Patents by Inventor Masayuki Tsuchiya

Masayuki Tsuchiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10573531
    Abstract: A method of manufacturing a semiconductor device includes forming a first photoresist film over a substrate, exposing a first pattern including an alignment pattern in a first region, forming, on the substrate, an alignment mark corresponding to the exposed alignment pattern, forming a second photoresist film over the substrate on which the alignment mark is formed, dividing a second pattern into a plurality of regions and exposing the divided regions separately in a second region while performing positioning with respect to the alignment mark, and developing the second photoresist film and forming the second photoresist film having the second pattern, wherein at least a part of the second region is located outside an effective exposure region of an exposure apparatus in exposure of the first pattern.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: February 25, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Shuji Tobashi, Masayuki Tsuchiya
  • Publication number: 20190057939
    Abstract: A method of manufacturing a semiconductor device includes forming a first photoresist film over a substrate, exposing a first pattern including an alignment pattern in a first region, forming, on the substrate, an alignment mark corresponding to the exposed alignment pattern, forming a second photoresist film over the substrate on which the alignment mark is formed, dividing a second pattern into a plurality of regions and exposing the divided regions separately in a second region while performing positioning with respect to the alignment mark, and developing the second photoresist film and forming the second photoresist film having the second pattern, wherein at least a part of the second region is located outside an effective exposure region of an exposure apparatus in exposure of the first pattern.
    Type: Application
    Filed: August 9, 2018
    Publication date: February 21, 2019
    Inventors: Shuji Tobashi, Masayuki Tsuchiya
  • Patent number: 9966395
    Abstract: A solid-state image sensor is provided. The sensor includes a first transistor including a first diffusion region, a second transistor including a second diffusion region and an insulation film arranged over these transistors. The insulation film includes a first and a second film. A first portion of the first diffusion region covered with the insulation film includes a second portion covered with only the second film. A third portion of the second diffusion region covered with the insulation film includes a fourth portion covered with the first and second film. A stress in the fourth portion is larger than the second portion. A proportion of an area of the first portion except the second portion to an area of the first portion is lower than a proportion of an area of the fourth portion to an area of the third portion.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: May 8, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoshi Kato, Shuji Tobashi, Masayuki Tsuchiya
  • Publication number: 20170229498
    Abstract: A solid-state image sensor is provided. The sensor includes a first transistor including a first diffusion region, a second transistor including a second diffusion region and an insulation film arranged over these transistors. The insulation film includes a first and a second film. A first portion of the first diffusion region covered with the insulation film includes a second portion covered with only the second film. A third portion of the second diffusion region covered with the insulation film includes a fourth portion covered with the first and second film. A stress in the fourth portion is larger than the second portion. A proportion of an area of the first portion except the second portion to an area of the first portion is lower than a proportion of an area of the fourth portion to an area of the third portion.
    Type: Application
    Filed: January 25, 2017
    Publication date: August 10, 2017
    Inventors: Satoshi Kato, Shuji Tobashi, Masayuki Tsuchiya
  • Patent number: 9681078
    Abstract: An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: June 13, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masayuki Tsuchiya, Kouhei Hashimoto, Yasushi Nakata, Takehiko Soda
  • Publication number: 20160234409
    Abstract: An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.
    Type: Application
    Filed: January 27, 2016
    Publication date: August 11, 2016
    Inventors: Masayuki Tsuchiya, Kouhei Hashimoto, Yasushi Nakata, Takehiko Soda
  • Patent number: 9136407
    Abstract: A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.
