Abstract: An electric signal transmission device including an electrode 11, disposed to be opposed to an electrogenic cell, and for sending and receiving electric signals to and from the electrogenic cell via the electrode 11.

Abstract: Provided is a novel metal complex that can be used as an electron transporting material. A metal complex represented by the following Formula (1) to the following Formula (3). RA1 to RA9, RC1 to RC8, and RE1 to RE6 are each independently a single bond, an alkylene group, an arylene group, a heteroarylene group, or a group represented by —RP1—P(?O)RP2—RP3—, RB1 to RB9, RD1 to RD8, and RF1 to RF6 are each independently a hydrogen atom, an. alkyl group, an aryl group, a heteroaryl group, an alkoxy group, an aryloxy group, a heteroaryloxv group, an amino group, a cyano group, a halogen atom, or a hydroxy group, one or more selected from the group consisting of RB1 to RB9 are a phenanthrolinyl group, one or more selected from the group consisting of RD1 to RD8 are a phenanthrolinyl group, and one or more selected from the group consisting of RF1 to RF6 are a phenanthrolinyl group, M is an alkali metal or an alkaline earth metal, Z is 1 or 2, and X is O or S.

Abstract: An optical modulator includes a waveguide formed of a semiconductor and configured to allow light to propagate therethrough; a first electrode disposed on the waveguide and electrically connected to the waveguide; and a second electrode separated from the waveguide and electrically connected to the waveguide. An edge of the second electrode on a light entry side is located downstream of an edge of the first electrode on the light entry side in a propagation direction of the light.

Abstract: A semiconductor device includes: a semiconductor layer formed on a substrate; a first resin layer formed on the semiconductor layer; a second resin layer formed on the first resin layer; a first wiring layer that is formed on the semiconductor layer and is buried in the second resin layer; a second wiring layer that is formed on the second resin layer and the first wiring layer, and is electrically connected to the first wiring layer; and a first inorganic insulating film covering the second resin layer and the second wiring layer, wherein an area of the first wiring layer is larger than an area of the second wiring layer.

Abstract: A spot size converter includes a first waveguide including a first core layer, the first waveguide propagating light; and a second waveguide including a second core layer and provided on the first waveguide, the second waveguide propagating light. The first waveguide and the second waveguide extend in a waveguide direction. A first region and a second region are provided continuously along the waveguide direction. In the first region, the second waveguide has a tapered shape in a cross section which becomes narrower as going up away from the first waveguide. An angle between a side surface of the second waveguide and a bottom surface of the second waveguide is 60° or less.

Abstract: An organic electron transport material, which includes a phosphine oxide derivative represented by the following Formula (1): R1 represents an atomic group which has one or more of either or both of aryl and heteroaryl groups and may have one or more phosphine oxide groups, R2 to R11 each independently represent an atom or an atomic group selected from the group consisting of a hydrogen atom, a halogen atom, a cyano group, a nitro group, a carboxyl group, a formyl group, a carbonyl group, an alkoxycarbonyl group, and a trifluoromethyl group.

Abstract: An organic electron transport material, which includes a phosphine oxide derivative represented by the following Formula (1): R1 represents an atomic group which has either or both of one or more aryl groups and one or more heteroaryl groups and which may have one or more phosphine oxide group, and R2 to R9 each independently represent an atom or an atomic group selected from the group consisting of a hydrogen atom, a halogen atom, a cyano group, a C1-C12 linear or branched alkyl group, a linear or branched fluoroalkyl group, an aryl group, a substituted aryl group, a heteroaryl group, and a substituted heteroaryl group.

Abstract: An optical modulator includes a waveguide formed of a semiconductor and configured to allow light to propagate therethrough; a first electrode disposed on the waveguide and electrically connected to the waveguide; and a second electrode separated from the waveguide and electrically connected to the waveguide. An edge of the second electrode on a light entry side is located downstream of an edge of the first electrode on the light entry side in a propagation direction of the light.

Abstract: A spot size converter includes a first waveguide including a first core layer, the first waveguide propagating light; and a second waveguide including a second core layer and provided on the first waveguide, the second waveguide propagating light. The first waveguide and the second waveguide extend in a waveguide direction. A first region and a second region are provided continuously along the waveguide direction. In the first region, the second waveguide has a tapered shape in a cross section which becomes narrower as going up away from the first waveguide. An angle between a side surface of the second waveguide and a bottom surface of the second waveguide is 60° or less.

Abstract: A Mach-Zehnder modulator includes: first and second resistive elements each having first and second contact areas, the first and second contact areas of the first resistive element being arranged in a direction of a first axis, the first and second contact areas of the second resistive element being arranged in a direction of a second axis; a common conductor connecting the first contact areas of the first and second resistive elements with each other; first and second waveguide structures each including a waveguide portion extending in a direction of a third axis intersecting the first and second axes; a first signal conductor connected to the waveguide portion of the first waveguide structure and the second contact area of the first resistive element; and a second signal conductor connected to the waveguide portion of the second waveguide structure and the second contact area of the second resistive element.

Abstract: A spot-size converter includes: a support body that includes a main surface including a first to a fifth areas; a mesa structure that includes a first part on the first area and includes a second part on the second to the fourth areas; and an embedding structure that includes a first region and a second region in which a first and a second side-surfaces of the second part of the mesa structure are respectively embedded. The second part of the mesa structure includes a portion that has a width gradually decreasing in a direction from the third area toward the fifth area. The first region of the embedding structure extends along the first side-surface and terminates at one of the third and the fourth areas. The second region of the embedding structure extends along the second side-surface of the second part and is disposed on the fifth area.

