Abstract: The invention provides a thin film field-effect transistor including, on a substrate, a gate electrode, a gate insulating film, an active layer including an oxide semiconductor, a source electrode, a drain electrode, a resistive layer including an oxide semiconductor and positioned between the active layer and at least one of the source electrode or the drain electrode, the resistive layer having an electric conductivity that is lower than the electric conductivity of the active layer, the electric conductivity of the active layer being from 10?4 Scm?1 to less than 102 Scm?1, the ratio of the electric conductivity of the active layer to the electric conductivity of the resistive layer (electric conductivity of active layer/electric conductivity of resistive layer) being from 101 to 1010, and at least one of the source electrode or the drain electrode including a layer including Ti or a Ti alloy positioned at the side facing the resistive layer.

Abstract: A process for selectively producing 4,9-dibromodiamantane includes a step of reacting diamantane with bromine in the presence of a Lewis acid and a solvent, wherein the solvent comprises a substituted or unsubstituted, straight-chain, branched-chain or cyclic saturated hydrocarbon containing from 3 to 10 carbon atoms, and a reaction solution after the step satisfies Formula (1): A/(A+B+C+D+E)>0.80 ??Formula (1) wherein A represents an area ratio (%) of 4,9-dibromodiamantane obtained by gas chromatography of the reaction solution, B represents an area ratio of diamantane, C represents a sum of an area ratio of 1-bromodiamantane and an area ratio of 4-bromodiamantane, D represents an area ratio of tribromodiamantane, and E represents a sum of an area ratio of 1,6-dibromodiamantane and an area ratio of 1,4-dibromodiamantane.

Abstract: An image sensor 1 has a substrate 2 and primary light-receiving pixels 4 arrayed in the direction of the surface of the substrate, and the primary light-receiving pixels are formed by laminating plural secondary light-receiving pixels 10, 20 and 30 which sense lights in different wavelength ranges, respectively, via at least sealing insulation layers 18 and 28 between adjacent secondary light-receiving pixels in the thickness direction. Each secondary light-receiving pixel includes a photoelectric conversion portion 14, 24, or 34 for photoelectrically converting the lights and a signal output portion 12, 22 or 32 for outputting signals from a thin film transistor 40 according to charges generated by the photoelectric conversion portion, and the active layer 48 of the thin film transistor is formed from an oxide semiconductor or organic semiconductor.

Abstract: A lighting apparatus and a display apparatus therewith are disclosed. The lighting apparatus includes a first light-transmitting electrode layer, a second light-transmitting electrode layer, and a luminous layer that is sandwiched by the first and the second light-transmitting electrode layers. At least one of the first and the second light-transmitting electrode layers includes at least a first conductive member and a second conductive member. Layout patterns of the first and the second conductive members are different from each other.

Abstract: An image forming apparatus including a substrate 12, pixel regions 14 that are arrayed on the substrate, data-input portions 38 and 40 that input image data to the pixel regions, and a current-supply portion 42 that supplies charge to the pixel regions. The pixel regions each include: thin-film transistors 30, 32 including a gate electrode 44, a gate insulating film 46, an active layer 48, a source electrode 50, and a drain electrode 52; a capacitor 34 that is electrically connected to the drain electrode and that accumulates charge; and a pixel electrode 36 that is electrically connected to the drain electrode and to the capacitor such that charged particles are electrostatically attracted to a pixel region by movement of charge accumulated in the capacitor to the pixel electrode constituting the pixel region. The active layer of the thin film transistor is formed from a material that includes an oxide semiconductor. A flexible substrate is preferably used.

Abstract: A radiation imaging element that includes a plurality of pixel portions each having a phosphor layer that absorbs radiation transmitted through a subject to emit light, a photoelectric conversion portion that includes an upper electrode, a lower electrode, and a photoelectric conversion layer disposed between the upper electrode and the lower electrode, and a TFT which outputs a signal corresponding to an electric charge generated in the photoelectric conversion layer, wherein the TFT includes at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and an electric insulating layer is further provided so as to be electrically connected between the active layer and at least one of the source electrode or the drain electrode.

