Patents by Inventor Masaya Terai

Masaya Terai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10547027
    Abstract: An organic EL display panel manufacturing method includes preparing a substrate. The method further includes forming a plurality of organic EL elements on the substrate. The method further includes deaerating a sealing solution with use of a filter that allows only gases to pass through, the sealing solution including an organic electrically-insulating material to which an electrically-conductive substance is added. The method further includes applying the sealing solution after the deaerating above the organic EL elements and thereby forming a sealing layer.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: January 28, 2020
    Assignee: JOLED INC.
    Inventor: Masaya Terai
  • Patent number: 10396308
    Abstract: An organic electroluminescence (EL) display panel includes a multi-layered wiring laminate disposed on a substrate and including insulating layers and wiring disposed on at least one of the insulating layers and extending to a vicinity of an outer periphery of the wiring laminate; an organic EL element array disposed on the wiring laminate; a first inorganic insulating layer disposed on the array and extending outside the outer periphery of the wiring laminate in plan view; a resin sealing layer disposed on the first inorganic insulating layer, covering the array in plan view, and having an outer periphery above a resin insulating layer that is a highest layer among the insulating layers; a second inorganic insulating layer disposed on the resin sealing layer, extending outside the outer periphery of the resin sealing layer in plan view, and being in contact with the first inorganic insulating layer in a thickness direction.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: August 27, 2019
    Assignee: JOLED INC.
    Inventors: Akifumi Okigawa, Kenji Harada, Keiji Horikawa, Masaya Terai
  • Publication number: 20190109297
    Abstract: An organic EL display panel manufacturing method includes preparing a substrate. The method further includes forming a plurality of organic EL elements on the substrate. The method further includes deaerating a sealing solution with use of a filter that allows only gases to pass through, the sealing solution including an organic electrically-insulating material to which an electrically-conductive substance is added. The method further includes applying the sealing solution after the deaerating above the organic EL elements and thereby forming a sealing layer.
    Type: Application
    Filed: October 5, 2018
    Publication date: April 11, 2019
    Inventor: Masaya TERAI
  • Publication number: 20180366680
    Abstract: An organic electroluminescence (EL) display panel includes a multi-layered wiring laminate disposed on a substrate and including insulating layers and wiring disposed on at least one of the insulating layers and extending to a vicinity of an outer periphery of the wiring laminate; an organic EL element array disposed on the wiring laminate; a first inorganic insulating layer disposed on the array and extending outside the outer periphery of the wiring laminate in plan view; a resin sealing layer disposed on the first inorganic insulating layer, covering the array in plan view, and having an outer periphery above a resin insulating layer that is a highest layer among the insulating layers; a second inorganic insulating layer disposed on the resin sealing layer, extending outside the outer periphery of the resin sealing layer in plan view, and being in contact with the first inorganic insulating layer in a thickness direction.
    Type: Application
    Filed: June 13, 2018
    Publication date: December 20, 2018
    Inventors: Akifumi OKIGAWA, Kenji HARADA, Keiji HORIKAWA, Masaya TERAI
  • Patent number: 10032788
    Abstract: A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1):
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: July 24, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Shigeki Hattori, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa
  • Publication number: 20170271603
    Abstract: A semiconductor memory device of an embodiment includes a semiconductor layer, a gate electrode, and a charge storing layer provided between the semiconductor layer and the gate electrode. The charge storing layer includes polyoxometalates that contain copper (Cu) and tungsten (W).
    Type: Application
    Filed: December 14, 2016
    Publication date: September 21, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shigeki HATTORI, Masaya TERAI, Hideyuki NISHIZAWA, Koji ASAKAWA
  • Patent number: 9685321
    Abstract: A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: June 20, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaya Terai, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa
  • Patent number: 9548373
    Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: January 17, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeki Hattori, Tsukasa Tada, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
  • Patent number: 9536898
    Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
    Type: Grant
    Filed: April 28, 2016
    Date of Patent: January 3, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
  • Patent number: 9515195
    Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: December 6, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideyuki Nishizawa, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa, Tsukasa Tada
  • Publication number: 20160284869
    Abstract: A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1):
    Type: Application
    Filed: March 9, 2016
    Publication date: September 29, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: SHIGEKI HATTORI, MASAYA TERAI, HIDEYUKI NISHIZAWA, KOJI ASAKAWA
  • Publication number: 20160284868
    Abstract: A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.
    Type: Application
    Filed: March 9, 2016
    Publication date: September 29, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masaya TERAI, Shigeki HATTORI, Hideyuki NISHIZAWA, Koji ASAKAWA
  • Patent number: 9450065
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: September 20, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
  • Publication number: 20160240556
    Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
    Type: Application
    Filed: April 28, 2016
    Publication date: August 18, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
  • Patent number: 9378962
    Abstract: A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: June 28, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shigeki Hattori, Masakazu Yamagiwa, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
  • Patent number: 9356111
    Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: May 31, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
  • Publication number: 20160087067
    Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).
    Type: Application
    Filed: September 1, 2015
    Publication date: March 24, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shigeki HATTORI, Tsukasa TADA, Masaya TERAI, Hideyuki NISHIZAWA, Koji ASAKAWA, Yoshiaki FUKUZUMI
  • Publication number: 20160079387
    Abstract: Disclosed herein is a nonvolatile semiconductor memory device containing a semiconductor layer, a block insulating layer, an organic molecular layer which is formed between the semiconductor layer and the block insulating layer, and a control gate electrode formed on the block insulating layer. The organic molecular layer contains first organic molecules and second organic molecules, such that the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side.
    Type: Application
    Filed: November 20, 2015
    Publication date: March 17, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaya TERAI, Shigeki HATTORI, Takatoshi WATANABE, Masakazu YAMAGIWA, Wangying LIN, Koji ASAKAWA
  • Patent number: 9245969
    Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: January 26, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeki Hattori, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
  • Patent number: 9231114
    Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: January 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaya Terai, Shigeki Hattori, Takatoshi Watanabe, Masakazu Yamagiwa, Wangying Lin, Koji Asakawa