Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.

Abstract: A method for fabricating a semiconductor device is disclosed.

Abstract: A method for fabricating a semiconductor device is disclosed.

Abstract: A plasma processing apparatus includes a chamber defining a process space, an upper electrode mounted in the chamber, the upper electrode including a first gas spray port located in a central region of the upper electrode and a second gas spray port located in a peripheral region of the upper electrode, a lower electrode located opposite the upper electrode across the process space, a first gas supply unit configured to supply a first process gas into the process space via the first gas spray port and the second gas spray port, a second gas supply unit configured to supply a second process gas into the process space via the second gas spray port, a sensor configured to sense a state of plasma in an edge portion of the process space, and a controller configured to control the second gas supply unit in response to an output signal of the sensor.

Abstract: Disclosed are a dry etching apparatus and a method of etching a substrate using the same. The apparatus includes a base at a lower portion of process chamber in which a dry etching process is performed, a substrate holder arranged on the base and holding a substrate on which a plurality of pattern structures is formed by the etching process, a focus ring enclosing the substrate holder and uniformly focusing an etching plasma to a sheath area over the substrate, a driver driving the focus ring in a vertical direction perpendicular to the base and a position controller controlling a vertical position of the focus ring by selectively driving the driver in accordance with inspection results of the pattern structures. Accordingly, the gap distance between the substrate and the focus ring is automatically controlled to thereby increase the uniformity of the etching plasma over the substrate.

Abstract: Provided are substrate processing systems and methods of managing the same. The method may include displaying a notification for a preventive maintenance operation on a chamber, performing a maintenance operation on the chamber, performing a first optical test, and evaluating the preventive maintenance operation. The first optical test may include generating a reference plasma reaction, measuring a variation of intensity by wavelength for plasma light emitted from the reference plasma reaction, and calculating an electron density and an electron temperature from a ratio in intensity of the plasma light.

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Abstract: The present invention provides a gas process apparatus that realizes uniform exhaust without depending on process conditions, a gas process chamber that constitutes the gas process apparatus, a baffle plate mounted on the gas process chamber, a method of producing the baffle plate, and an apparatus for producing the baffle plate. The baffle plate of the present invention serves as a partition between a process space in which a chemical process is carried out with a supplied gas, and a duct that is adjacent to the process space and functions to discharge exhaust gas generated as a result of the chemical process. In accordance with the difference between the pressures on both sides of the baffle plate, which difference varies depending on the location on the baffle plate, the baffle holes are disposed on a plurality of locations on the baffle plate.

Abstract: According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.

Abstract: A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

Abstract: In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are obtained by setting the third measurement data as weighted measurement data wherein the weighted measurement data is obtained by multiplying each of the first and the second measurement data by one of the weight factors to produce first and second weighted data and summing the thus produced first and the second weighted data. Therefore, a third model is formulated by multiplying each of the first and the second model by one of the weight factors to produce first and second weighted models, and summing the thus produced first and the second weighted models.

Abstract: An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processing room and a magnetic pole pair having two different magnetic poles disposed opposite each other with the hole interposed therebetween. The magnetic pole pair is configured to have a sufficient magnetic field strength to prevent electrons which form a plasma in the processing room from reaching the transparent member through the hole.

Abstract: There is provided a plasma processing system and method capable of decreasing the non-uniformity of a field distribution on the surface of an electrode and making the density of plasma uniform, in a plasma processing using a high density plasma which can cope with a further scale down. First and second electrodes 21 and 5 are provided in a chamber so as to face each other. A feeder plate 52 is arranged so as to be slightly spaced from the opposite surface of a surface serving as a feeding plane of the first electrode facing the second electrode 5. A feeder rod 51 is connected to the feeder plate 52 at a position which is radially shifted from a position corresponding to the center of the feeding plane of the first electrode 21. The feeder plate 52 is rotated to rotate the feeding position of the feeder rod 51 on the feeding plane of the first electrode.

Abstract: A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

Abstract: A process control system that controls processing executed on semiconductor wafers by processing apparatuses 120, 122, 124 installed in each bay (area) 110 inside a factory the processing results of which are predictable, having installed in the corresponding bay, at least one measuring apparatus 130 that executes a measuring operation on workpieces undergoing the processing in the bay, a transfer path 140 of a transfer apparatus, through which the workpieces are transferred among various apparatuses installed within the bay including the individual processing apparatuses and the measuring apparatus and a process control device 150 that controls the processing apparatuses, the measuring apparatus and the transfer apparatus in the bay. This structure reduces the length of time (cycle time) to elapse from the processing through the inspection operation and also improves the operating rate of each processing apparatus.

Abstract: In a plasma processing method for monitoring data, first and second measurement data are obtained; and a first and a second model are formulated based on the first and the second measurement data. Further, third measurement data is obtained; and weight factors are obtained by setting the third measurement data as weighted measurement data wherein the weighted measurement data is obtained by multiplying each of the first and the second measurement data by one of the weight factors to produce first and second weighted data and summing the thus produced first and the second weighted data. Therefore, a third model is formulated by multiplying each of the first and the second model by one of the weight factors to produce first and second weighted models, and summing the thus produced first and the second weighted models.

Abstract: According to the present invention, multivariate analysis model expressions are generated for a plasma processing apparatus 100A and a plasma processing apparatus 100B by executing a multivariate analysis of detection data provided by a plurality of sensors included in each plasma processing apparatus when the plasma processing apparatuses 100A and 100B operate based upon first setting data. Then, when the plasma processing apparatus 100A operates based upon new second setting data, detection data provided by the plurality of sensors in the plasma processing apparatus 100A are used to generate a corresponding multivariate analysis model expression, and by using the new multivariate analysis model expression corresponding to the plasma processing apparatus 100A generated based upon the second setting data and to the plasma processing apparatus 100B, a multivariate analysis model expression corresponding to the new second setting data is generated four the plasma processing apparatus 100B.

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.