Patents by Inventor Masatoshi Arai

Masatoshi Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9660071
    Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a conductive layer, a gate electrode, and a first electrode. The conductive layer includes a first portion, a second portion, and a third portion. The first portion is surrounded by the first semiconductor region via a first insulating portion. The second portion extends in a second direction, is provided on the first semiconductor region, and is provided on the second region. The third portion is connected between the first portion and the second portion and extends in a third direction. The first electrode is electrically connected to the third semiconductor region and the conductive layer. The second portion electrically connects the first electrode to the third portion.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: May 23, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroaki Katou, Tatsuya Nishiwaki, Masatoshi Arai, Hiroaki Katsuda, Chikako Yoshioka, Yoshitaka Hokomoto
  • Patent number: 9639002
    Abstract: A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.
    Type: Grant
    Filed: October 1, 2015
    Date of Patent: May 2, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Masatoshi Arai, Yoshitaka Komuro, Daichi Takaki
  • Patent number: 9606433
    Abstract: There is provided a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, including a base component (A) which exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0) shown below. In the formula, A? represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; R1 represents a lactone-containing cyclic group, an —SO2— containing cyclic group or a carbonate-containing cyclic group; and W2 represents a group which is formed by polymerization reaction of a group containing a polymerizable group.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: March 28, 2017
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Yoshiyuki Utsumi, Masatoshi Arai, Takahiro Dazai, Yoshitaka Komuro
  • Publication number: 20170062604
    Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a conductive layer, a gate electrode, and a first electrode. The conductive layer includes a first portion, a second portion, and a third portion. The first portion is surrounded by the first semiconductor region via a first insulating portion. The second portion extends in a second direction, is provided on the first semiconductor region, and is provided on the second region. The third portion is connected between the first portion and the second portion and extends in a third direction. The first electrode is electrically connected to the third semiconductor region and the conductive layer. The second portion electrically connects the first electrode to the third portion.
    Type: Application
    Filed: March 2, 2016
    Publication date: March 2, 2017
    Inventors: Hiroaki KATOU, Tatsuya NISHIWAKI, Masatoshi ARAI, Hiroaki KATSUDA, Chikako YOSHIOKA, Yoshitaka HOKOMOTO
  • Publication number: 20170047316
    Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, each comprising a first part, on the first semiconductor region, wherein the second semiconductor regions are spaced apart in a first direction, a third semiconductor region of the first conductivity type on each of the second semiconductor regions, an insulation portion between two of the second semiconductor regions, the insulation portion having one side in contact with one of the first parts and the other side in contact with one of the third semiconductor regions, a first electrode within the insulation portion, a gate electrode spaced apart from the first electrode and within the insulation portion, and a second electrode on the third semiconductor region and electrically connected to the first electrode and the third semiconductor region.
    Type: Application
    Filed: February 29, 2016
    Publication date: February 16, 2017
    Inventors: Hiroaki KATOU, Masatoshi ARAI, Chikako YOSHIOKA
  • Publication number: 20170040252
    Abstract: According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a gate interconnect, a second insulating layer, and a first electrode. The first semiconductor region includes a first region and a second region provided around the first region. The gate interconnect is provided on the second region. The gate interconnect includes a first portion and a second portion provided around the second portion. A thickness in the first direction of the second portion is thinner than a thickness in the first direction of the first portion. A length in the second direction of the gate interconnect is longer than a length in the third direction of the gate electrode. The first electrode contacts the gate interconnect.
