Patents by Inventor Masayuki Tomoyasu

Masayuki Tomoyasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9859175
    Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: January 2, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kiwook Song, Bum-Soo Kim, Kye Hyun Baek, Masayuki Tomoyasu, Eunwoo Lee, Jong Seo Hong
  • Patent number: 9799561
    Abstract: A method for fabricating a semiconductor device is disclosed.
    Type: Grant
    Filed: August 17, 2016
    Date of Patent: October 24, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan-Hoon Park, Dong-Chan Kim, Masayuki Tomoyasu, Je-Woo Han
  • Publication number: 20170053828
    Abstract: A method for fabricating a semiconductor device is disclosed.
    Type: Application
    Filed: August 17, 2016
    Publication date: February 23, 2017
    Inventors: Chan-Hoon PARK, Dong-Chan KIM, Masayuki TOMOYASU, Je-Woo HAN
  • Publication number: 20170047200
    Abstract: A plasma processing apparatus includes a chamber defining a process space, an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode, a lower electrode located opposite the upper electrode across the process space, a first gas supply unit configured to supply a first process gas into the process space via the first gas spray port and the second gas spray port, a second gas supply unit configured to supply a second process gas into the process space via the second gas spray port, a sensor configured to sense a state of plasma in an edge portion of the process space, and a controller configured to control the second gas supply unit in response to an output signal of the sensor.
    Type: Application
    Filed: April 13, 2016
    Publication date: February 16, 2017
    Inventors: Hyung-Joo Lee, Kye-hyun Baek, Masayuki Tomoyasu, Jong-seo Hong, Jin-pyoung Kim
  • Publication number: 20170032987
    Abstract: Disclosed are a dry etching apparatus and a method of etching a substrate using the same. The apparatus includes a base at a lower portion of process chamber in which a dry etching process is performed, a substrate holder arranged on the base and holding a substrate on which a plurality of pattern structures is formed by the etching process, a focus ring enclosing the substrate holder and uniformly focusing an etching plasma to a sheath area over the substrate, a driver driving the focus ring in a vertical direction perpendicular to the base and a position controller controlling a vertical position of the focus ring by selectively driving the driver in accordance with inspection results of the pattern structures. Accordingly, the gap distance between the substrate and the focus ring is automatically controlled to thereby increase the uniformity of the etching plasma over the substrate.
    Type: Application
    Filed: April 12, 2016
    Publication date: February 2, 2017
    Inventors: Hyung-Joo LEE, Kwang-Nam KIM, Jong-Seo HONG, Kye-Hyun BAEK, Masayuki TOMOYASU
  • Publication number: 20160372386
    Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.
    Type: Application
    Filed: April 29, 2016
    Publication date: December 22, 2016
    Inventors: Kiwook SONG, Bum-Soo KIM, Kye Hyun BAEK, MASAYUKI TOMOYASU, Eunwoo LEE, JONG SEO HONG
  • Patent number: 8175736
    Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: May 8, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Masayuki Tomoyasu, Merritt Funk, Kevin A. Pinto, Masaya Odagiri, Lemuel Chen, Asao Yamashita, Akira Iwami, Hiroyuki Takahashi
  • Publication number: 20110307089
    Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
    Type: Application
    Filed: December 9, 2010
    Publication date: December 15, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masayuki TOMOYASU, Merritt Lane Funk, Kevin Augustine Pinto, Masaya Odagiri, Lemuel Chen, Asao Yamashita, Akira Iwami, Hiroyuki Takahashi
  • Patent number: 7877161
    Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
    Type: Grant
    Filed: December 17, 2003
    Date of Patent: January 25, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Masayuki Tomoyasu, Merritt Lane Funk, Kevin Augustine Pinto, Masaya Odagiri, Lemuel Chen, Asao Yamashita, Akira Iwami, Hiroyuki Takahashi
  • Patent number: 7648610
    Abstract: The present invention provides a gas process apparatus that realizes uniform exhaust without depending on process conditions, a gas process chamber that constitutes the gas process apparatus, a baffle plate mounted on the gas process chamber, a method of producing the baffle plate, and an apparatus for producing the baffle plate. The baffle plate of the present invention serves as a partition between a process space in which a chemical process is carried out with a supplied gas, and a duct that is adjacent to the process space and functions to discharge exhaust gas generated as a result of the chemical process. In accordance with the difference between the pressures on both sides of the baffle plate, which difference varies depending on the location on the baffle plate, the baffle holes are disposed on a plurality of locations on the baffle plate.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: January 19, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Taro Komiya, Hatsuo Osada, Shigetoshi Hosaka, Tomihiro Yonenaga, Masayuki Tomoyasu
  • Patent number: 7505879
    Abstract: According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.