Abstract: A capsule endoscope includes at least an imaging device that images a location of a subject and an optical system that focuses the location at the imaging device. The imaging device has plural pixel portions that are arranged in in-plane directions on a substrate. The pixel portion has a photoelectric conversion portion that includes a lower electrode, a photoelectric conversion layer formed over the lower electrode, and an upper electrode formed over the photoelectric conversion layer, and a signal output portion that outputs a signal based on a charge generated at the photoelectric conversion layer through a field effect thin film transistor. The field effect thin film transistor includes at least a gate electrode, a gate insulation film, a semiconductor layer, a source electrode and a drain electrode. The photoelectric conversion portion and the signal output portion are superposed in plan view.

Abstract: An image sensor 1 has a substrate 2 and primary light-receiving pixels 4 arrayed in the direction of the surface of the substrate, and the primary light-receiving pixels are formed by laminating plural secondary light-receiving pixels 10, 20 and 30 which sense lights in different wavelength ranges, respectively, via at least sealing insulation layers 18 and 28 between adjacent secondary light-receiving pixels in the thickness direction. Each secondary light-receiving pixel includes a photoelectric conversion portion 14, 24, or 34 for photoelectrically converting the lights and a signal output portion 12, 22 or 32 for outputting signals from a thin film transistor 40 according to charges generated by the photoelectric conversion portion, and the active layer 48 of the thin film transistor is formed from an oxide semiconductor or organic semiconductor.

Abstract: The present invention provides an organic electroluminescence display having an organic EL element and a thin film field-effect transistor formed on the organic EL element, wherein an electrically conductive etching protective layer which is electrically connected to an upper electrode is disposed between the upper electrode and the thin film field-effect transistor, a protective insulating layer is disposed between the electrically conductive etching protective layer and the thin film field-effect transistor, and a source electrode or a drain electrode of the thin film field-effect transistor and the electrically conductive etching protective layer are electrically connected through a contact hole formed in the protective insulating layer; and a method for producing thereof.

Abstract: The present invention provides an organic electroluminescence display having an organic electroluminescence element including, on a substrate, at least a lower electrode, an organic layer including at least a light-emitting layer, and an upper electrode in this order, and on the upper electrode, a thin film field effect transistor which includes at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode and drives the organic electroluminescence element, wherein the active layer includes an oxide semiconductor; and a manufacturing method thereof.

Abstract: A display apparatus comprises a self-emitting first display device (10) which is in a light transmission state when no image is displayed, and a second display device (40) which is formed on the first display device (10), and is capable of being switched between a light transmission state and a light non-transmission state, wherein an image which is displayed by the first display device and an image which is displayed by the second display device are superposed upon one another to display a prescribed image. By configuring such a display apparatus, a good black color display can be obtained, and a full color display with a good contrast can be provided even if the surrounding light is intense. In addition, by causing the display device (40) to provide a solid black color display, the information on the display surface on the display device (10) side will not be displayed on the display surface on the display device (40) side.

Abstract: A method for producing a display comprising: forming a plurality of pixels arrayed on a flexible substrate and independently driven by TFTs, wherein the TFTs are formed in such a manner that the direction of the channel length L between the source and drain of each TFT is the direction of two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction. When the TFTs include a switching TFT and a driving TFT, the TFTs are formed in such a manner that the direction of the channel length between the source and drain of at least the driving TFT is the direction of the two orthogonal directions on the substrate in which the substrate has a smaller dimensional change ratio than the other direction.

Abstract: A thin film field effect transistor including, on a substrate, at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein an electric resistance layer is provided in electric connection between the active layer and at least one of the source electrode or the drain electrode.

