Patents by Inventor Masaya Hijikigawa

Masaya Hijikigawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7880735
    Abstract: In a display device that displays by allowing external light to be incident from outside, and reflecting the incident external light so as to output the incident external light from a display surface, a porous body having a front face that is provided on the display surface side is used. Moreover, a colorless and transparent material is used for this porous body, an one-end opening is formed on the front face side in the porous body, and plural small pores that are independent of one another are provided inside the porous body.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: February 1, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Junichi Tanaka, Syuichi Kouzaki, Masaya Hijikigawa
  • Publication number: 20080084516
    Abstract: In a display device that displays by allowing external light to be incident from outside, and reflecting the incident external light so as to output the incident external light from a display surface, a porous body having a front face that is provided on the display surface side is used. Moreover, a colorless and transparent material is used for this porous body, an one-end opening is formed on the front face side in the porous body, and plural small pores that are independent of one another are provided inside the porous body.
    Type: Application
    Filed: October 4, 2006
    Publication date: April 10, 2008
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Junichi Tanaka, Syuichi Kouzaki, Masaya Hijikigawa
  • Patent number: 5004700
    Abstract: A method of making a humidity sensor comprises providing a host device constituted by a semi-conductor substrate (10) and a gate insulator (13) of an insulated gate field effect transistor, forming a layer (14) of poly (vinyl) alcohol (PVA) on the exposed surface of the insulator, heat treating the layer to crystallize and stabilize the PVA, and forming a gate electrode (15) on the PVA layer, so that the gate electrode is porous allowing ambient water vapor to be absorbed by the PVA which, in response, undergoes a change of bulk dielectric constant, thereby causing a change in gate capacitance of the transistor resulting in a detectable change of electrical conductivity in the drain source channel.
    Type: Grant
    Filed: August 1, 1990
    Date of Patent: April 2, 1991
    Assignees: EMI Limited, Sharp Kabushiki Kaisha
    Inventors: Brian C. Webb, Derek G. Pedley, Stephen J. Prosser, Masaya Hijikigawa, Hisatoshi Furubayashi
  • Patent number: 4928513
    Abstract: A sensor having a pair of sensor units, one of which is a detecting sensor unit and the other of which is a reference sensor unit, wherein each of the units comprises a substrate with a hollow portion, a thin insulating layer with a bridge, cantilever or diaphragm shape disposed on the substrate, a sensitive film disposed on the bridge, cantilever or diaphragm portion of the thin insulating layer, and a pair of electrodes being in contact with the sensitive film, the sensitive film section of the detecting sensor unit being exposed to an atmosphere to be measured so that the electrical resistance of the sensitive film changes with a variation in the physical quantity of the atmosphere to be detected, and the sensitive film section of the reference sensor unit being sealed within a shielding container so that the electrical resistance of the sensitive film is not influenced by a variation in the physical quantity of the atmosphere outside of the container, whereby the absolute physical quantity of the atmosphe
    Type: Grant
    Filed: July 28, 1987
    Date of Patent: May 29, 1990
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Sugihara, Kazutaka Uda, Hiroki Tabuchi, Yasuhiko Inami, Masaya Hijikigawa, Shoei Kataoka
  • Patent number: 4902571
    Abstract: A moisture sensitive resistive element includes a substrate made of an electrically non-conductive material, first and second electrodes deposited on the substrate in a spaced relation to each other, and a moisture sensitive film deposited on the substrate covering both the first and second electrodes. The moisture sensitive film is formed by a material given by a formula: [--CH(C.sub.6 H.sub.4 SO.sub.3 X)--CH.sub.2 --].sub.n wherein X is any one of a hydrogen atom, metal atom, ammonium, urea, triethylenediamine, tetramethyleneguanidine and hexamethylenediamine, or formed by a mixture of the above material with a hydrophilic polymer which is any one selected from a group consisting of polyvinyl alcohol, methyl cellulose and polyamide resin.
    Type: Grant
    Filed: May 15, 1984
    Date of Patent: February 20, 1990
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shuji Miyoshi, Takashi Sugihara, Masaya Hijikigawa
  • Patent number: 4894698
    Abstract: A pressure sensor of the field-effect type includes a transistor having a gate insulation film above which a hollow chamber is provided, a gate electrode movable and deformable by pressure is formed above the gate insulation film through the hollow chamber, and an auxiliary gate electrode is provided on the boundary plane between the gate insulation film and hollow chamber, whereby the value of pressure can be detected by the drain-current variation of the transistor.
