Abstract: An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emitters 16 connected to a cathode electrode 15, a gate electrode 13, an anode electrode 3, transistors Tr1 and Tr2, and a capacitor 12. A voltage applied to the capacitor 12 is varied to display an image. A constant voltage is applied to the gate electrode 13 to change a time ratio Du. Thus, the overall brightness of an image can be adjusted.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emitters 16 connected to a cathode electrode 15, a gate electrode 13, an anode electrode 3, transistors Tr1 and Tr2, and a capacitor 12. A voltage applied to the capacitor 12 is varied to display an image. A constant voltage is applied to the gate electrode 13 to change a time ratio Du. Thus, the overall brightness of an image can be adjusted.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: A non-evaporation getter material suitable for non-evaporation getters disposed in electron devices, such as fluorescent luminous tubes. The getter material is sized and shaped to more efficiently absorb gases actively at low temperatures.

Abstract: A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.

Abstract: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

Abstract: A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.

Abstract: A field emission device capable of facilitating manufacturing thereof. A cathode substrate is formed on the same plane thereof with gate terminals and cathode electrode each having an end acting as a cathode terminal, on which an insulating layer is arranged. The insulating layer is formed thereon with gate lines 8, which are connected to the gate terminals through a conductive film deposited in contact holes formed during formation of the gate electrodes.

Abstract: A field emission cathode which is capable of increasing bond strength between emitters and a resitive layer and a method for manufacturing the same which is capable of facilitating manufacturing of the cathode. The field emission cathode includes a laminated board, which includes a substrate, and at least a cathode electrode layer, a resitive layer, an insulating layer and a gate electrode layer which are deposited in the form of a film on the substrate in order. The gate electrode layer and insulating layer are formed with through-holes so as to commonly extend through the gate electrode layer and insulating layer. The cathode also includes buffer layers made of an insulating material and formed on portions of the resistive layer exposed via the through-holes, as well as emitters arranged on the buffer layers, respectively, resulting in bond strength between the resistive layer and the emitters being increased.

Abstract: A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.

Abstract: A flat-type fluorescent display device permitting luminous display to be observed through only a front glass cover while substantially increasing luminance. A front glass cover is provided on an inner surface thereof with FECs constituted by cathode lines, insulating layers, emitters and gate lines so as to define light-permeable sections between FECs. A substrate is formed opposite to the light-permeable sections with anodes constituted by anode-lines and phosphor layers. Electrons emitted from the FECs impinge on the anodes, leading to luminescence of the phosphor layer, which is then observed through the light-permeable sections of the front glass cover.