    Type: Application
    Filed: February 4, 2016
    Publication date: February 9, 2017
    Inventors: Tatsuya Nishiwaki, Masatoshi Arai, Hiroaki Katou, Hiroaki Katsuda, Chikako Yoshioka, Rieko Matoba
  • Patent number: 9559057
    Abstract: According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a gate interconnect, a second insulating layer, and a first electrode. The first semiconductor region includes a first region and a second region provided around the first region. The gate interconnect is provided on the second region. The gate interconnect includes a first portion and a second portion provided around the second portion. A thickness in the first direction of the second portion is thinner than a thickness in the first direction of the first portion. A length in the second direction of the gate interconnect is longer than a length in the third direction of the gate electrode. The first electrode contacts the gate interconnect.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: January 31, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuya Nishiwaki, Masatoshi Arai, Hiroaki Katou, Hiroaki Katsuda, Chikako Yoshioka, Rieko Matoba
  • Publication number: 20160376233
    Abstract: A positive-type resist composition which generates an acid upon exposure and whose solubility in an alkali developing solution increases under the action of an acid, the composition including a base material component whose solubility in an alkali developing solution increases under the action of an acid; and a compound represented by the following general formula (m0): Z01 to Z04 each independently represent a substituent having electron withdrawing properties, Rb21 and Rb22 each independently represent an alkyl group, an alicyclic hydrocarbon group which may have a substituent, or a hydroxyl group, Rb1 represents an aryl group which may have a substituent, an alkyl group, or an alkenyl group, n1 and n2 represent an integer of 0 to 3, and X0? represents an organic anion.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 29, 2016
    Inventors: Hiroto YAMAZAKI, Yoshitaka KOMURO, Masatoshi ARAI, Daisuke KAWANA, Kenta SUZUKI, Tatsuya FUJII
  • Publication number: 20160363860
    Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component which exhibits changed solubility in a developing solution under action of acid and an acid diffusion control agent, the base component including a structural unit represented by general formula (a0-1) shown below in which R represents H, C1-C5 alkyl group or C1-C5 halogenated alkyl group; Ya represents C; Xa represents a group which forms a divalent cyclic hydrocarbon group with Ya; Ra01 to Ra03 represents H, C1-C10 monovalent saturated chain hydrocarbon group or C3-C20 monovalent saturated cyclic hydrocarbon group; the acid diffusion control agent containing an acid which exhibits an acid dissociation constant of 1.5 or more.
    Type: Application
    Filed: June 6, 2016
    Publication date: December 15, 2016
    Inventors: Taku HIRAYAMA, Daisuke KAWANA, Yoshitaka KOMURO, Masatoshi ARAI, Shogo MATSUMARU, Kenta SUZUKI, Takashi KAMIZONO, Tatsuya FUJII
  • Publication number: 20160268420
    Abstract: A semiconductor device is provided including a first electrode and a first semiconductor layer of a first conductivity type connected to the first electrode. The semiconductor device further includes a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a second electrode provided on the third semiconductor layer. The semiconductor device further includes a third electrode disposed between the first electrode and the second electrode. The semiconductor device further includes a fourth electrode having an upper end connected to the second electrode, where the fourth electrode has a higher resistivity than the second electrode.
    Type: Application
    Filed: August 5, 2015
    Publication date: September 15, 2016
    Inventors: Masatoshi ARAI, Yoshitaka HOKOMOTO, Tatsuya NISHIWAKI
  • Patent number: 9411227
    Abstract: A polymeric compound having a structural unit represented by general formula (a0-1), and a resist composition containing the same (in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Va01 and Va02 each independently represents a hydrocarbon group of 2 to 10 carbon atoms; Va01-La0— represents Va01-C(?O)O— or Va01-OC(?O)—; Ra0 represents an acid dissociable, branched hydrocarbon group of 8 or more carbon atoms, an acid dissociable, monocyclic hydrocarbon group of 4 or more carbon atoms, or an acid dissociable, polycyclic hydrocarbon group, provided that methyl adamantyl group is excluded.
