Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A focus ring includes a first conductive layer having a first thickness and a first specific resistance, a second conductive layer stacked on the first conductive layer, the second conductive layer having a second thickness greater than the first thickness and a second specific resistance greater than the first specific resistance, and a dielectric layer on one of a lower surface of the first conductive layer and an upper surface of the second conductive layer.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: According to some embodiments, a semiconductor substrate processing apparatus includes a housing, a plasma source unit, an electrostatic chuck, and a ring unit. The housing encloses a process chamber. The plasma source unit is connected to the housing, and includes a shower head and a fixing ring positioned to support the shower head. The shower head includes an upper electrode mounted on the fixing ring, and includes injection holes passing through part of the upper electrode and configured to inject gas into the chamber. The electrostatic chuck is connected to the housing and includes a lower electrode, and is for mounting a semiconductor substrate thereon. The ring unit is mounted on an edge portion of the electrostatic chuck, and includes a focus ring and a cover ring surrounding the focus ring. One of the lower electrode and the upper electrode is connected to a high frequency power supply, and the other of the lower electrode and the upper electrode is connected to ground.

Abstract: A focus ring includes a first conductive layer having a first thickness and a first specific resistance, a second conductive layer stacked on the first conductive layer, the second conductive layer having a second thickness greater than the first thickness and a second specific resistance greater than the first specific resistance, and a dielectric layer on one of a lower surface of the first conductive layer and an upper surface of the second conductive layer.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: According to some embodiments, a semiconductor substrate processing apparatus includes a housing, a plasma source unit, an electrostatic chuck, and a ring unit. The housing encloses a process chamber. The plasma source unit is connected to the housing, and includes a shower head and a fixing ring positioned to support the shower head. The shower head includes an upper electrode mounted on the fixing ring, and includes injection holes passing through part of the upper electrode and configured to inject gas into the chamber. The electrostatic chuck is connected to the housing and includes a lower electrode, and is for mounting a semiconductor substrate thereon. The ring unit is mounted on an edge portion of the electrostatic chuck, and includes a focus ring and a cover ring surrounding the focus ring. One of the lower electrode and the upper electrode is connected to a high frequency power supply, and the other of the lower electrode and the upper electrode is connected to ground.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.

Abstract: A method for fabricating a semiconductor device is disclosed.

Abstract: A method for fabricating a semiconductor device is disclosed.

Abstract: A plasma processing apparatus includes a chamber defining a process space, an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode, a lower electrode located opposite the upper electrode across the process space, a first gas supply unit configured to supply a first process gas into the process space via the first gas spray port and the second gas spray port, a second gas supply unit configured to supply a second process gas into the process space via the second gas spray port, a sensor configured to sense a state of plasma in an edge portion of the process space, and a controller configured to control the second gas supply unit in response to an output signal of the sensor.

Abstract: Disclosed are a dry etching apparatus and a method of etching a substrate using the same. The apparatus includes a base at a lower portion of process chamber in which a dry etching process is performed, a substrate holder arranged on the base and holding a substrate on which a plurality of pattern structures is formed by the etching process, a focus ring enclosing the substrate holder and uniformly focusing an etching plasma to a sheath area over the substrate, a driver driving the focus ring in a vertical direction perpendicular to the base and a position controller controlling a vertical position of the focus ring by selectively driving the driver in accordance with inspection results of the pattern structures. Accordingly, the gap distance between the substrate and the focus ring is automatically controlled to thereby increase the uniformity of the etching plasma over the substrate.

Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Abstract: The present invention provides a gas process apparatus that realizes uniform exhaust without depending on process conditions, a gas process chamber that constitutes the gas process apparatus, a baffle plate mounted on the gas process chamber, a method of producing the baffle plate, and an apparatus for producing the baffle plate. The baffle plate of the present invention serves as a partition between a process space in which a chemical process is carried out with a supplied gas, and a duct that is adjacent to the process space and functions to discharge exhaust gas generated as a result of the chemical process. In accordance with the difference between the pressures on both sides of the baffle plate, which difference varies depending on the location on the baffle plate, the baffle holes are disposed on a plurality of locations on the baffle plate.

Abstract: According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.