Abstract: A positive resist composition comprising a polymer comprising recurring units having both an acyl or alkoxycarbonyl group and an acid labile group-substituted hydroxyl group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness.

Abstract: The present invention provides a tetracarboxylic acid diester compound shown by the following general formula (1), wherein X1 represents a tetravalent organic group; and R1 represents a group shown by the following general formula (2), wherein the dotted line represents a bond; Y1 represents an organic group with a valency of k+1; “k” represents 1 or 2; and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound that can give a polyimide precursor polymer soluble in a safe organic solvent widely used as a solvent of a composition and usable as a base resin of a photosensitive resin composition.

Abstract: A pattern forming process is provided comprising the steps of applying a resist composition comprising a polymer comprising recurring units having formula (1a) and/or (1b), an acid generator and a solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing in an alkaline developer to form a negative tone pattern.

Abstract: A monomer having a plurality of tertiary alcoholic hydroxyl groups is provided. A useful polymer is obtained by polymerizing the monomer. From a resist composition comprising the polymer, a negative pattern which is insoluble in alkaline developer and has high etch resistance is formed at a high resolution.

Abstract: A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

Abstract: A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl and/or hydroxyl group optionally substituted with an acid labile group, an oxirane or oxetane compound having a hydrophilic group, and an acid generator onto a substrate, prebaking, exposing, baking, and developing in an organic solvent so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high sensitivity and high dissolution contrast during organic solvent development and forms a fine hole or trench pattern via positive/negative reversal.

Abstract: The present invention provides a polymer compound for a conductive polymer, containing one or more repeating units (a) represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion-exchange of a lithium salt, a sodium salt, a potassium salt, or a nitrogen compound salt of a sulfonic acid residue, and having a weight average molecular weight in the range of 1,000 to 500,000. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group which is soluble in an organic solvent, and suitably used for a fuel cell or a dopant for a conductive material.

Abstract: A polymer compound for a conductive polymer including one or more repeating units represented by general formula (1), which has been synthesized by ion-exchange of a lithium salt, sodium salt, potassium salt, or nitrogen compound salt of a sulfonic acid residue, and has a weight average molecular weight in the range of 1,000 to 500,000, wherein R1 represents a hydrogen atom or methyl group, R2 represents a single bond, an ester group, or a linear, branched, or cyclic hydrocarbon group having 1 to 12 carbon atoms which may have either or both of an ether group and an ester group, and Z represents a phenylene group, naphthylene group, or ester group. There can be provided a polymer compound for a conductive polymer having a specific super strongly acidic sulfo group, which is soluble in an organic solvent, and suitably used for a fuel cell or dopant for a conductive material.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactone under the action of acid in a C7-C16 ester or C8-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.

Abstract: The present invention provides a polymer compound for a conductive polymer, containing one or more repeating units (a) represented by the following general formula (1), the polymer compound for a conductive polymer being synthesized by ion-exchange of a lithium salt, a sodium salt, a potassium salt, or a nitrogen compound salt of a sulfonic acid residue, and having a weight average molecular weight in the range of 1,000 to 500,000. There can be provided a polymer compound for a conductive polymer having a specific superacidic sulfo group which is soluble in an organic solvent, and suitably used for a fuel cell or a dopant for a conductive material.

Abstract: A positive resist composition comprising a polymer comprising recurring units having both an acyl or alkoxycarbonyl group and an acid labile group-substituted hydroxyl group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness.

Abstract: A pattern forming process is provided comprising the steps of applying a resist composition comprising a polymer comprising recurring units having formula (1a) and/or (1b), an acid generator and a solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing in an alkaline developer to form a negative tone pattern.

Abstract: A monomer (1) is prepared by reacting a compound (9) with a base or metal to form a metal enolate reagent, and reacting the metal enolate reagent with an acyloxyketone compound (8). A polymer derived from the monomer is used as base resin to formulate a resist composition, which is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness in forming positive pattern via alkaline development and in forming negative pattern via organic solvent development.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactam under the action of acid in a C7-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a copolymer comprising recurring units having an ?-trifluoromethylhydroxy or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.

Abstract: A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a first polymer comprising recurring units capable of forming carboxyl, hydroxyl or lactone ring and a second polymer comprising recurring units capable of forming amino and fluorinated recurring units in an ester and/or ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.

Abstract: A monomer having a plurality of tertiary alcoholic hydroxyl groups is provided. A useful polymer is obtained by polymerizing the monomer. From a resist composition comprising the polymer, a negative pattern which is insoluble in alkaline developer and has high etch resistance is formed at a high resolution.