    Type: Grant
    Filed: April 17, 1989
    Date of Patent: January 16, 1990
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masaya Hijikigawa, Shuji Miyoshi, Hisashi Akiyama
  • Patent number: 4889561
    Abstract: A moisture sensitive material prepared by crosslinking cellulose acetate through at least one compound selected from the group consisting of compounds containing two or more isocyanate groups; compounds containing two or more epoxy groups; compounds containing two or more carboxyl groups ##STR1## and acid anhydrides of carboxylic acids.
    Type: Grant
    Filed: February 4, 1985
    Date of Patent: December 26, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Sugihara, Masaya Hijikigawa
  • Patent number: 4885937
    Abstract: A flow sensor for detecting the rate of flow and the direction of flow of a fluid, comprising a substrate, a heating element disposed on the substrate, and four or more fluid temperature sensing elements disposed with an equal space therebetween on a virtual circle around the heating element, wherein the difference in temperature between the fluid and the heating element is maintained at a fixed level by the control of current that is applied to the heating element, so that the flow rate of the fluid can be calculated from changes in the current that corresponds to the flow rate of the fluid, and at the same time, the difference in current or in potential between the fluid temperature sensing elements is calculated from changes in temperature therebetween that arise from changes in the direction of flow of the fluid, so that the direction of flow of the fluid can be detected.
    Type: Grant
    Filed: March 31, 1988
    Date of Patent: December 12, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Nobuyuki Tanaka, Yasuhiko Inami, Masaya Hijikigawa, Shoei Kataoka
  • Patent number: 4859060
    Abstract: A variable interferometric device comprising a Fabry-Perot interferometer composed of a pair of reflecting substances facing each other with a space therebetween formed by spacers and a means for deforming at least one of the reflecting substances constituting said Fabry-Perot interferometer to thereby change the interferometric characteristics of said Fabry-Perot interferometer.
    Type: Grant
    Filed: November 25, 1986
    Date of Patent: August 22, 1989
    Assignee: 501 Sharp Kabushiki Kaisha
    Inventors: Masayuki Katagiri, Masanori Watanabe, Kazutaka Uda, Masaya Hijikigawa, Shuhei Tsuchimoto, Yasuhiko Inami
  • Patent number: 4816888
    Abstract: A sensor having an electrode structure which comprises a lamination of at least two layers composed of a titanium layer bound to an insulating grounding layer and a nobel metal layer covering said titanium layer.
    Type: Grant
    Filed: December 30, 1986
    Date of Patent: March 28, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Junichi Tanaka, Masaya Hijikigawa
  • Patent number: 4805296
    Abstract: A method of manufacturing a resistance thermometer which includes the steps of preparing a support substrate and forming a platinum film, which serves as a temperature measuring element, on the support substrate by a sputtering process employing a sputtering gas which contains a predetermined amount of oxygen gas, and a resistance thermometer produced by the method. The method which optionally includes forming an aluminum oxide film, the substrate and the platinum film.
    Type: Grant
    Filed: September 10, 1986
    Date of Patent: February 21, 1989
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Akihito Jinda, Hisatoshi Furubayashi, Masaya Hijikigawa, Hiroki Tabuchi
  • Patent number: 4773935
    Abstract: A moisture sensitive material prepared by cross-linking cellulose acetate butyrate with at least one compound selected from the group consisting of compounds containing two or more isocyanate groups; copmpounds containing two or more epoxy groups; compounds containing two or more carboxyl groups; and acid anhydrides of carboxylic acids.
    Type: Grant
    Filed: July 14, 1986
    Date of Patent: September 27, 1988
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazutaka Uda, Masaya Hijikigawa
  • Patent number: 4760368
    Abstract: A moisture sensitive material prepared by cross-linking cellulose acetate through at least one selected from the group consisting of compounds containing two or more isocyanate groups; compounds containing two or more epoxy groups; compounds containing two or more carboxyl groups ##STR1## and acid anhydrides of carboxylic acids.