    Type: Grant
    Filed: December 6, 2004
    Date of Patent: March 17, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Masayuki Tomoyasu, Hin Oh, Hideki Tanaka
  • Patent number: 7477960
    Abstract: A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.
    Type: Grant
    Filed: February 16, 2005
    Date of Patent: January 13, 2009
    Assignee: Tokyo Electron Limited
    Inventors: James E. Willis, Merritt Funk, Kevin Lally, Kevin Pinto, Masayuki Tomoyasu, Raymond Peterson, Radha Sundararajan
  • Patent number: 7289866
    Abstract: In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are obtained by setting the third measurement data as weighted measurement data wherein the weighted measurement data is obtained by multiplying each of the first and the second measurement data by one of the weight factors to produce first and second weighted data and summing the thus produced first and the second weighted data. Therefore, a third model is formulated by multiplying each of the first and the second model by one of the weight factors to produce first and second weighted models, and summing the thus produced first and the second weighted models.
    Type: Grant
    Filed: January 7, 2005
    Date of Patent: October 30, 2007
    Assignee: Tokyo Electron Limited
    Inventor: Masayuki Tomoyasu
  • Patent number: 7172675
    Abstract: An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processing room and a magnetic pole pair having two different magnetic poles disposed opposite each other with the hole interposed therebetween. The magnetic pole pair is configured to have a sufficient magnetic field strength to prevent electrons which form a plasma in the processing room from reaching the transparent member through the hole.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: February 6, 2007
    Assignee: Tokyo Electron Limited
    Inventor: Masayuki Tomoyasu
  • Patent number: 7153387
    Abstract: There is provided a plasma processing system and method capable of decreasing the non-uniformity of a field distribution on the surface of an electrode and making the density of plasma uniform, in a plasma processing using a high density plasma which can cope with a further scale down. First and second electrodes 21 and 5 are provided in a chamber so as to face each other. A feeder plate 52 is arranged so as to be slightly spaced from the opposite surface of a surface serving as a feeding plane of the first electrode facing the second electrode 5. A feeder rod 51 is connected to the feeder plate 52 at a position which is radially shifted from a position corresponding to the center of the feeding plane of the first electrode 21. The feeder plate 52 is rotated to rotate the feeding position of the feeder rod 51 on the feeding plane of the first electrode.
    Type: Grant
    Filed: August 11, 2000
    Date of Patent: December 26, 2006
    Assignee: Tokyo Electron Limited
    Inventor: Masayuki Tomoyasu
  • Publication number: 20060184264
    Abstract: A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.
    Type: Application
    Filed: February 16, 2005
    Publication date: August 17, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: James Willis, Merritt Funk, Kevin Lally, Kevin Pinto, Masayuki Tomoyasu, Raymond Peterson, Radha Sundararajan
  • Patent number: 7047095
    Abstract: A process control system that controls processing executed on semiconductor wafers by processing apparatuses 120, 122, 124 installed in each bay (area) 110 inside a factory the processing results of which are predictable, having installed in the corresponding bay, at least one measuring apparatus 130 that executes a measuring operation on workpieces undergoing the processing in the bay, a transfer path 140 of a transfer apparatus, through which the workpieces are transferred among various apparatuses installed within the bay including the individual processing apparatuses and the measuring apparatus and a process control device 150 that controls the processing apparatuses, the measuring apparatus and the transfer apparatus in the bay. This structure reduces the length of time (cycle time) to elapse from the processing through the inspection operation and also improves the operating rate of each processing apparatus.
    Type: Grant
    Filed: December 5, 2003
    Date of Patent: May 16, 2006
    Assignee: Tokyo Electron Limited
    Inventor: Masayuki Tomoyasu
  • Publication number: 20050154482
    Abstract: In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are obtained by setting the third measurement data as weighted measurement data wherein the weighted measurement data is obtained by multiplying each of the first and the second measurement data by one of the weight factors to produce first and second weighted data and summing the thus produced first and the second weighted data. Therefore, a third model is formulated by multiplying each of the first and the second model by one of the weight factors to produce first and second weighted models, and summing the thus produced first and the second weighted models.
    Type: Application
    Filed: January 7, 2005
    Publication date: July 14, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Masayuki Tomoyasu
  • Publication number: 20050143952
    Abstract: According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.
    Type: Application
    Filed: December 6, 2004
    Publication date: June 30, 2005
    Inventors: Masayuki Tomoyasu, Hin Oh, Hideki Tanaka
  • Publication number: 20040185583
    Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
    Type: Application
    Filed: December 17, 2003
    Publication date: September 23, 2004
    Applicant: Tokyo Electron Limited
    Inventors: Masayuki Tomoyasu, Merritt Lane Funk, Kevin Augustine Pinto, Masaya Odagiri, Lemuel Chen, Asao Yamashita, Akira Iwami, Hiroyuki Takahashi