Abstract: After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

Abstract: A method for manufacturing fiber reinforced cement board includes the steps of preparing a formed sheet from slurry containing cement and reinforcing fiber material, cutting off the formed sheet so that each cut-off formed sheet has the same length equal to the circumference of a making roll, forming a laminated sheet by winding the cut-off formed sheet around the making roll a plurality of times so that every layer of the laminated sheet has a cut-off mark wherein the making roll is equipped with a cutting-off wire accommodated in a lateral groove formed in the periphery of the roll, producing a mat by separating the laminated sheet from the making roll by cutting off the laminated sheet by jumping out the cutting-off wire into the cut-off mark portion so that the cut-off section of the cut-off laminated sheet is inclined to the bottom surface of the laminated sheet, and hardening and curing the produced mat.

Abstract: After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.

Abstract: After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.

Abstract: After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.

Abstract: After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part.

Abstract: A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved.

Abstract: A resist film is formed on a substrate, and a barrier film including a compound whose alkali-insoluble property is changed to an alkali-soluble property through molecular structure change caused by an alkaline solution is formed on the resist film. Thereafter, with an immersion liquid provided on the barrier film, pattern exposure is performed by selectively irradiating the resist film through the barrier film with exposing light. After the pattern exposure, the barrier film is removed and the resist film is developed. Thus, a resist pattern made of the resist film is formed.

Abstract: An ozone generating apparatus in which the temperature distribution in a dielectric tube can be more uniform so as to increase the discharge power density, the size of apparatus can be miniaturized or the capacity can be increased.

Abstract: In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.

Abstract: Without the use of a third monomer, no copolymer practicable as a base polymer for a radiation-sensitive resin composition has been obtained by copolymerizing two ingredients, i.e., a carboxylated monomer and an epoxidized monomer. A carboxylated monomer is reacted with a specific nonpolymerizable compound, and this reaction mixture is then copolymerized with an epoxidized monomer. A radiation-sensitive resin composition and a thermosetting resin composition each containing the resultant copolymer have satisfactory storage stability and are useful as a spacer for liquid-crystal display panels, etc., a planarization film for TFT elements, and a protective film for color filters.

Abstract: In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.

Abstract: An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.

Abstract: A resist film is first formed on a substrate. Subsequently, a barrier film including a basic compound of, for example, dicyclohexylamine is formed on the resist film. Thereafter, with an immersion liquid including cesium sulfate provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern in a good shape.

Abstract: An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.

Abstract: An exposure system includes a liquid supply section for supplying an immersion liquid onto a resist film formed on a substrate; and an exposure section for irradiating the resist film with exposing light through a mask with the immersion liquid provided on the resist film. The liquid supply section includes an immersion liquid tank for circulating the immersion liquid during exposure.

Abstract: A method for manufacturing fiber reinforced cement board includes the steps of preparing a formed sheet from slurry containing cement and reinforcing fiber material, cutting off the formed sheet so that each cut-off formed sheet has the same length equal to the circumference of a making roll, forming a laminated sheet by winding the cut-off formed sheet around the making roll a plurality of times so that every layer of the laminated sheet has a cut-off mark wherein the making roll is equipped with a cutting-off wire accommodated in a lateral groove formed in the periphery of the roll, producing a mat by separating the laminated sheet from the making roll by cutting off the laminated sheet by jumping out the cutting-off wire into the cut-off mark portion so that the cut-off section of the cut-off laminated sheet is inclined to the bottom surface of the laminated sheet, and hardening and curing the produced mat.

Abstract: A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.

Abstract: After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

Abstract: In a pattern formation method, a resist film is formed on a substrate, an alkali-soluble first barrier film is formed on the resist film and an alkali-insoluble second barrier film is formed on the first barrier film. Subsequently, with a liquid provided on the second barrier film, pattern exposure is performed by selectively irradiating the resist film with exposing light through the second barrier film and the first barrier film. Then, after removing the second barrier film, the resist film having been subjected to the pattern exposure is developed, so as to remove the first barrier film and form a resist pattern made of the resist film.