Abstract: A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.

Abstract: A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.

Abstract: A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.

Abstract: A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.

Abstract: A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit which is arranged in a semiconductor substrate, a charge holding portion which is arranged in the semiconductor substrate and temporarily holds a charge generated by the photoelectric conversion unit, a first transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge generated by the photoelectric conversion unit to the charge holding portion, a charge-voltage converter which is arranged in the semiconductor substrate and converts a charge into a voltage, and a second transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge held by the charge holding portion to the charge-voltage converter, and the first transfer electrode is arranged to cover the charge holding portion, and not to overlap the second transfer electrode when viewed from a direction perpendicular to the upper surface of the semiconductor substrate.

Abstract: One of disclosed embodiments provides a photoelectric conversion device, comprising a member including a first surface configured to receive light, and a second surface opposite to the first surface, and a plurality of photoelectric conversion portions aligned inside the member in a depth direction from the first surface, wherein at least one of the plurality of photoelectric conversion portions other than the photoelectric conversion portion positioned closest to the first surface includes, on a boundary surface thereof with the member, unevenness having a difference in level larger than a difference in level of unevenness of the photoelectric conversion portion positioned closest to the first surface, and wherein the boundary surface having the unevenness is configured to localize or resonate light incident on the member from a side of the first surface around the boundary surface having the unevenness.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.

Abstract: A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.

Abstract: A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region 110 in which holes are collected is disposed on the front side of a PD substrate 101. An n-type semiconductor region 119 is disposed below the p-type semiconductor region 110 on the back side of the PD substrate 101. The n-type semiconductor region 119 contains arsenic as a principal impurity. The photoelectric conversion portion includes the p-type semiconductor region 110 and the n-type semiconductor region 119.

Abstract: The present invention provides a solid-state image pickup device that includes a plurality of photoelectric conversion units disposed in a semiconductor substrate, a first planarizing layer disposed at a first principal surface side of the semiconductor substrate where light enters, a color filter layer disposed on the first planarizing layer and including color filters each of which is provided for a corresponding photoelectric conversion unit, and a second planarizing layer disposed on the color filter layer for reducing a level difference between the color filters. In the solid-state image pickup device, a gap is disposed in a position corresponding to a boundary between the neighboring color filters in the color filter layer, the gap extending to the second planarizing layer, and a sealing layer for sealing the gap is disposed on the gap and the second planarizing layer.

Abstract: There are provided a first waveguide member in an imaging region and a peripheral region of a semiconductor substrate and a via plug penetrating the first waveguide member.

Abstract: A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.

Abstract: A method for manufacturing a semiconductor device that includes a semiconductor substrate, the method comprises: a first irradiation step of irradiating a first irradiated region with a focused ion beam so as to selectively remove a first portion corresponding to the first irradiated region of the wiring pattern, the first irradiated region being positioned on an inner side of a short defect portion of the wiring pattern in a direction along a plane parallel to the principal surface; and a second irradiation step of, after the first irradiation step, irradiating a second irradiated region with a focused ion beam so as to remove a second portion corresponding to the second irradiated region of the wiring pattern, the second irradiated region including a region that is positioned on an outer side of the short defect portion in the direction along the plane parallel to the principal surface.

Abstract: A photoelectric conversion device including a pixel region having a photoelectric converter, and a transfer MOS transistor for transferring charges in the photoelectric converter to a floating diffusion, comprises a first insulating film continuously arranged to cover the photoelectric converter, and a first side surface and a first region of an upper surface of a gate electrode of the transfer MOS transistor while not arranged on a second region of the upper surface, the first insulating film being configured to function as an antireflection film, a contact plug connected with the floating diffusion, and a second insulating film continuously arranged to cover a periphery of the contact plug on the floating diffusion, and the second side surface and the second region while not arranged on the first region, the second insulating film being configured to function as an etching stopper in forming the contact plug.

Abstract: A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate on which a photoelectric conversion element and a transistor are arranged and a plurality of wiring layers including a first wiring layer and a second wiring layer above the first wiring layer, in which a connection between the semiconductor substrate and any of the plurality of wiring layers, between a gate electrode of the transistor and any of the plurality of wiring layers, or between the first wiring layer and the second wiring layer, has a stacked contact structure.

Abstract: A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.