    Type: Grant
    Filed: January 15, 2015
    Date of Patent: August 9, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takashi Nagamine, Junichi Tsuchiya, Masatoshi Arai, Yoshitaka Komuro
  • Patent number: 9383642
    Abstract: A polymerization method of a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1), which has excellent lithography properties, and is useful as a resist composition, the method including conducting polymerization using a mixed solvent containing 10 mass % or more of one or more of a cyclic ketone-based solvent, an ester-based solvent, and a lactone-based solvent. A resist composition containing the high-molecular weight compound (A1) and a method for forming a resist pattern using the same.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: July 5, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takahiro Dazai, Masatoshi Arai, Yoshiyuki Utsumi
  • Patent number: 9379216
    Abstract: According to an embodiment, a method for manufacturing a semiconductor device includes forming a gate trench extending into a first semiconductor layer; forming a gate insulating film on an internal wall of the gate trench; forming a polysilicon in the gate trench; etching the polysilicon into the gate trench; forming an interlayer insulating film on the polysilicon; etching the first semiconductor layer so as to project the interlayer insulating film from the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; forming a third semiconductor layer on the second semiconductor layer; forming a sidewall contacting a side face of the interlayer insulating film; forming a fourth semiconductor layer of the second conductivity type in the second semiconductor layer; and forming a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: June 28, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuya Nishiwaki, Yoshitaka Hokomoto, Masatoshi Arai
  • Patent number: 9354515
    Abstract: A resist composition containing a compound represented by general formula (m0), wherein R1 and R2 each independently represents an aryl group which may have a substituent, an alkyl group which may have a substituent, or an alkenyl group which may have a substituent, provided that R1 and R2 may be mutually bonded to form a ring with the sulfur atom; R3 represents an aromatic hydrocarbon group which may have a substituent, an alkenyl group which may have a substituent, or an alkynyl group which may have a substituent; V1 represents a single bond or an alkylene group, provided that, when R3 is an aromatic hydrocarbon group which may have a substituent, V1 is an alkylene group; and X0? represents a monovalent organic anion.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: May 31, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Takashi Nagamine, Yoshitaka Komuro, Masatoshi Arai, Yoshiyuki Utsumi
  • Publication number: 20160116843
    Abstract: A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 28, 2016
    Inventors: Masatoshi ARAI, Yoshitaka KOMURO, Daichi TAKAKI
  • Patent number: 9235123
    Abstract: A resist composition includes a high-molecular weight compound having a constituent unit (a0) represented by a general formula (a0-1), an acid generator component (B) which generates an acid upon exposure, and a photodegradable base (D1) which is decomposed upon exposure to lose acid diffusion controlling properties, and a mixing ratio of the component (D1) to the component (B) is 0.5 or more in terms of a molar ratio represented by (D1)/(B). In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya01 represents a single bond or a divalent linking group; X01 represents a sulfur atom or an oxygen atom; and Ra01 represents an optionally substituted cyclic group, an optionally substituted chain alkyl group, or an optionally substituted chain alkenyl group.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: January 12, 2016
    Assignee: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Tsuyoshi Nakamura, Kazuishi Tanno, Naoto Motoike, Yoshitaka Komuro, Tomoyuki Hirano, Masatoshi Arai
  • Publication number: 20150364562
    Abstract: A semiconductor device includes a first semiconductor layer that includes a first region and a second region, a second semiconductor layer that is provided on an upper side of the first semiconductor layer, a third semiconductor layer that is selectively provided on an upper side of the second semiconductor layer, a control electrode provided in the second semiconductor layer and the third semiconductor layer through an insulation film, a first conductor that is provided in the first semiconductor layer so as to be in contact with the control electrode and the first semiconductor layer through the insulation film and is positioned further on a first semiconductor layer side than the control electrode, a second conductor that extends in a direction from the third semiconductor layer to the first semiconductor layer in the second region and is provided in the first semiconductor layer through an insulation film, a first electrode that is electrically connected to the first semiconductor layer, the second semico
    Type: Application
    Filed: March 6, 2015
    Publication date: December 17, 2015
    Inventors: Yoshitaka Hokomoto, Tatsuya Nishiwaki, Masatoshi Arai
  • Patent number: 9122157
    Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component which exhibits changed solubility in a developing solution by the action of an acid; and the base material component containing a resin component having a constituent unit derived from a compound represented by the following general formula (a0-1), at least two or more kinds of a constituent unit containing an acid dissociable group represented by the following general formula (a1-r-1) or (a1-r-2), and a constituent unit containing a lactone-containing, an —SO2-containing, or a carbonate-containing cyclic group; and a method for forming a resist pattern using the resist composition.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: September 1, 2015
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Masatoshi Arai, Takahiro Dazai, Yoshiyuki Utsumi
  • Patent number: 9104101
    Abstract: A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.
    Type: Grant
    Filed: February 22, 2012
    Date of Patent: August 11, 2015
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Kensuke Matsuzawa, Jun Iwashita, Yoshitaka Komuro, Masatoshi Arai
  • Patent number: 9091915
    Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in an alkali developing solution under action of acid, the resist composition including a polymeric compound containing a base decomposable group in a main chain thereof.
    Type: Grant
    Filed: May 21, 2013
    Date of Patent: July 28, 2015
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Daichi Takaki, Yoshiyuki Utsumi, Masatoshi Arai