Abstract: A semiconductor device includes: a semiconductor element; a frame which has a first surface, holds the semiconductor element on the first surface, and is electrically connected with the semiconductor element; and a seal which has electrical insulation properties and seals the semiconductor element and the frame, wherein a through-hole is formed in the seal, the through-hole has a hole axis which extends in a direction intersecting with the first surface, and an inner peripheral end surface of the seal exposed inside the through-hole is inclined with respect to the hole axis.

Abstract: A power module includes a first MOS transistor and a first Schottky barrier diode for a lower arm, and a second MOS transistor and a second Schottky barrier diode for an upper arm. In one embodiment, one positive-side power supply terminal and one negative-side power supply terminal are provided, while an output terminal to which the first and second MOS transistors are connected and an output terminal to which the first and second Schottky barrier diodes are connected are provided as separate output terminals.

Abstract: An object of the invention is to provide the semiconductor module which can predict a life precisely, and the life prediction system for the semiconductor module. The semiconductor module according to the present invention includes IGBTs, diodes, measurement circuits for measuring characteristics of the IGBTs and the diodes, and a memory for storing initial values of predetermined characteristics of the IGBTs and the diodes, measured values of characteristics of the IGBTs and the diodes measured by measurement circuits, and a predetermined determination value for characteristic degradation of the IGBTs and the diodes.

Abstract: A power module includes a first MOS transistor and a first Schottky barrier diode for a lower arm, and a second MOS transistor and a second Schottky barrier diode for an upper arm. In one embodiment, one positive-side power supply terminal and one negative-side power supply terminal are provided, while an output terminal to which the first and second MOS transistors are connected and an output terminal to which the first and second Schottky barrier diodes are connected are provided as separate output terminals.

Abstract: A power module includes a first MOS transistor and a first Schottky barrier diode for a lower arm, and a second MOS transistor and a second Schottky barrier diode for an upper arm. In one embodiment, one positive-side power supply terminal and one negative-side power supply terminal are provided, while an output terminal to which the first and second MOS transistors are connected and an output terminal to which the first and second Schottky barrier diodes are connected are provided as separate output terminals.

Abstract: A semiconductor device has a configuration in which a high-side module portion and a low-side module portion overlap each other. The semiconductor device further includes a control-side frame extending across the high-side module portion and the low-side module portion, and having a high-side integrated circuit and a low-side integrated circuit placed thereon. The high-side integrated circuit of the high-side module portion and the low-side integrated circuit of the low-side module portion are placed on one main surface of the control-side frame. At a boundary between the high-side module portion and the low-side module portion, the control-side frame is bent such that the high-side semiconductor chip and the low-side semiconductor chip face each other.

Abstract: A semiconductor device includes: a semiconductor element; a frame which has a first surface, holds the semiconductor element on the first surface, and is electrically connected with the semiconductor element; and a seal which has electrical insulation properties and seals the semiconductor element and the frame, wherein a through-hole is formed in the seal, the through-hole has a hole axis which extends in a direction intersecting with the first surface, and an inner peripheral end surface of the seal exposed inside the through-hole is inclined with respect to the hole axis.

Abstract: A semiconductor device includes: a semiconductor element; a frame which has a first surface, holds the semiconductor element on the first surface, and is electrically connected with the semiconductor element; and a seal which has electrical insulation properties and seals the semiconductor element and the frame, wherein a through-hole is formed in the seal, the through-hole has a hole axis which extends in a direction intersecting with the first surface, and an inner peripheral end surface of the seal exposed inside the through-hole is inclined with respect to the hole axis.

Abstract: A semiconductor device has a configuration in which a high-side module portion and a low-side module portion overlap each other. The semiconductor device further includes a control-side frame extending across the high-side module portion and the low-side module portion, and having a high-side integrated circuit and a low-side integrated circuit placed thereon. The high-side integrated circuit of the high-side module portion and the low-side integrated circuit of the low-side module portion are placed on one main surface of the control-side frame. At a boundary between the high-side module portion and the low-side module portion, the control-side frame is bent such that the high-side semiconductor chip and the low-side semiconductor chip face each other.

Abstract: A power module includes a first MOS transistor and a first Schottky barrier diode for a lower arm, and a second MOS transistor and a second Schottky barrier diode for an upper arm. In one embodiment, one positive-side power supply terminal and one negative-side power supply terminal are provided, while an output terminal to which the first and second MOS transistors are connected and an output terminal to which the first and second Schottky barrier diodes are connected are provided as separate output terminals.

