Abstract: A wafer is prepared, and a thickness shape of the prepared wafer at each position in a radial direction is measured for each of a predetermined number of angles into which 360 degrees of a circumference around the center of the wafer are divided. The thickness shape obtained by a measuring machine for each angle is approximated with a sixth or higher order polynomial, and a function of the wafer thickness at the position in the radial direction is created. The thickness shape outputted by the measuring machine and a thickness shape outputted by the function are compared with each other, and an error on the entire surface of the wafer is confirmed to be not greater than a predetermined error. After the confirmation, information of the function for each angle is attached to the wafer as data representing the wafer shape and supplied to a user.

Abstract: A method for measuring a wafer profile while holding a periphery of the wafer by using a flatness measurement system, including first and second optical systems respectively located on first and second main surfaces of the wafer, the method including: a first step measuring each surface variation on the main surfaces using one of the optical systems; a second step of calculating a periphery-holding deformation amount, caused by holding the wafer periphery, through utilization of the surface variations measured with the optical system; and a third step of calculating an actual wafer Warp value through subtraction of the periphery-holding deformation amount from a Warp value outputted by the flatness measurement system. This provides a method for measuring a wafer profile to enable measurement of actual wafer Warp value by using a flatness measurement system, and to successfully acquire a Warp value with little influence from a difference among systems.

Abstract: A wafer is prepared, and a thickness shape of the prepared wafer at each position in a radial direction is measured for each of a predetermined number of angles into which 360 degrees of a circumference around the center of the wafer are divided. The thickness shape obtained by a measuring machine for each angle is approximated with a sixth or higher order polynomial, and a function of the wafer thickness at the position in the radial direction is created. The thickness shape outputted by the measuring machine and a thickness shape outputted by the function are compared with each other, and an error on the entire surface of the wafer is confirmed to be not greater than a predetermined error. After the confirmation, information of the function for each angle is attached to the wafer as data representing the wafer shape and supplied to a user.

Abstract: A vapor phase growth apparatus includes a reactor, a plurality of flow paths, a cap, and an attachment. The reactor has an inlet through which vapor phase growth gas is introduced therein. The plurality of flow paths extend from the inlet to the outside of the inlet 8a. The cap has an introduction passage. The attachment has a branch path connectable to the introduction passage, and is attached to the cap. The branch path is branches in a tournament-tree shape from the introduction passage side toward the downstream side of the material gas, so that the branched paths are connected to the corresponding flow paths. Thus, a vapor phase growth apparatus capable of improving uniformity of the film thickness of an epitaxial layer grown on a substrate with high cost effectiveness, is provided.

Abstract: A vapor phase growth apparatus includes a reactor, a plurality of flow paths, a cap, and an attachment. The reactor has an inlet through which vapor phase growth gas is introduced therein. The plurality of flow paths extend from the inlet to the outside of the inlet 8a. The cap has an introduction passage. The attachment has a branch path connectable to the introduction passage, and is attached to the cap. The branch path is branches in a tournament-tree shape from the introduction passage side toward the downstream side of the material gas, so that the branched paths are connected to the corresponding flow paths. Thus, a vapor phase growth apparatus capable of improving uniformity of the film thickness of an epitaxial layer grown on a substrate with high cost effectiveness, is provided.

Abstract: A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.

Abstract: The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion that is formed on a central side of the pocket below the upper-stage-pocket portion, through holes that penetrate to a back surface of the susceptor and are opened at the time of performing the vapor-phase epitaxy are formed in the lower-stage-pocket portion, and a groove is provided on the back surface of the susceptor at a position corresponding to that of the upper-stage-pocket portion.

Abstract: An optical device is provided with an optical unit for forming an optical path of a laser beam, and a housing defining an internal space for accommodating the optical unit. The housing includes a partition for dividing the internal space into a first space and a second space. The optical unit includes a sensor arranged in the first space to detect the laser beam in the second space, a mirror arranged in the second space to define a direction of the optical path, a drive source arranged in the second space to operate the mirror to adjust the direction of the optical path, a power line for supplying power to the drive source, and a signal line for transmitting an output signal of the sensor. The signal line extends in the first space and the power line extends in the second space.

Abstract: A mobile communication system includes a traffic monitoring apparatus arranged between predetermined nodes in a mobile network for monitoring a traffic amount between the nodes; and a traffic control apparatus that outputs control information to the predetermined nodes based on a report from the traffic monitoring apparatus wherein the control information instructs the predetermined nodes to level the traffic amount.

Abstract: An attachment mechanism of an optical scanner includes a supporting structure with an opening and a fixing member. The fixing member positions and fixes the optical scanner with a positioning boss held by the opening. The fixing member includes an annular part having an outer circumference face fitted in the opening and an internal circumference face fitted on the positioning boss. One of the internal circumference face and an outer circumference face of the positioning boss includes a projection and another includes a depression for insertion of the projection. A top face of the projection and/or a bottom face of the depression slope(s) slanted from the circumference. By inserting the positioning boss in the opening, fitting the annular part in the opening, and turning the fixing member to narrow a gap between the top face and bottom face, the optical scanner is fixed to the supporting structure.