Abstract: An organic electroluminescent display device includes a substrate, lower electrodes arranged in stripes on the substrate, an insulating layer arranged on the lower electrodes, upper transparent electrodes arranged in stripes in a direction intersecting with the lower electrodes, an organic electroluminescent layer arranged between the lower electrodes and the upper transparent electrodes, electrodes auxiliary to the upper electrodes arranged on the insulating layer and connected with the upper transparent electrodes, and insulating barrier walls arranged on the insulating layer or the electrodes auxiliary to the upper electrodes, the widths of which are broadened in the upper portions, wherein the upper electrodes are connected to the electrodes auxiliary to the upper electrodes at a position between the insulating layer and a region where the width of the insulating barrier wall is broadest, and are connected within a region corresponding to the broadest width of the insulating barrier wall; and a method for

Abstract: There is provided an organic EL element having, between a positive electrode and a negative electrode, a lamination structure formed of organic films having a light emitting layer, a hole transport layer adjacent to a positive electrode side of the light emitting layer, and an electron transport layer adjacent to a negative electrode side of the light emitting layer. At least one of the organic films composing the lamination structure includes a metal element having reactivity to oxygen or water.

Abstract: The organic EL element of the invention includes an organic thin layer which includes at least a light-emitting layer, between a positive electrode and a negative electrode, wherein a layer in the organic thin layer includes a 1,3,6,8-tetraphenylpyrene compound expressed by the following structural formula (1) and a triphenylbenzene derivative expressed by the following structural formula (2). Preferably, the triphenylbenzene derivative is 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (TCPB). In the structural formula (1), R1 to R4 represent one of a hydrogen atom, alkyl group, cycloalkyl group, and aryl group. In the structural formula (2), R5 represents a carbazole skeleton expressed by the following structural formula (3). In the structural formula (3), R6 and R7 represent a hydrogen atom, or a substituent group.

Abstract: In an organic EL device disclosed, there are stacked sequentially on a glass substrate an anode, a first carrier transportation layer, a second carrier transportation layer, a light emission layer, a third carrier transportation layer, a fourth carrier transportation layer, an electron transportation layer, and a cathode. The first carrier transportation layer is formed from a material having an ionization potential Ip lower than the ionization potential Ip of the second carrier transportation layer, and the third carrier transportation layer is formed from a material having an electron affinity Ea less than the electron affinity Ea of the fourth carrier transportation layer.

Abstract: An organic electroluminescence device, comprising multiple light-emitting layers laminated between a pair of electrodes, wherein an electrode on a side where emitted light is outgoing from the light-emitting layer is a translucent and half-reflective metal electrode. According to the present invention, an organic electroluminescence device having a multi-photon device structure that is improved in light withdrawal efficiency and obtains high-brightness light emission is provided. Furthermore, an organic electroluminescence device which exhibits high-brightness light emission, and which is superior in directivity and low in brightness irregularity.

Abstract: The present invention is an organic EL device in which an anode, a hole injection layer, a first carrier transportation layer, a first luminescent layer, a second carrier transportation layer, a second luminescent layer, an electron transportation layer, and a cathode are formed on a glass substrate in order, wherein layers with a smaller electron affinity Ea and a larger energy gap Eg than those of the first and second luminescent layers are employed for the first and second carrier transportation layers, so as to enhance the emission efficiency of the first and second luminescent layers.

Abstract: A TFT is formed on a substrate. TFT has first and second regions as a source and a drain, a channel region between the first and second regions, and a gate electrode. An interlayer insulating film is formed on the substrate, covering the thin film transistor. A pixel electrode disposed on the interlayer insulating film is electrically connected to the first region of TFT via a via hole formed in the interlayer insulating film. A cover film covers the edge of the pixel electrode, exposes the inner area of the pixel electrode, and covers the surface of the interlayer insulating film in the area superposed upon the channel region of the thin film transistor to shield an ultraviolet ray. An organic light emission layer and an upper electrode are disposed on and above the pixel electrode.