Abstract: A test image printer of an inkjet printer causes a test image, including a mark with a predefined shape and usable to correct an image captured by an image capturing device, and a test pattern usable to inspect a plurality of nozzles, to be printed on a recording medium. An image capture controller controls the image capturing device to capture an image of the test image printed on the recording medium. A corrector compares the image of the mark captured by the image capturing device, to the predefined shape of the mark, to calculate a correction value, and corrects the image of the test pattern, captured by the image capturing device, based on the calculated correction value. An inspector inspects the plurality of nozzles based on the image of the test pattern corrected by the corrector.

Abstract: Provided are a method of producing single crystal AlN, single crystal AlN, and a single crystal AlN production apparatus with which single crystal AlN can be cheaply and continuously produced. The method of producing single crystal AlN includes a melt formation step of heating and melting an alloy to form a melt of the alloy and a deposition step of cooling a portion of the melt and providing a temperature gradient in the melt while causing deposition of single crystal AlN. In the deposition step, a nitrogen-containing gas is brought into contact with a high-temperature portion of the melt and a single crystal AlN seed crystal or a substrate for crystal growth is held in a low-temperature portion of the melt so as to continue to take nitrogen into the melt in the high-temperature portion while causing deposition of single crystal AlN.

Abstract: A polishing apparatus is configured to polish a peripheral edge of an object. The apparatus includes: a stage having a mounting surface to mount the object; a polishing head configured to press a polishing surface against the peripheral edge and polish the peripheral edge; a first inlet configured to supply liquid to the polishing surface; and a protector having a first surface extending along a first direction intersecting with the mounting surface, the first surface having an opening between the stage and the polishing head in a second direction intersecting with the first direction.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment has a polisher polishing a substrate. A holder holds the substrate and rotates the substrate with respect to the polisher while pressing the substrate toward the polisher. A supplier supplies a polishing solution onto the polisher. A first annular part is attached to the holder. The first annular part is located around the substrate and between the holder and the polisher, when polishing the substrate. A second annular part is attached to the holder. The second annular part is located around the first annular part and between the holder and the polisher, when polishing the substrate. The first annular part is movable relative to the second annular part or the second annular part is movable relative to the first annular part, in a rotation direction of the substrate or the holder.

Abstract: According to one embodiment, a polishing device includes a stage holding a wafer, a polishing part polishing a film formed on a circumferential edge portion of the wafer, a detector detecting a residual portion of the film on the circumferential edge portion, a first movable part moving the detector along a surface of the circumferential edge portion; and a controller controlling the polishing part based on a state of the circumferential edge portion detected by the detector.

Abstract: A semiconductor manufacturing apparatus according to the present embodiment has a polisher polishing a substrate. A holder holds the substrate and rotates the substrate with respect to the polisher while pressing the substrate toward the polisher. A supplier supplies a polishing solution onto the polisher. A first annular part is attached to the holder. The first annular part is located around the substrate and between the holder and the polisher, when polishing the substrate. A second annular part is attached to the holder. The second annular part is located around the first annular part and between the holder and the polisher, when polishing the substrate. The first annular part is movable relative to the second annular part or the second annular part is movable relative to the first annular part, in a rotation direction of the substrate or the holder.

Abstract: A polishing apparatus according to an embodiment includes a first polishing part, a second polishing part, and an annular part. The second polishing part includes a mounting surface for a semiconductor substrate, and rubs the semiconductor substrate mounted on the mounting surface while pressing the semiconductor substrate against the first polishing part. The annular part includes a support part provided in the second polishing part, and a plurality of convex portions that project from the support part toward the first polishing part, are arranged in a circumferential direction around the mounting surface while being supported by the support part, and are movable in a radial direction of the semiconductor substrate.

Abstract: A polishing apparatus according to an embodiment includes a first polishing part, a second polishing part, and an annular part. The second polishing part includes a mounting surface for a semiconductor substrate, and rubs the semiconductor substrate mounted on the mounting surface while pressing the semiconductor substrate against the first polishing part. The annular part includes a support part provided in the second polishing part, and a plurality of convex portions that project from the support part toward the first polishing part, are arranged in a circumferential direction around the mounting surface while being supported by the support part, and are movable in a radial direction of the semiconductor substrate.

Abstract: According to one embodiment, a polishing device includes a stage holding a wafer, a polishing part polishing a film formed on a circumferential edge portion of the wafer, a detector detecting a residual portion of the film on the circumferential edge portion, a first movable part moving the detector along a surface of the circumferential edge portion; and a controller controlling the polishing part based on a state of the circumferential edge portion detected by the detector.

Abstract: Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.

Abstract: Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.