Abstract: The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion that is formed on a central side of the pocket below the upper-stage-pocket portion, through holes that penetrate to a back surface of the susceptor and are opened at the time of performing the vapor-phase epitaxy are formed in the lower-stage-pocket portion, and a groove is provided on the back surface of the susceptor at a position corresponding to that of the upper-stage-pocket portion.

Abstract: An attachment mechanism of an optical scanner includes a supporting structure with an opening and a fixing member. The fixing member positions and fixes the optical scanner with a positioning boss held by the opening. The fixing member includes an annular part having an outer circumference face fitted in the opening and an internal circumference face fitted on the positioning boss. One of the internal circumference face and an outer circumference face of the positioning boss includes a projection and another includes a depression for insertion of the projection. A top face of the projection and/or a bottom face of the depression slope(s) slanted from the circumference. By inserting the positioning boss in the opening, fitting the annular part in the opening, and turning the fixing member to narrow a gap between the top face and bottom face, the optical scanner is fixed to the supporting structure.

Abstract: Provided is a communication service providing system capable of providing the same level of services independently of a location where a user's terminal exists and capable of providing a service to a user via a network appropriate to the service. Location information collection means 71 collects location information on a terminal of a user receiving a service from any one of the data centers. User data and the like transfer instruction means 72 determines a data center closest to a location indicated by the location information and, in the case where the data center differs from the data center currently providing the service to the user, instructs the data center currently providing the service to the user to transfer the user data and the user area of the user to the data center closest to the location indicated by the location information.

Abstract: A fixing mechanism of an optical scanning device, the optical scanning device emitting a light beam and performing a scanning, the optical scanning device further being fixed to a frame at an external part, the optical scanning device further including a housing, and the fixing mechanism including: a penetration hole provided in the frame; and a protruding pin provided at both ends of the housing thereby forming a plurality of protruding pins, wherein at least one of the plurality of protruding pins is insertable to the penetration hole formed in the frame; and a biasing member biasing the housing in a direction.

Abstract: A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.

Abstract: A mobile communication system includes a traffic monitoring apparatus arranged between predetermined nodes in a mobile network for monitoring a traffic amount between the nodes; and a traffic control apparatus that outputs control information to the predetermined nodes based on a report from the traffic monitoring apparatus wherein the control information instructs the predetermined nodes to level the traffic amount.

Abstract: Fumaric acid derivatives and ophthalmic lenses using them are disclosed. More specifically, a fumaric acid derivative having a hydrophilic group and a silicon-containing alkyl group within a molecule, and contact lenses or intraocular lenses using the same are disclosed. The fumaric acid derivatives of the present invention provide, on one hand, superior oxygen permeability by having a silicon-containing alkyl group within the molecular structure, and on the other hand, improved compatibility with other hydrophilic monomers by having a hydrophilic group within the same molecule. When ophthalmic lenses obtained by polymerizing monomer compositions containing the fumaric acid derivative are constructed as, for example, water content lenses, lenses with high oxygen permeability independent from the water content may be obtained, wherein the fumaric acid derivatives is superior in compatibility with the hydrophilic monomer used in combination and allows the combination in various mixing ratios.

Abstract: The invention provides an epitaxial growth method which is a single wafer processing epitaxial growth method by which at least a single crystal substrate is placed in a reaction chamber with an upper wall having a downward convexity and an epitaxial layer is deposited on the single crystal substrate by introducing raw material gas and carrier gas into the reaction chamber through a gas feed port, in which, after any one of the radius of curvature of the upper wall of the reaction chamber and a difference between an upper end of the gas feed port and a lower end of the upper wall of the reaction chamber in the height direction or both are adjusted in accordance with the flow rate of the carrier gas which is introduced into the reaction chamber through the gas feed port, an epitaxial layer is deposited on the single crystal substrate.

Abstract: A fixing mechanism of an optical scanning device, the optical scanning device emitting a light beam and performing a scanning, the optical scanning device further being fixed to a frame at an external part, the optical scanning device further including a housing, and the fixing mechanism including: a penetration hole provided in the frame; and a protruding pin provided at both ends of the housing thereby forming a plurality of protruding pins, wherein at least one of the plurality of protruding pins is insertable to the penetration hole formed in the frame; and a biasing member biasing the housing in a direction.

Abstract: An optical device is provided with an optical unit for forming an optical path of a laser beam, and a housing defining an internal space for accommodating the optical unit. The housing includes a partition for dividing the internal space into a first space and a second space. The optical unit includes a sensor arranged in the first space to detect the laser beam in the second space, a mirror arranged in the second space to define a direction of the optical path, a drive source arranged in the second space to operate the mirror to adjust the direction of the optical path, a power line for supplying power to the drive source, and a signal line for transmitting an output signal of the sensor. The signal line extends in the first space and the power line extends in the second space.