Abstract: A power semiconductor module has a first frame portion, a power semiconductor element, a second frame portion, a control integrated circuit, a wire, and an insulator portion. The power semiconductor element is mounted on a first surface of the first frame portion. The control integrated circuit is mounted on a third surface of the second frame portion for controlling the power semiconductor element. A wire has one end connected to the power semiconductor element and the other end connected to the control integrated circuit. The first surface of the first frame portion and the third surface of the second frame portion are located at the same height in a direction vertical to the first surface of the first frame portion.

Abstract: A semiconductor device includes: a semiconductor element; a frame which has a first surface, holds the semiconductor element on the first surface, and is electrically connected with the semiconductor element; and a seal which has electrical insulation properties and seals the semiconductor element and the frame, wherein a through-hole is formed in the seal, the through-hole has a hole axis which extends in a direction intersecting with the first surface, and an inner peripheral end surface of the seal exposed inside the through-hole is inclined with respect to the hole axis.

Abstract: A power semiconductor module has a first frame portion, a power semiconductor element, a second frame portion, a control integrated circuit, a wire, and an insulator portion. The power semiconductor element is mounted on a first surface of the first frame portion. The control integrated circuit is mounted on a third surface of the second frame portion for controlling the power semiconductor element. A wire has one end connected to the power semiconductor element and the other end connected to the control integrated circuit. The first surface of the first frame portion and the third surface of the second frame portion are located at the same height in a direction vertical to the first surface of the first frame portion.

Abstract: A power semiconductor module has a first frame portion, a power semiconductor element, a second frame portion, a control integrated circuit, a wire, and an insulator portion. The power semiconductor element is mounted on a first surface of the first frame portion. The control integrated circuit is mounted on a third surface of the second frame portion for controlling the power semiconductor element. A wire has one end connected to the power semiconductor element and the other end connected to the control integrated circuit. The first surface of the first frame portion and the third surface of the second frame portion are located at the same height in a direction vertical to the first surface of the first frame portion.

Abstract: A transistor being one of an IGBT and a MOSFET and arranged near a gate control circuit applies a gate control signal from the gate control circuit to the gate of a transistor arranged far from the gate control circuit. A gate control signal is applied via a resistive element to the transistor arranged near the gate control circuit.

Abstract: A transistor being one of an IGBT and a MOSFET and arranged near a gate control circuit applies a gate control signal from the gate control circuit to the gate of a transistor arranged far from the gate control circuit. A gate control signal is applied via a resistive element to the transistor arranged near the gate control circuit.

Abstract: A power semiconductor module has a first frame portion, a power semiconductor element, a second frame portion, a control integrated circuit, a wire, and an insulator portion. The power semiconductor element is mounted on a first surface of the first frame portion. The control integrated circuit is mounted on a third surface of the second frame portion for controlling the power semiconductor element. A wire has one end connected to the power semiconductor element and the other end connected to the control integrated circuit. The first surface of the first frame portion and the third surface of the second frame portion are located at the same height in a direction vertical to the first surface of the first frame portion.

Abstract: An electro-optical device is provided which includes a first electro-optical panel, an electronic part that is provided to be adjacent to the first electro-optical panel, a receiving part that is interposed between the first electro-optical panel and the electronic part and receives the first electro-optical panel and the electronic part, a first metal frame that fixes the first electro-optical panel to the receiving part, and a second metal frame that fixes the electronic part together with the first metal frame therebetween. In the electro-optic device, any one of the first and second metal frames is extended toward the other one and has an elastic conductive part, and the conductive part is pressed against the other one by the elastic force and comes into contact with the other one such that the first and second metal frames are electrically connected to each other.

Abstract: An electro-optical device is provided which includes a first electro-optical panel, an electronic part that is provided to be adjacent to the first electro-optical panel, a receiving part that is interposed between the first electro-optical panel and the electronic part and receives the first electro-optical panel and the electronic part, a first metal frame that fixes the first electro-optical panel to the receiving part, and a second metal frame that fixes the electronic part together with the first metal frame therebetween. In the electro-optic device, any one of the first and second metal frames is extended toward the other one and has an elastic conductive part, and the conductive part is pressed against the other one by the elastic force and comes into contact with the other one such that the first and second metal frames are electrically connected to each other.