    Type: Grant
    Filed: September 13, 2013
    Date of Patent: September 15, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Masayuki Tsuchiya
  • Patent number: 9013614
    Abstract: In a solid-state image pickup apparatus, a first insulating film continuously extends over at least part of a photoelectric conversion element and at least part of a gate electrode and further protrudes into a region above part of a floating diffusion region. A second insulating film is disposed above the first insulating film. The first insulating film has a higher dielectric constant than the second insulating film. An end of a part of the first insulating film protruding beyond an end of the gate electrode into the region above the floating diffusion region is located at a distance of 0.25 ?m or less from an end, on a side of the floating diffusion region, of the gate electrode.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: April 21, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventor: Masayuki Tsuchiya
  • Patent number: 8946386
    Abstract: Purified immunocytes were analyzed for expression frequencies, and the NKIR gene expressed specifically in natural killer (NK) cells was successfully identified. The NKIR gene encodes a receptor. Agonists and antagonists for the receptor can be identified by using the receptor.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: February 3, 2015
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Kouji Matsushima, Shinichi Hashimoto, Masayuki Tsuchiya, Yuichi Hirata, Kenji Yoshida, Kazuyuki Ojima
  • Patent number: 8759025
    Abstract: The present invention relates to humanized antibodies binding to CD47; diabodies binding to human CD47, characterized in that a disulfide bond exists between diabody-forming fragments; genes encoding any one of said antibodies; vectors containing said genes; host cells containing said vectors; processes for preparing antibodies comprising the step of culturing said host cells; and therapeutic agents for hematological disorders comprising said antibodies.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: June 24, 2014
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Yasufumi Kikuchi, Shinsuke Uno, Yasuko Kinoshita, Shigeyuki Iijima, Naoshi Fukushima, Masayuki Tsuchiya
  • Publication number: 20140078337
    Abstract: A method of manufacturing a solid-state image sensor having a first charge accumulation region, a second charge accumulation region, includes implanting ions into a semiconductor substrate through first and second openings of a mask to form the first and second charge accumulation regions. The implanting ions includes a first implantation of implanting ions into a portion below a first transfer gate, and a second implantation of implanting ions into a portion below a second transfer gate in a direction different from a direction of the first implantation.
    Type: Application
    Filed: September 13, 2013
    Publication date: March 20, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Masayuki Tsuchiya
  • Patent number: 8586039
    Abstract: The invention relates to a modified antibody which contains two or more H chain V regions and two or more L chain V regions of monoclonal antibody and can transduce a signal into cells by crosslinking TPO receptor to thereby exert TPO agonist action. The modified antibody can be used as a TPO signal transduction agonist and, therefore, useful as a remedy for various diseases such as platelet-reduction-related blood diseases, thrombopenia following chemotherapy for cancer or leukemia, etc.
    Type: Grant
    Filed: September 6, 2011
    Date of Patent: November 19, 2013
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Masayuki Tsuchiya, Toshihiko Ohtomo, Naohiro Yabuta, Hiroyuki Tsunoda, Tetsuro Orita
  • Publication number: 20130295096
    Abstract: The invention relates to a modified antibody which contains two or more H chain V regions and two or more L chain V regions of monoclonal antibody and can transduce a signal into cells by crosslinking a cell surface molecule(s) to thereby serve as an agonist.
    Type: Application
    Filed: April 3, 2013
    Publication date: November 7, 2013
    Inventors: Naoshi Fukushima, Masayuki Tsuchiya, Shinsuke Uno, Toshihiko Ohtomo, Naohiro Yabuta, Hiroyuki Tsunoda
  • Patent number: 8343761
    Abstract: An objective of the present invention is to facilitate the acquisition of antibody-producing cells that are infiltrating virus-infected cells, cancer cells, abnormal cells forming a benign hyperplasia, and the like, and to improve the efficiency of the production of antibodies as well as nucleic acids encoding them from the antibody-producing cells. The present inventors discovered that, when cancer tissues comprising infiltrating lymphocytes are transplanted into highly immunodeficient animals that do not have T cells, B cells, and NK cells and further exhibit a low IFN production ability, the differentiation and proliferation of infiltrating lymphocytes are unexpectedly promoted, and the number of plasma cells that produce antibodies recognizing cancer tissues increases dramatically, plasma cells can be separated easily, and antibodies or nucleic acids encoding them can be easily prepared from the plasma cells.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: January 1, 2013
    Assignees: Chugai Seiyaku Kabushiki Kaisha, Pharmalogicals Research Pte. Ltd., CIEA International Inc.
