Abstract: Optimization of a compression algorithm to be applied is realized in subgraph units of a neural network. A preferred aspect of the present invention is an information processing device that selects an algorithm for compressing a neural network. The information processing device includes a subgraph dividing section which divides the neural network into subgraphs and an optimizing section which outputs a compression configuration in which one compression technique selected from a plurality thereof is associated with each of the subgraphs.

Abstract: It is desirable to provide a technology which is capable of improving charging efficiency and reducing a possibility that power may affect a human body upon wireless power feeding. There is provided a receiver including a wireless communication unit configured to receive a radio wave transmitted from a transmitter; a display control unit configured to control display of at least one of receiving strength of the radio wave transmitted from the transmitter, at the wireless communication unit or predetermined information in accordance with the receiving strength; and a contactless communication unit configured to receive power wirelessly transmitted from the transmitter in a case where the receiving strength exceeds a threshold.

Abstract: It is desirable to provide a technology which is capable of improving charging efficiency and reducing a possibility that power may affect a human body upon wireless power feeding. There is provided a receiver including a wireless communication unit configured to receive a radio wave transmitted from a transmitter; a display control unit configured to control display of at least one of receiving strength of the radio wave transmitted from the transmitter, at the wireless communication unit or predetermined information in accordance with the receiving strength; and a contactless communication unit configured to receive power wirelessly transmitted from the transmitter in a case where the receiving strength exceeds a threshold.

Abstract: A device includes a first loop antenna and a second loop antenna. The first loop antenna includes at least three sides, wherein at least two of the sides form an acute interior angle. The second loop antenna includes at least one side that runs in a substantially parallel direction to one of the at least three sides of the first loop antenna. The first loop antenna and the second loop antenna are arranged substantially on the same plane.

Abstract: A device includes a first loop antenna and a second loop antenna. The first loop antenna includes at least three sides, wherein at least two of the sides form an acute interior angle. The second loop antenna includes at least one side that runs in a substantially parallel direction to one of the at least three sides of the first loop antenna. The first loop antenna and the second loop antenna are arranged substantially on the same plane.

Abstract: Provided is a tandem-type thin film silicon solar cell module having a structure wherein an intermediate layer is arranged. The module suppresses a problem of a current leak through the intermediate layer and has high light conversion efficiency by suppressing expansion of an ineffective area not contributing to power generation. A method for manufacturing such module is also provided. The module has a structure wherein a separating groove is arranged between the intermediate layer and a connecting groove, the separating groove is embedded with a crystalline silicon film, and a separating member does not exist between the separating groove and the connecting groove.

Abstract: Provided are large area and uniform VHF plasma CVD apparatus and method wherein a plasma generating source constitutes the VHF plasma CVD apparatus for manufacturing a tandem-type thin film silicon solar cell, and influences of standing waves, generation of harmful plasma other than between a pair of electrodes and supply power consumption other than between the pair of electrodes are suppressed. First and second power feed points are arranged on an electrode at positions facing each other. A distance between the power feed points is set at an integral multiple of a half of the wavelength of the using power, and a pulse power separated in terms of time is supplied. The pulse power is outputted from two phase-variable double output high frequency power supplies which can perform pulse modulation.

Abstract: The present invention relates to a compound formula (I) wherein X1 is bond or —O—CH2—, (II) or (III) R1 is hydrogen or an amino protective group, a is phenyl, indolyl or carbazolyl, each of which may be substituted with one or two substituent(s), and B is hydrogen; halogen; lower alkyl; lower alkoxycarbonyl; cyclo(lower)alkyl; or a heterocyclic group, naphthyl, 1,2,3,4-tetrahydronaphthyl, benzyl or phenyl, each of which may be substituted with one or two substituent(s), or a salt thereof. The compound (I) of the present invention and pharmaceutically acceptable salts thereof are useful for the prophylactic and/or the therapeutic treatment of pollakiures or urinary incontinence.

Abstract: The present invention relates to a compound formula (I) wherein X1 is bond or —O—CH2—, (II) or (III) R1 is hydrogen or an amino protective group, a is phenyl, indolyl or carbazolyl, each of which may be substituted with one or two substituent(s), and B is hydrogen; halogen; lower alkyl; lower alkoxycarbonyl; cyclo(lower)alkyl; or a heterocyclic group, naphthyl, 1,2,3,4-tetrahydronaphthyl, benzyl or phenyl, each of which may be substituted with one or two substituent(s), or a salt thereof. The compound (I) of the present invention and pharmaceutically acceptable salts thereof are useful for the prophylactic and/or the therapeutic treatment of pollakiures or urinary incontinence.

Abstract: A liquid crystal device is constituted by a pair of substantially parallel substrates disposed opposite to each other to leave a gap extending two-dimensionally therebetween including a rectangular wider gap region and a peripheral frame-shaped narrower gap region surrounding the wider gap region, a plurality of spacers disposed in the gap over the wider and narrower gap regions, and a liquid crystal disposed between the pair of substrates so as to form pixels in the wider gap region. The spacers are disposed to have a larger volume per unit substrate area in the wider gap region and a smaller volume per unit substrate area in the narrower gap region, thus providing a uniform cell gap between the substrates.

Abstract: A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.

Abstract: Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

Abstract: A plurality of electrode bars are arranged in parallel with each other, and side electrode bars are connected to the corresponding opposite ends of the electrode bars, thereby forming a ladder-like RF discharge electrode. Power supply points are arranged axisymmetrically with respect to a reference line, which is a bisector which bisects one side of the RF discharge electrode, while being spaced a predetermined distance from the reference line, thereby suppressing voltage distribution on the ladder electrode, which has an effect on uniformity of discharge distribution, to a sufficiently low level of nonuniformity. Thus, uniform distribution of film deposition rate can be obtained, thereby enabling uniform deposition even in large-area applications.

Abstract: An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R1, R2, . . . Rn) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V1, V2, . . . and Vn) are connected to the reactor chambers (R1, R2, . . . and Rn), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C.

Abstract: Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

Abstract: An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 1015 defects/cc.

Abstract: A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.

Abstract: An apparatus and method for treating exhaust gases. A plurality of stages of reactor chambers are connected in series in the direction of an exhaust gas flow. High-voltage power supplies are connected to the reactor chambers In each of these reactor chambers, a streamer discharger plasma is generated. The more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is higher on the upstream side of the exhaust gas flow and the electron density is lower on the downstream side. A pulse generator is provided in which a high voltage, which is an output voltage of a D.C. charger (V0), is simultaneously applied to a plurality of distributed constant lines, which are connected in parallel with one another, by a signal shortcircuit switch (S1).

Abstract: A compound of formula (I), in which: R1 is lower alkyl, cyclo(lower)alkyl, optionally substituted aryl, optionally substituted heterocyclic group, cyclo(lower)alkyl(lower)alkyl, or ar(lower)alkyl; R2 is hydrogen, hydroxy or protected hydroxy; R3 is lower alkyl, aryl, ar(lower)alkyl or optionally substituted heterocyclic(lower)alkyl; R4 is carboxy, protected carboxy or lower alkylsufonylcarbamoyl; R5 is hydrogen or lower alkyl; R6 is hydrogen or heterocyclic group; A is a single bond or lower alkylene, and Ar is optionally substituted aryl, or pharmaceutically acceptable salts thereof, having endothelin antagonistic activity.

Abstract: An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V.sub.1, V.sub.21 . . . and V.sub.n) are connected to the reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V.sub.