Abstract: An image capturing apparatus comprises an image sensor that receives beams of reflected light from a subject incident via an imaging optical system whose wavelength that reaches a light-receiving surface is different in accordance with an angle of incidence of reflected light, and generates an image signal. The apparatus changes a state of the imaging optical system or the image sensor such that a second image signal is generated by beams for which the angle of incidence of the reflected light from the imaging optical system is different from the beams by which a first image signal is generated. The apparatus outputs a spectral image based on a plurality of the image signals generated by receiving the beams in different state of the imaging optical system or the image sensor.

Abstract: An image capturing apparatus comprises an image sensor that receives beams of reflected light from a subject incident via an imaging optical system whose wavelength that reaches a light-receiving surface is different in accordance with an angle of incidence of reflected light, and generates an image signal. The apparatus changes a state of the imaging optical system or the image sensor such that a second image signal is generated by beams for which the angle of incidence of the reflected light from the imaging optical system is different from the beams by which a first image signal is generated. The apparatus outputs a spectral image based on a plurality of the image signals generated by receiving the beams in different state of the imaging optical system or the image sensor.

Abstract: An image capturing apparatus for capturing a moving image is provided. The apparatus includes a photoelectric conversion portion configured to generate charges in accordance with incident light in an exposure period, a generation unit configured to generate a pixel signal of each frame based on charges generated in the photoelectric conversion portion, and a control unit configured to change, in an exposure period for generating one frame, a conversion efficiency of converting the incident light to the photoelectric conversion portion into the pixel signal.

Abstract: A solid-state imaging device includes pixels forming pixel rows, and a scanning circuit that performs a reset operation of a photoelectric converter and a readout operation of a pixel signal based on charges generated by the photoelectric converter including charge transfer from the photoelectric converter to the holding unit. The pixel rows include imaging rows and focus detection rows. The scanning circuit performs an image capture scan of the imaging rows and a focus detection scan of the focus detection rows, independently, such that signals of the focus detection rows are output after signals from the imaging rows. The scanning circuit performs the focus detection scan such that the reset operation on the focus detection row does not overlap with a charge transfer period on an imaging row belonging to a unit pixel row neighboring a unit pixel row to which a focus detection row under the reset operation belongs.

Abstract: An image capturing apparatus for capturing a moving image is provided. The apparatus includes a photoelectric conversion portion configured to generate charges in accordance with incident light in an exposure period, a generation unit configured to generate a pixel signal of each frame based on charges generated in the photoelectric conversion portion, and a control unit configured to change, in an exposure period for generating one frame, a conversion efficiency of converting the incident light to the photoelectric conversion portion into the pixel signal.

Abstract: An imaging device includes a plurality of pixels each of which outputs at least one of an imaging signal and a ranging signal and performs a first readout operation that reads the imaging signal from a first pixel group of the plurality of pixels, and a second readout operation that, after the first readout operation and before a readout operation for next acquiring the imaging signal, reads the ranging signal from a second pixel group of the plurality of pixels. In the first readout operation, the imaging signal is not read from a third pixel group of the plurality of pixels, in a period from a reset of the first pixel group to a next reset of the first pixel group, the third pixel group is reset, and the second pixel group is selected from the third pixel group based on the imaging signal read by the first readout operation.

Abstract: A solid-state imaging device includes pixels forming pixel rows, and a scanning circuit that performs a reset operation of a photoelectric converter and a readout operation of a pixel signal based on charges generated by the photoelectric converter including charge transfer from the photoelectric converter to the holding unit. The pixel rows include imaging rows and focus detection rows. The scanning circuit performs an image capture scan of the imaging rows and a focus detection scan of the focus detection rows, independently, such that signals of the focus detection rows are output after signals from the imaging rows. The scanning circuit performs the focus detection scan such that the reset operation on the focus detection row does not overlap with a charge transfer period on an imaging row belonging to a unit pixel row neighboring a unit pixel row to which a focus detection row under the reset operation belongs.