Abstract: An organic electron transport material, which includes a phosphine oxide derivative represented by the following Formula (1): R1 represents an atomic group which has either or both of one or more aryl groups and one or more heteroaryl groups and which may have one or more phosphine oxide group, and R2 to R9 each independently represent an atom or an atomic group selected from the group consisting of a hydrogen atom, a halogen atom, a cyano group, a C1-C12 linear or branched alkyl group, a linear or branched fluoroalkyl group, an aryl group, a substituted aryl group, a heteroaryl group, and a substituted heteroaryl group.

Abstract: A sensor unit outputs a real sensor signal corresponding to a measured physical quantity. A controller controls a control target device in an environmental domain on the basis of the real sensor signal. The controller (a) performs a simulation of a specific phenomenon in the environmental domain under a simulation condition, and virtually measures the specific physical quantity on the basis of a simulation result and thereby generates a virtual sensor signal; (b) changes the simulation condition on the basis of the real sensor signal and the virtual sensor signal; and (c) generates a control signal for the control target device on the basis of the simulation condition and/or the simulation result. The simulation, the generation of the virtual sensor signal, and the change of the simulation condition are iteratively performed until a sensor error between the real sensor signal and the virtual sensor signal is converged.

Abstract: A semiconductor device includes: a semiconductor layer formed on a substrate; a first resin layer formed on the semiconductor layer; a second resin layer formed on the first resin layer; a first wiring layer that is formed on the semiconductor layer and is buried in the second resin layer; a second wiring layer that is formed on the second resin layer and the first wiring layer, and is electrically connected to the first wiring layer; and a first inorganic insulating film covering the second resin layer and the second wiring layer, wherein an area of the first wiring layer is larger than an area of the second wiring layer.

Abstract: A three-dimensional representation is generated corresponding to real photograph images obtained from a photographing subject by plural cameras. Error images are generated between the real photograph images and virtual photograph images obtained by a three-dimensional representation virtual observation unit. A correction amount is generated of the three-dimensional representation so as to correspond to the error images. The three-dimensional representation is corrected in accordance with the correction amount. In the three-dimensional representation virtual observation unit, a rendering process is performed for the three-dimensional representation and thereby the virtual photograph images are generated so as to be obtained by photographing the three-dimensional representation using virtual cameras corresponding to the cameras. The three-dimensional representation includes plural divisional surfaces arranged in a three-dimensional space.

Abstract: A Mach-Zehnder modulator includes: first and second resistive elements each having first and second contact areas, the first and second contact areas of the second resistive element being arranged in a direction of a first axis, the first and second contact areas of the second resistive element being arranged in a direction of a second axis; a common conductor connecting the first contact areas of the first and second resistive elements with each other; first and second waveguide structures each including a waveguide portion extending in a direction of a third axis intersecting the first and second axes; a first signal conductor connected to the waveguide portion of the first waveguide structure and the second contact area of the first resistive element; and a second signal conductor connected to the waveguide portion of the second waveguide structure and the second contact area of the second resistive element.

Abstract: A spot-size converter includes: a support body that includes a main surface including a first to a fifth areas; a mesa structure that includes a first part on the first area and includes a second part on the second to the fourth areas; and an embedding structure that includes a first region and a second region in which a first and a second side-surfaces of the second part of the mesa structure are respectively embedded. The second part of the mesa structure includes a portion that has a width gradually decreasing in a direction from the third area toward the fifth area. The first region of the embedding structure extends along the first side-surface and terminates at one of the third and the fourth areas. The second region of the embedding structure extends along the second side-surface of the second part and is disposed on the fifth area.

Abstract: A semiconductor optical element is disclosed. The semiconductor optical element includes: a mesa-shaped optical waveguide formed on a substrate; a modulation electrode formed on the optical waveguide; a first resin layer that buries side surfaces of the optical waveguide; a bonding pad formed on the first resin layer; and a connecting wiring line that connects the modulation electrode and the bonding pad. In the semiconductor optical element, side surfaces of the bonding pad are partially covered with a second resin layer provided on the first resin layer, and the connecting wiring line extends on the second resin layer.

Abstract: An organic electron transport material, which includes a phosphine oxide derivative represented by the following Formula (1): R1 represents an atomic group which has one or more of either or both of aryl and heteroaryl groups and may have one or more phosphine oxide groups, R2 to R11 each independently represent an atom or an atomic group selected from the group consisting of a hydrogen atom, a halogen atom, a cyano group, a nitro group, a carboxyl group, a formyl group, a carbonyl group, an alkoxycarbonyl group, and a trifluoromethyl group.

Abstract: A method of producing a semiconductor device includes steps of: growing semiconductor layers to form a semiconductor stack on a semiconductor substrate; forming a first adhesive layer on the semiconductor stack; bonding a temporary support made of non-semiconductor material to the first adhesive layer; removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack; forming a second adhesive layer on the exposed surface of the semiconductor stack; bonding a support to the second adhesive layer; and removing the temporary support from the semiconductor stack. The support has a thermal conductivity greater than the thermal conductivities of the semiconductor layer in the semiconductor stack. In forming the first adhesive layer, this layer can cover the entire surface, or both the top and a side of the semiconductor stack. Before forming the first adhesive layer, a protective layer can be formed on the semiconductor stack.