    Inventors: Masayuki Tsuchiya, Masami Suzuki, Kenji Yoshida, Etsuko Fujii, Miho Watanabe, Koichi Matsubara, Yu Jau Chen, Juliana Sim
  • Patent number: 8263077
    Abstract: Provided is a cell growth inhibitor that can be used for treating diseases based on abnormal cell proliferation, and in particular cancer. The cell growth inhibitor contains an anti-glypican 3 antibody as an active ingredient.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: September 11, 2012
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Hiroyuki Aburatani, Tetsuo Nakamura, Masayuki Tsuchiya
  • Patent number: 8257703
    Abstract: IgM can be obtained in the form of a pentamer by placing the genes encoding the H, L, and J chains on the same vector to transform appropriate host cells. The gene encoding the J chain may be introduced by co-transfection. When no J chain is expressed, the IgM is produced as a hexamer. The transformants obtained according to the present invention achieve a high yield of IgM. The present invention also provides methods which enable separation and quantification of polymeric IgM.
    Type: Grant
    Filed: March 18, 2010
    Date of Patent: September 4, 2012
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Reiko Irie, Hiroyuki Tsunoda, Tomoyuki Igawa, Yasuo Sekimori, Masayuki Tsuchiya
  • Publication number: 20120156724
    Abstract: The present invention relates to humanized antibodies binding to CD47; diabodies binding to human CD47, characterized in that a disulfide bond exists between diabody-forming fragments; genes encoding any one of said antibodies; vectors containing said genes; host cells containing said vectors; processes for preparing antibodies comprising the step of culturing said host cells; and therapeutic agents for hematological disorders comprising said antibodies.
    Type: Application
    Filed: December 19, 2011
    Publication date: June 21, 2012
    Inventors: Yasufumi Kikuchi, Shinsuke Uno, Yasuko Kinoshita, Shigeyuki Iijima, Naoshi Fukushima, Masayuki Tsuchiya
  • Patent number: 8158385
    Abstract: To identify antigens of the 2D7 antibody, the present inventors cloned the 2D7 antigen. The results suggested that the 2D7 antigen is an HLA class I molecule. Based on this finding, the present inventors examined whether the 2D7 antibody has cell death-inducing activity. Nuclei fragmentation was observed when the 2D7 antibody was cross-linked with another antibody, indicating that cell-death was induced. Further, diabodies of the 2D7 antibody were found to have very strong cell death-inducing activities, even without the addition of another antibody. These results indicate that minibodies of an HLA-recognizing antibody can be used as cell death-inducing agents.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: April 17, 2012
    Assignees: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Shuji Ozaki, Masahiro Abe, Masayuki Tsuchiya, Naoki Kimura, Shigeto Kawai
  • Patent number: 8105799
    Abstract: Revealed are that the actions of inflammatory cytokine and the production of inflammatory cytokines such as IL-1 and TNF induced by an inflammatory stimulus as well as the production of other inflammatory cytokines such as IL-6 induced by the former class of inflammatory cytokines are all suppressed by inhibiting the signal transduction through TAK1.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: January 31, 2012
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Masayuki Tsuchiya, Toshihiko Ohtomo, Yasuhiro Sugamata, Kunihiro Matsumoto
  • Patent number: 8101719
    Abstract: The present invention relates to humanized antibodies binding to CD47; diabodies binding to human CD47, characterized in that a disulfide bond exists between diabody-forming fragments; genes encoding any one of said antibodies; vectors containing said genes; host cells containing said vectors; processes for preparing antibodies comprising the step of culturing said host cells; and therapeutic agents for hematological disorders comprising said antibodies.
    Type: Grant
    Filed: November 11, 2004
    Date of Patent: January 24, 2012
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Yasufumi Kikuchi, Shinsuke Uno, Yasuka Kinoshita, Shigeyuki Iijima, Naoshi Fukushima, Masayuki Tsuchiya