Abstract: A novel salt having an amide bond in its anion structure is provided. A chemically amplified resist composition comprising the salt has advantages including minimal defects and improved values of sensitivity, LWR, MEF and CDU, when processed by lithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, EB or EUV.

Abstract: A polymer comprising recurring units derived from a monomer (A) adapted to be decomposed to generate an acid upon light exposure, recurring units derived from a monomer (B) having an acid labile group, and recurring units derived from a monomer (C) having a phenolic hydroxyl group, an amount of residual monomer (A) in the polymer being up to 1.0 wt %, is prepared by feeding a monomer solution containing monomers (A), (B), and (C) in a solvent (S) to a reactor and effecting polymerization reaction in the reactor. The monomer solution has a monomer concentration of at least 35 wt %. The solvent (S) contains a compound having formula (S-1) or (S-2).

Abstract: A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon, group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Abstract: The present invention provides a tetracarboxylic acid diester compound shown by the following general formula (1), wherein X1 represents a tetravalent organic group; and R1 represents a group shown by the following general formula (2), wherein the dotted line represents a bond; Y1 represents an organic group with a valency of k+1; “k” represents 1 or 2; and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound that can give a polyimide precursor polymer soluble in a safe organic solvent widely used as a solvent of a composition and usable as a base resin of a photosensitive resin composition.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizabie group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon, group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: The present invention provides a polymer compound for a conductive polymer, having one or more kinds of repeating units “a” represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion exchange of a lithium salt, a sodium salt, a potassium salt, a sulfonium compound salt, or a nitrogen compound salt of sulfonic acid residue with a weight average molecular weight in the range of 1,000 to 500,000, wherein R1 represents a hydrogen atom or a methyl group, R2 represents a fluorine atom or a trifluoromethyl group, “m” represents an integer of 1 to 4, and “a” satisfies 0<a?1.0. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group that is soluble in an organic solvent and suitably used for fuel cells or a dopant for conductive materials.

Abstract: A positive resist composition based on a polymer comprising recurring units (a) of (meth)acrylate having an iodized lactone ring, and recurring units (b1) having a carboxyl group substituted with an acid labile group and/or recurring units (b2) having a phenolic hydroxyl group substituted with an acid labile group has a high sensitivity and resolution, and forms a pattern of good profile and minimal edge roughness after exposure.

Abstract: An object of the invention is to provide a simple, mechanized analytical approach for resist quality control and early source investigation when a defect occurs. A resist quality control method includes the steps of: (1) pretreating a resist to obtain an analysis sample; (2) subjecting the analysis sample to an instrumental analysis to obtain an analysis result; (3) converting the analysis result into numerical data, followed by a multivariate analysis; and (4) performing a quality control based on an analytical result thus obtained.

Abstract: A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.

Abstract: The present invention provides a tetracarboxylic acid diester compound shown by the following general formula (1), wherein X1 represents a tetravalent organic group; and R1 represents a group shown by the following general formula (2), Y1nRf)k??(2) wherein the dotted line represents a bond; Y1 represents an organic group with a valency of k+1; Rf represents a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms or an aromatic group in which a part or all of hydrogen atoms is/are substituted with a fluorine atom(s); “k” represents 1, 2, or 3; and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound that can give a polyimide precursor polymer soluble in a safe organic solvent widely used as a solvent of a composition, and usable as a base resin of a negative photosensitive resin composition.

Abstract: A resist composition comprising a polymer comprising recurring units of lactone and a PAG is provided. The resist composition has a high dissolution contrast during organic solvent development, and improved resist properties including MEF and CDU and forms a fine hole pattern with improved roundness and size control.

Abstract: The present invention provides a resist composition containing a base resin composed of a polymer compound that contains a repeating unit “a” shown by formula (1) and a repeating unit “b” having either or both of a carboxyl group in which a hydrogen atom is substituted with an acid-labile group and a phenolic hydroxyl group in which a hydrogen atom is substituted with an acid-labile group, with a weight average molecular weight of 1,000 to 500,000. There can be provided a resist composition that has high sensitivity and high resolution, and can give a pattern with low dimensional variation and good pattern profile after exposure. wherein R1 represents a hydrogen atom or a methyl group; Z represents a hydroxybenzoquinone group, or a hydroxynaphthoquinone group optionally containing a substituent; and a fraction “a” of the repeating unit “a” satisfies 0<a<1.0, and a fraction “b” of the repeating unit “b” satisfies 0<b<1.0.

Abstract: A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a first polymer comprising recurring units capable of forming carboxyl, hydroxyl or lactone ring and a second polymer comprising recurring units capable of forming amino and fluorinated recurring units in an ester and/or ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.

Abstract: The present invention provides a tetracarboxylic acid diester compound shown by the following general formula (1), wherein X1 represents a tetravalent organic group; and R1 represents a group shown by the following general formula (2), Y1?n?Rf)k ??(2) wherein the dotted line represents a bond; Y1 represents an organic group with a valency of k+1; Rf represents a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms or an aromatic group in which a part or all of hydrogen atoms is/are substituted with a fluorine atom(s); “k” represents 1, 2, or 3; and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound that can give a polyimide precursor polymer soluble in a safe organic solvent widely used as a solvent of a composition, and usable as a base resin of a negative photosensitive resin composition.

Abstract: The present invention provides a resist composition containing a base resin composed of a polymer compound that contains a repeating unit “a” shown by formula (1) and a repeating unit “b” having either or both of a carboxyl group in which a hydrogen atom is substituted with an acid-labile group and a phenolic hydroxyl group in which a hydrogen atom is substituted with an acid-labile group, with a weight average molecular weight of 1,000 to 500,000. There can be provided a resist composition that has high sensitivity and high resolution, and can give a pattern with low dimensional variation and good pattern profile after exposure. wherein R1 represents a hydrogen atom or a methyl group; Z represents a hydroxybenzoquinone group, or a hydroxynaphthoquinone group optionally containing a substituent; and a fraction “a” of the repeating unit “a” satisfies 0<a<1.0, and a fraction “b” of the repeating unit “b” satisfies 0<b<1.0.

Abstract: A positive resist composition based on a polymer comprising recurring units (a) of (meth)acrylate having an iodized lactone ring, and recurring units (b1) having a carboxyl group substituted with an acid labile group and/or recurring units (b2) having a phenolic hydroxyl group substituted with an acid labile group has a high sensitivity and resolution, and forms a pattern of good profile and minimal edge roughness after exposure.