Abstract: An imaging device includes a plurality of pixels each of which outputs at least one of an imaging signal and a ranging signal and performs a first readout operation that reads the imaging signal from a first pixel group of the plurality of pixels, and a second readout operation that, after the first readout operation and before a readout operation for next acquiring the imaging signal, reads the ranging signal from a second pixel group of the plurality of pixels. In the first readout operation, the imaging signal is not read from a third pixel group of the plurality of pixels, in a period from a reset of the first pixel group to a next reset of the first pixel group, the third pixel group is reset, and the second pixel group is selected from the third pixel group based on the imaging signal read by the first readout operation.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Abstract: A solid-state image sensor comprises a pixel array in which a plurality of pixels are two-dimensionally arranged, and a plurality of column signal processing circuits which read out signals from the pixel array via a plurality of column signal lines arranged in correspondence with respective columns of the pixel array, wherein signals of the pixels of different colors in the pixel array are read out by the plurality of column signal processing circuits during a single period, and wherein at least the column signal processing circuits which process signals of the pixels of different colors, of the plurality of column signal processing circuits, are driven via conductive lines which are separated from each other in a region where at least the column signal processing circuits which process signals of the pixels of different colors are arranged.

Abstract: A solid-state image sensor comprises a pixel array in which a plurality of pixels are two-dimensionally arranged, and a plurality of column signal processing circuits which read out signals from the pixel array via a plurality of column signal lines arranged in correspondence with respective columns of the pixel array, wherein signals of the pixels of different colors in the pixel array are read out by the plurality of column signal processing circuits during a single period, and wherein at least the column signal processing circuits which process signals of the pixels of different colors, of the plurality of column signal processing circuits, are driven via conductive lines which are separated from each other in a region where at least the column signal processing circuits which process signals of the pixels of different colors are arranged.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Abstract: A solid-state imaging apparatus comprising a pixel array, in which a pixel for imaging including a photoelectric conversion portion formed on a semiconductor substrate and a pixel for focus detection including a photoelectric conversion portion formed on the semiconductor substrate are arranged, wherein the pixel for imaging and the pixel for focus detection each include a member including an insulating layer formed on the photoelectric conversion portion and a shielding portion, and a microlens provided on the member, and the member of at least one of the pixel for imaging and the pixel for focus detection includes a flat plate-like member having a refractive index different from a refractive index of the insulating layer.

Abstract: A substrate of a target substance-detecting element for detecting a target substance in a specimen based on localized surface plasmon resonance comprises a supporting member and a metal nano-dot group provided on the supporting member, metal nano-dots each of which is comprised in the metal nano-dot group and adjacent to each other are arranged with a gap between the metal nano-dots of not larger than 30 nm.

Abstract: An optical filter that transmits light of the visible light region includes a dielectric substrate; a dielectric layer that is formed on a surface of the dielectric substrate; and a first metal structure group in which a plurality of first metal structures are arranged two-dimensionally in an isolated state in the in-plane direction of the dielectric substrate, that is provided between the dielectric substrate and the dielectric layer, comprising: the first metal structures having first and second lengths in first and second directions orthogonal to each other, which lengths are equal to or less than a first wavelength in the visible light region; and a transmittance of the first wavelength being reduced or a reflectance being increased by surface plasmons induced on a surface of the first metal structures by resonance between light incident on the dielectric substrate or the dielectric layer and the first metal structures.

Abstract: Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided.

Abstract: A necessary number of metal structures including a trapping body for trapping a target substance provided on a support are one-dimensionally placed to form a transmission path of plasmon, and a signal based on the plasmon transmitted on the transmission path is detected so as to detect whether or not there is trapping of the target substance from a sample to the trapping body. It is thereby possible to detect a reaction of the trapping body belonging to the detecting unit and the target substance with high sensitivity.

Abstract: An optical filter that transmits light of the visible light region includes a dielectric substrate; a dielectric layer that is formed on a surface of the dielectric substrate; and a first metal structure group in which a plurality of first metal structures are arranged two-dimensionally in an isolated state in the in-plane direction of the dielectric substrate, that is provided between the dielectric substrate and the dielectric layer, comprising: the first metal structures having first and second lengths in first and second directions orthogonal to each other, which lengths are equal to or less than a first wavelength in the visible light region; and a transmittance of the first wavelength being reduced or a reflectance being increased by surface plasmons induced on a surface of the first metal structures by resonance between light incident on the dielectric substrate or the dielectric layer and the first metal structures.

Abstract: An optical filter that transmits light of the visible light region includes a dielectric substrate; a dielectric layer that is formed on a surface of the dielectric substrate; and a first metal structure group in which a plurality of first metal structures are arranged two-dimensionally in an isolated state in the in-plane direction of the dielectric substrate, that is provided between the dielectric substrate and the dielectric layer, comprising: the first metal structures having first and second lengths in first and second directions orthogonal to each other, which lengths are equal to or less than a first wavelength in the visible light region; and a transmittance of the first wavelength being reduced or a reflectance being increased by surface plasmons induced on a surface of the first metal structures by resonance between light incident on the dielectric substrate or the dielectric layer and the first metal structures.