Patents by Inventor Masayoshi Koike
Masayoshi Koike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9142619Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.Type: GrantFiled: November 25, 2011Date of Patent: September 22, 2015Assignee: EL-SEED CORPORATIONInventors: Tsukasa Kitano, Koichi Naniwae, Masayoshi Koike, Fumiharu Teramae, Toshiyuki Kondo, Atsushi Suzuki, Tomohiko Maeda, Midori Mori
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Publication number: 20140239313Abstract: A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a buffer layer on a sapphire substrate, forming a Si-doped N+-layer with supplying silane, the N+-layer satisfying formula (Alx3Ga1-x3)y3In1-y3N, wherein 0?x3?1, 0?y3?1 and 0?x3+y3?1, forming an emission layer of a group III nitride compound semiconductor satisfying formula Alx1Gay1In1-x1-y1N, where 0?x1?1, 0?y1?1, and 0?x1+y1?1, on the N+-layer, and forming a P-layer of a P-type conduction on the emission layer, the P-layer including aluminum gallium nitride satisfying formula Alx2Ga1-x2N, wherein 0?x2?1.Type: ApplicationFiled: May 2, 2014Publication date: August 28, 2014Applicant: TOYODA GOSEI Co., LTD.Inventors: Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata, Masayoshi Koike
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Publication number: 20140127848Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Hyun CHO, Masayoshi KOIKE, Yuji IMAI, Min Ho KIM, Bang Won OH, Hun Joo HAHM
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Patent number: 8664687Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.Type: GrantFiled: July 26, 2004Date of Patent: March 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Hyun Cho, Masayoshi Koike, Yuiji Imai, Min Ho Kim, Bang Won Oh, Hun Joo Hahm
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Patent number: 8593063Abstract: A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.Type: GrantFiled: May 17, 2012Date of Patent: November 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Pun Jae Choi, Masayoshi Koike, Sang Yeob Song
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Patent number: 8546834Abstract: An LED package improved in efficiency and brightness. In the package, a body has a mounting part thereon. A plurality of light emitting diode chips are mounted on the mounting part. The mounting part has a cross-section upwardly convexed with a non-planar top portion so that at least two adjacent ones of the light emitting diode chips have opposing side surfaces facing a different direction from each other.Type: GrantFiled: April 12, 2007Date of Patent: October 1, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Masayoshi Koike, Bum Joon Kim
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Publication number: 20130126907Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.Type: ApplicationFiled: November 25, 2011Publication date: May 23, 2013Applicant: EL-SEED CorporationInventors: Tsukasa Kitano, Koichi Naniwae, Masayoshi Koike, Fumiharu Teramae, Toshiyuki Kondo, Atsushi Suzuki, Tomohiko Maeda, Midori Mori
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Publication number: 20120223660Abstract: A white light emitting device includes a structure for emitting white light having at least four wavelengths by using two or less LEDs, where the LEDs include a blue/green LED emitting blue and green wavelengths of light. The device also includes means for emitting red wavelength of light.Type: ApplicationFiled: May 17, 2012Publication date: September 6, 2012Applicant: Samsung LED Co., Ltd.Inventors: Pun Jae Choi, Masayoshi Koike, Sang Yeob Song
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Publication number: 20120217510Abstract: A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0?x3?1, 0?y3?1 and 0?x3+y3?1, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0?x1?1, 0?y1?1 and 0?x1+y1?1 on the high carrier concentration layer N+-layer, and forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0?x2?1.Type: ApplicationFiled: May 10, 2012Publication date: August 30, 2012Applicant: Toyoda Gosei Co., Ltd.Inventors: Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata, Masayoshi Koike
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Patent number: 8026156Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.Type: GrantFiled: June 23, 2009Date of Patent: September 27, 2011Assignee: Samsung LED Co., Ltd.Inventors: Soo Min Lee, Cheol Kyu Kim, Jaeun Yoo, Sung Hwan Jang, Masayoshi Koike
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Patent number: 7998767Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.Type: GrantFiled: February 12, 2010Date of Patent: August 16, 2011Assignee: Samsung LED Co., Ltd.Inventors: Tae Won Lee, Hee Seok Park, Masayoshi Koike
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Publication number: 20110189457Abstract: A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.Type: ApplicationFiled: April 14, 2011Publication date: August 4, 2011Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Jaeun YOO, Hyung Soo AHN, Min YANG, Masayoshi KOIKE
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Patent number: 7981714Abstract: Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.Type: GrantFiled: July 2, 2009Date of Patent: July 19, 2011Assignee: Samsung LED Co., Ltd.Inventors: Min Ho Kim, Masayoshi Koike, Kyeong Ik Min, Seong Suk Lee, Sung Hwan Jang
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Patent number: 7943492Abstract: A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.Type: GrantFiled: April 24, 2007Date of Patent: May 17, 2011Assignee: Samsung LED Co., Ltd.Inventors: Jaeun Yoo, Hyung Soo Ahn, Min Yang, Masayoshi Koike
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Publication number: 20110101412Abstract: A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming an N-layer of an N-type conduction, the N-layer comprising gallium nitride, forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0?x3?1, 0?y3?1 and 0?x3+y3?1, on the N-layer, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0?x1?1, 0?y1?1 and 0?x1+y1?1 on the high carrier concentration layer N+layer, doping Si and Zn into the emission layer, forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0?x2?1, and forming a contact layer of a P-type conduction, on the P-type layer, the contact layer including gallium nitride.Type: ApplicationFiled: January 10, 2011Publication date: May 5, 2011Applicant: Toyoda Gosei Co., Ltd.Inventors: Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata, Masayoshi Koike
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Patent number: 7935974Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.Type: GrantFiled: March 6, 2009Date of Patent: May 3, 2011Assignee: Samsung LED Co., Ltd.Inventors: Min Ho Kim, Masayoshi Koike, Kyeong Ik Min, Myong Soo Cho
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Patent number: 7867800Abstract: A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1?x3)y3In1?y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1?x2)y2In1?y2N emission layer (5), and a Mg-doped (Alx1Ga1?x1)y1In1?y1N p-layer (6). The AlN layer (2) has a 500 ? thickness. The GaN n+-layer (3) has about a 2.0 ?m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 ?m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 ?m thickness. The p-layer 6 has about a 1.0 ?m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8).Type: GrantFiled: December 20, 2007Date of Patent: January 11, 2011Assignee: Toyoda Gosei Co., Ltd.Inventors: Katsuhide Manabe, Hisaki Kato, Michinari Sassa, Shiro Yamazaki, Makoto Asai, Naoki Shibata, Masayoshi Koike
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Publication number: 20100210051Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.Type: ApplicationFiled: February 12, 2010Publication date: August 19, 2010Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Won Lee, Hee Seok Park, Masayoshi Koike
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Patent number: 7737429Abstract: Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.Type: GrantFiled: August 16, 2005Date of Patent: June 15, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Min Ho Kim, Masayoshi Koike, Kyeong Ik Min, Seong Suk Lee, Sung Hwan Jang
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Patent number: 7683385Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.Type: GrantFiled: February 16, 2007Date of Patent: March 23, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Won Lee, Hee Seok Park, Masayoshi Koike