019
    Publication date: January 16, 2020
    Inventors: Yusuke MORI, Masashi YOSHIMURA, Masayuki IMANISHI, Akira KITAMOTO, Junichi TAKINO, Tomoaki SUMI, Yoshio OKAYAMA
  • Publication number: 20190271096
    Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.
    Type: Application
    Filed: January 9, 2019
    Publication date: September 5, 2019
    Applicants: OSAKA UNIVERSITY, Panasonic Corporation
    Inventors: Yusuke MORI, Masayuki IMANISHI, Masashi YOSHIMURA, Kousuke MURAKAMI, Yoshio OKAYAMA
  • Patent number: 10309036
    Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm?3 in a crystal near the principal surface over an entire in-plane region thereof.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: June 4, 2019
    Assignees: OSAKA UNIVERSITY, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masatomo Shibata, Takehiro Yoshida
  • Publication number: 20190131123
    Abstract: Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<?1/?2<0.9 and relational expression (2) 0.7<?3/?4<0.9 holds, where ?1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and ?2 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and ?3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and ?4 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.
    Type: Application
    Filed: April 5, 2017
    Publication date: May 2, 2019
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiichiro GESHI, Shigeru NAKAYAMA, Masashi YOSHIMURA
  • Patent number: 10266965
    Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: April 23, 2019
    Assignees: Osaka University, Itochu Plastics Inc.
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi Isemura, Akira Usui, Masatomo Shibata, Takehiro Yoshida
  • Patent number: 10260165
    Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: April 16, 2019
    Assignees: Osaka University, Sciocs Company Limited, Sumitomo Chemical Company, Limited
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Masatomo Shibata, Takehiro Yoshida
  • Publication number: 20190088816
    Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 21, 2019
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masayuki Imanishi, Hiroshi Morikazu, Shin Tabata, Takumi Shotokuji
  • Patent number: 10216697
    Abstract: Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: February 26, 2019
    Assignee: MAXELL HOLDINGS, LTD.
    Inventors: Fumie Kusumoto, Masashi Yoshimura, Eiji Sakata, Hironobu Nagano, Kenji Matsuoka, Kengo Miura
  • Patent number: 10202710
    Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: February 12, 2019
    Assignees: Osaka University, Itochu Plastics Inc., Panasonic Corporation
    Inventors: Yusuke Mori, Masashi Yoshimura, Mamoru Imade, Masashi Isemura, Yoshio Okayama
  • Patent number: 10098545
    Abstract: Provided are a system and method for surface condition measurement and analysis to effectively utilize image data photographed when a surface as an object is photographed regularly and continuously. When a surface as an object is sequentially photographed as time passes and the photographed image data is sequentially stored, the sequentially stored images are compared and the presence or absence of image regions among the images that nearly coincide with each other is determined. When there are images with image regions that nearly coincide with each other, a coordinate system having one image as a reference is set, and a position of the other image in the coordinate system is determined. When an image with an undetermined position overlaps with an image with a determined position, including images photographed subsequent thereto, the position of the image is determined.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: October 16, 2018
    Assignee: MAXELL HOLDINGS, LTD.
    Inventors: Hiroe Nakajima, Masashi Yoshimura
  • Publication number: 20180222763
    Abstract: Provided are a liquid-crystal-display protection plate that has a high strength, is produced at a reduced cost, and has a shape including a curved surface; and a method for producing the liquid-crystal-display protection plate. The liquid-crystal-display protection plate is formed of a spinel sintered body. The spinel sintered body has an average grain size of 10 ?m or more and 100 ?m or less. The liquid-crystal-display protection plate has a shape including a curved surface.
    Type: Application
    Filed: August 28, 2015
    Publication date: August 9, 2018
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiichiro GESHI, Shigeru NAKAYAMA, Masashi YOSHIMURA