    Type: Grant
    Filed: April 28, 1986
    Date of Patent: July 26, 1988
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Sugihara, Masaya Hijikigawa
  • Patent number: 4757195
    Abstract: A photoelastic element having reduced internal stress comprising a photoelastic material member; pedestal means; and a pair of supporting members integrally formed with the pedestal means for supporting the photoelastic material member, one of said pair of supporting members being adhered or bound to the photoelastic material member, and the other of said pair of supporting members being in contact with the photoelastic material member without being bound thereto.
    Type: Grant
    Filed: June 26, 1986
    Date of Patent: July 12, 1988
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masayuki Katagiri, Masanori Watanaba, Masaya Hijikigawa
  • Patent number: 4729240
    Abstract: A pressure sensor element includes a polymer optical conductor which includes a substrate, a first organic polymer film formed on the substrate, a second organic polymer film superposed on the first organic polymer film, and an optical reflecting film provided on a patterned end face of the first organic polymer film. The first organic polymer film portion within the pattern has a refractive index different from that of the substrate. The first organic polymer film portion outside the pattern has substantially the same refractive index as the substrate. The refractive index of the second organic polymer film is substantially the same as that of the first organic polymer film portion outside the pattern. At least either one of the refractive indexes of the first and second organic polymer films changes with pressure fluctuation.
    Type: Grant
    Filed: March 14, 1986
    Date of Patent: March 8, 1988
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takashi Sugihara, Masaya Hijikigawa
  • Patent number: 4698658
    Abstract: An amorphous semiconductor device comprising a layered structure having a p-amorphous silicon layer, an i-amorphous silicon layer, an n-amorphous silicon layer, an i-amorphous silicon layer and a p-amorphous silicon layer, or an n-amorphous silicon layer, an i-amorphous silicon layer, a p-amorphous silicon layer, an i-amorphous silicon layer and an n-amorphous silicon layer, in sequence, on a substrate, electrodes being disposed on the top layer, the central layer and the bottom layer, respectively.
    Type: Grant
    Filed: July 19, 1985
    Date of Patent: October 6, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hitoshi Sannomiya, Masaya Hijikigawa
  • Patent number: 4698657
    Abstract: A field effect transistor-type sensor comprising a field effect transistor device incorporated with a sensitive means exhibiting electric variation due to a physical or chemical interaction with the physical quantity to be detected, wherein an auxiliary electrode for the application of a drift-cancellation voltage to said sensitive means is located on said sensitive means, thereby suppressing the influence of impurities and/or ions contained in the sensitive means and/or the interface between the sensitive means and the field effect transistor device, or impurities and/or ions contaminating the device from the external atmosphere during use thereof, on the operation and/or the output of the field effect transistor device, and maintaining the stable output characteristic over a long period of time.
    Type: Grant
    Filed: February 4, 1985
    Date of Patent: October 6, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masanori Watanabe, Masaya Hijikigawa
  • Patent number: 4682502
    Abstract: A pressure sensor comprising an air-tight container, enclosing water vapor therein, which elastically deforms depending upon a variation in the external pressure to result in a variation in the content volume thereof, a moisture sensor disposed within the container, and a moisture detector which electrically detects a variation in the amount of moisture to be absorbed by the moisture sensor depending upon the internal partial pressure of the water in the container due to the elastic deformation of the container.
    Type: Grant
    Filed: August 12, 1985
    Date of Patent: July 28, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shuji Miyoshi, Masaya Hijikigawa
  • Patent number: 4677249
    Abstract: A photovoltaic device comprises a p-type amorphous layer, an intrinsic amorphous layer, and an n-type amorphous layer formed on a conductive or insulative substrate. The intrinsic amorphous layer is formed by glow discharge decomposition in the atmosphere of silicon tetrafluoride with discharge source frequency in the range between 10 kHz and 100 kHz.
    Type: Grant
    Filed: April 11, 1986
    Date of Patent: June 30, 1987
    Assignee: Sharp Corporation
    Inventors: Tetsuhiro Okuno, Masaya Hijikigawa
  • Patent number: 4672148
    Abstract: A thin-film solar cell with improved photoelectric conversion efficiency has an active region for photoelectric conversion including a doped layer formed in a laminated structure with a non-crystal layer and a layer of microcrystal mixtures.
    Type: Grant
    Filed: November 12, 1985
    Date of Patent: June 9, 1987
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Yamamoto, Masaya Hijikigawa